• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.402-409
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• 2013

The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1283-1292
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• 1994

Ultra-fine $\beta$-SiC powders were fabricated by self-propagating high temperature synthesis process (SHS) using chemical furnace. The dependences of the C powders with different surface areas, the molar ratios of C/Si, the weight ratios of chemical fuel content, and pellet diameter-size on synthesis were investigated. Compositional and structural characterization of these powders was carried out by scanning electron micrograph and X-ray diffraction. The $\beta$-SiC powders which had C/Si mole ratio=1.05, 3 times chemical fuel contents, and pellet diameter=20 mm were optimum for synthesis efficiency. By optimizing process-variables, it is possible to fabricate $\beta$-SiC powders which have little secondary phases ($\alpha$-SiC).

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.413-418
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• 1995

The (B.Si)C composite was prepared form the mixture of metal boron, silicon, and carbon powders in Ar atmosphere by Self-propagating High-temperature Synthesis Chemical Furnace. The characterization of synthesized power and sintered body were investigated. The microstructure of sintered body suggested that SiC boundary was made between B4C grains. The most excellent mechanical properties, the relative density of 95% oftheoretical value, 3 point flexural strength of 360MPa, and fracture toughness of 3.6MN/m3/2 could be obtained in 80wt% B4C-20 wt% SiC composite were obtained.

• Korean Chemical Engineering Research
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• v.53 no.2
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• pp.247-252
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• 2015

ZSM-5 crystals grew on the surface of ${\alpha}$-SiC and ${\beta}$-SiC particles by hydrothermal synthesis method. SiC particles which were > $50{\mu}m$ of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on ${\beta}$-SiC at $900^{\circ}C$ in air, and it was controlled to grow ZSM-5 grew from the ${\beta}$-SiC surface with $150^{\circ}C$ synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of ${\beta}$-SiC. When the synthesis temperature was $200^{\circ}C$, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.871-876
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• 1996

It is believed that fly ash could be suitable for preparing the sialon by carbothermal reduction method because the total amount of SiO2 and Al2O3 is above 80% and the unburned residual carbon is above 5% within the fly ash. The effects of reaction temperature (1350, 1400, 145$0^{\circ}C$) reaction time (1, 5, 10 hours) and the amount of carbon additions (C/SiO2=2, 3, 4 mole) on the $\beta$-sialon synthesis were obserbed, It was conformed that $\beta$-sialon (Z=2.15~2.18) was formed as major phase under all of the synthesis conditions and small amount of Si2ON2 SiC, AlN and Si3N4 was formed depending on the synthesis conditions. FeSix intermetal-lic compound was formed above 140$0^{\circ}C$ reaction temperature due to the large amount of iron oxides within the raw fly ash.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.1-4
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• 1998

SiC whisker reinforced Al2O3-SiC composite was fabricated by reaction synthesis method whish is cost ef-fective and allows good dispersion of whiskers. Fracture strength at room temperature showed the highest value with 150$0^{\circ}C$ reaction temperature because a lot of SiC whiskers was formed. Fracture strength at 135$0^{\circ}C$ did not show big differences with reaction temperature due to agglomeration of whiskers and formation of sil-icon oxynitride during hot MO(modulus of rupture) test probably promoting grain boundary sliding.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1114-1118
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• 2000

Ti 및 C 입자로 이루어진 다공질 성형체에 용융 Si의 침윤 및 반응으로 새로운 Ti$_3$SiC$_2$합성공정이 개발되었다. 용융 Si 침윤에 의한 Ti$_3$SiC$_2$합성공정에서는 이제까지 연구된 합성방법 보다 넓은 조성 범위에서 Ti$_3$SiC$_2$의 합성이 이루어졌다. 용융 Si을 활성 매질로 사용한 Ti$_3$SiC$_2$의 합성에서는 성형체 조성, 원료 입자 크기 및 침윤되는 용융 Si의 양에 따라 합성되는 상 및 각 합성상의 양이 다르게 나타났다. Ti:Si:C=3:1:6 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$상이 합성되었으며, 일부 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$, TiC 및 SiC가 함께 합성되었다. 작은 Ti 입자로 이루어진 성형체를 사용하여 합성한 시편에서 Ti$_3$SiC$_2$상의 합성이 용이하게 이루어졌으며, 성형체 조성 및 침윤되는 Si의 양이 화학양론적으로 Ti$_3$SiC$_2$에 근접한 조성을 갖는 시편에서 Ti$_3$SiC$_2$를 높은 수율로 합성할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.515-520
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• 2020

The Ti₃SiC₂ MAX phase was synthesized by arc-melting process under three different processing times. We confirmed that the reaction between the TiC_X phase and Ti-Si liquid phase is important for the synthesis of the Ti₃SiC₂ MAX phase. Results suggest that the Ti₃SiC₂ MAX phase decomposed when the arc-melting time was greater than 80s. Herein, we aim to determine the detailed parameters for the reported arc-melting process, which can provide useful insights on the synthesis of the Ti₃SiC₂ MAX phase by arc-melting process. Furthermore, we compared the electrical characteristics and densities of the three samples.