• Title/Summary/Keyword: Switching stress

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Implementation of a ZVS Three-Level Converter with Series-Connected Transformers

  • Lin, Bor-Ren
    • Journal of Power Electronics
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    • v.13 no.2
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    • pp.177-185
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    • 2013
  • This paper studies a soft switching DC/DC converter to achieve zero voltage switching (ZVS) for all switches under a wide range of load condition and input voltage. Two three-level PWM circuits with the same power switches are adopted to reduce the voltage stress of MOSFETs at $V_{in}/2$ and achieve load current sharing. Thus, the current stress and power rating of power semiconductors at the secondary side are reduced. The series-connected transformers are adopted in each three-level circuit. Each transformer can be operated as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer from the input side to the output side. Therefore, no output inductor is needed at the secondary side. Two center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Due to the resonant behavior by the resonant inductance and resonant capacitance at the transition interval, all switches are turned on at ZVS. Experiments based on a 1kW prototype are provided to verify the performance of proposed converter.

A Novel Multi-Level Type Sustaining Driver for AC Plasma Display Panel (새로운 방식의 멀티레벨 AC PDP 구동장치)

  • Jung Woo-Chang;Kang Kyung-Woo;Yoo Jong-Gul;Ko Jong-Sun;Hong Soon-Chan
    • Proceedings of the KIPE Conference
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    • 2004.07a
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    • pp.425-429
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    • 2004
  • A new multi-level type energy recovery sustaining driver for AC PDP(Plasma Display Panel) is proposed in this paper. The multi-level driver has been developed to reduce the voltage stress on switching elements. Comparing the proposed driver with the conventional multi-level driver, 4 switching elements, 4 diodes, and two auxiliary capacitors are eliminated in the viewpoint of circuit structure. Moreover, the voltage stress on switching elements is more reduced and the sustain period is extended. To verify the validity of the proposed energy recovery circuit, computer simulations using PSpice program are carried out.

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Development of the Hybrid Fault Current Limiter (복합형 한류기 개발)

  • Park, K.B.;Lee, G.H.;Bang, S.H.;Choi, W.J.;Sim, J.W.;Sin, Y.S.;Kim, Y.G.;Hyun, O.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.125-125
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    • 2010
  • The Hybrid Fault current limit combined the semiconductor switching components, for example IGBT, with mechanical fast switch reduced mechanical and thermal stress on electrical machines, for example circuit breaker, transformer, and so on, in the electric network. We had focused on reducing the voltage stress of the semiconductor switching components by the mechanical fast switch. As a result, we could dramatically reduce amount of semiconductor switching components only using parallel arrangement of them, not series.

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Effect of Electric Fields on Crack Kinking in Ferroelectrics (전기장이 강유전체 내의 균열킹크에 미치는 영향)

  • Lee, Jong-Sik;Beom, Hyeon-Gyu
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.1206-1210
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    • 2003
  • Effect of transverse electric field on crack kinking in ferroelectric ceramics subjected to purely electric loading is investigated. It is shown that the shape and size of the domain switching zone depends strongly on the direction of the applied electric field as well as the ratio of the transverse electric field to the coercive electric field. Under small-scale conditions, mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectrics is also discussed.

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A Study on the Energy Recovery of AC PDP Driving Circuits (AC PDP 구동회로의 에너지 회생에 관한 연구)

  • Jung Woo-Chang;Kang Kyung-Woo;Yoo Jong-Gul;Hong Soon-Chan
    • Proceedings of the KIPE Conference
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    • 2003.11a
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    • pp.267-270
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    • 2003
  • In this paper, a new energy recovery circuit for AC PDP(Plasma Display Panel) is proposed to decrease a sustain voltage and voltage stress on switching elements. In the proposed circuit, two auxiliary capacitors are connected directly to the power source through switching elements and inductors when ground potential is supplied to the panel. Therefore, the voltage across auxiliary capacitors can be increased by turns over the half of the source voltage. Because the intrinsic capacitance of PDP is charged sufficiently from the auxiliary capacitors, the level of sustain voltage and the voltage stress on the switching devices are decreased. To verify the validity of the proposed energy recovery circuit, computer simulations using PSpice program are carried out.

