• 대한전자공학회논문지SD
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• 제38권2호
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• pp.137-144
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• 2001

본 논문은 디지털 순서회로 설계시 상태할당 알고리즘 개발에 관한 연구로, 동적 소비전력을 감소시키기 위하여 상태변수의 변화를 최소로 하는 코드를 할당하여 상태코드가 변화하는 스위칭횟수를 줄이도록 하였다. 상태를 할당하는데는 Markov의 확률함수를 이용하여 hamming거리가 최소가 되도록 상태 천이도에서 각 상태를 연결하는 edge에 weight를 정의한 다음, 가중치를 이용하여 각 상태들간의 연결성을 고려하여 인접한 상태들간에는 가능한 적은 비트 천이를 가지도륵 모든 상태를 반복적으로 찾아 계산하였다. 비트 천이의 정도를 나타내기 위하여 cost 함수로 계산한 결과 순서회로의 종류에 따라 Lakshmikant의 알고리즘보다 최고 57.42%를 감소시킬 수 있었다.

• Journal of Communications and Networks
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• 제7권3호
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• pp.377-384
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• 2005

The purpose of this research is to develop and evaluate a traffic engineering architecture that uses local state information. This architecture is applied to an Internet protocol radio access network (RAN) that uses multi-protocol label switching (MPLS) and differentiated services to support mobile hosts. We assume mobility support is provided by a protocol such as the hierarchical mobile Internet protocol. The traffic engineering architecture is router based-meaning that routers on the edges of the network make the decisions onto which paths to place admitted traffic. We propose an algorithm that supports the architecture and uses local network state in order to function. The goal of the architecture is to provide an inexpensive and fast method to reduce network congestion while increasing the quality of service (QoS) level when compared to traditional routing and traffic engineering techniques. We use a number of different mobility scenarios and a mix of different types of traffic to evaluate our architecture and algorithm. We use the network simulator ns-2 as the core of our simulation environment. Around this core we built a system of pre-simulation, during simulation, and post-processing software that enabled us to simulate our traffic engineering architecture with only very minimal changes to the core ns-2 software. Our simulation environment supports a number of different mobility scenarios and a mix of different types of traffic to evaluate our architecture and algorithm.

• 대한전자공학회논문지SD
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• 제41권10호
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• pp.9-16
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• 2004

유한상태기의 상태할당은 이로부터 구현되는 순차회로의 속도, 면적, 테스팅 및 소비전력에 큰 영향을 미친다. 본 논문에서는 상태변수 그룹들 사이에 상호 의존성(dependency)을 최소화하여 테스팅 및 전력소모를 개선하기 위한 m-블록 분할을 이용한 새로운 상태할당 기술을 소개한다. 제안된 알고리듬은 상태들을 그룹으로 나누어 상태변수의 상호의존성을 줄이고, 상태천이 확률에 의해 결정된 무게인자에 따라 상태 간 상태변수의 변화를 최소로하는 코드를 할당하여 상태 천이시 스위칭 횟수를 줄인다. 즉 피드백 순환의 길이와 수는 상태 변수들 간에 최소 전환 활동으로 감소됩니다 벤치마크 회로에 대한 실험결과는 테스팅 및 소비전력이 현저히 개선되었음을 확인하였다.

• Journal of Power Electronics
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• 제16권1호
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• pp.153-162
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• 2016

Given their structural arrangement, photovoltaic (PV) modules exhibit parasitic capacitance, which creates a path for high-frequency current during zero-state switching