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Effect of Transverse Electric Fields on Fracture Behavior of Ferroelectric Ceramics (횡전기장이 강유전체 세라믹의 파괴거동에 미치는 영향)

  • Lee Jong Sik;Beom Hyeon Gyu;Jeong Kyoung Moon
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.2
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    • pp.120-125
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    • 2005
  • Effect of transverse electric fields on fracture behavior in ferroelectric ceramics under purely electrical loading is investigated. It is shown that the shape and size of the domain switching zone depend strongly on the ratio of the transverse electric field to the coercive electric field as well as the direction of the applied electric field. Under small-scale conditions, the crack-tip mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectric ceramics is also discussed.

Domain Switching Toughening of Ferroelectric Ceramics Subjected to Electric Fields (전기장을 받는 강유전체 세라믹의 분역회전 인성화)

  • Jeong, Kyoung-Moon;Beom, Hyeon-Gyu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.4
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    • pp.577-584
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    • 2003
  • A crack with growth in ferroelectric ceramics under purely electric loading is analyzed. The crack tip stress intensity factor for the growing crack under small-scale conditions is evaluated by employing the model of nonlinear domain switching. The crack tip stress intensity factor increases or decreases with crack growth, depending on the electrical nonlinear behavior and the direction of an applied electric field. It is shown that the ferroelectric material can be either toughened or weakened as the crack grows. The steady state crack growth in ferroelectric ceramics is also discussed.

Dual Path Magnetic-Coupled AC-PDP Sustain Driver with Low Switching Loss

  • Lee Jun-Young
    • Journal of Power Electronics
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    • v.6 no.3
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    • pp.205-213
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    • 2006
  • A cost-effective magnetic-coupled AC-PDP sustain driver with low switching loss is proposed. The transformer reduces current stress in the energy recovery switches which affects circuit cost and reliability. The turns-ratio can be used to adjust the sustain pulse slopes which affect gas discharge uniformity. Dividing the recovery paths prevents abrupt changes in the output capacitance and thereby switching losses of the recovery switches is reduced. In addition, the proposed circuit has a more simple structure because it does not use the recovery path diodes which also afford a large recovery current. By reducing the current stress and device count in the energy recovery circuit, the proposed driver may have decreased circuit cost and improved circuit reliability.

Development of the Power Supply with Reduced Conduction Loss and Switching Stress on the Full-Bridge DC-DC Converter (풀브리지 DC-DC 컨버터의 도전손실과 스위칭 스트레스를 저감한 전원장치 개발)

  • Ra Byung-Hun;Song Dae-Hyun;Kim Kwang-Tae;Lee Hyun-Woo
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.608-611
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    • 2001
  • This paper is indicating the problems, which are the conduction loss on the high frequency transformer, the protection of rectification diode as the snubber loss and the stress of switching main devices, as be made high current and high speed in the phase-shift switching full-bridge DC-DC converter is used the power supply's main circuit of high capacity. In this paper, to improve those problems, it is proposed that is the resonant circuit auxiliary can be reduced conduction losses and stabilized output control. And, it is constructed prototype of the power supply as the result of computer simulations.

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A New Active Gate Drive Circuit for High Power IGBTs (대용량 IGBT를 위한 새로운 능동 게이트 구동회로)

  • 서범석;현동석
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.2
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    • pp.111-121
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    • 1999
  • This paper deals with an active gate drive (AGD) technolo밍T for high power IGBTs. It is based on an optimal c combination of several requirements necessmy for good switching performance under hard switching conditions, The s scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast driver requirements for high speed switching and low switching energy loss The gate drive can also effectively dampen oscillations during low cunent turnlongrightarrowon transient in the IGBT, This paper looks at the conflicting requirements of the c conventional gate dlive circuit design and the experimental results show that the proposed threelongleftarrowstage active gate dlive t technique can be an effective solution.

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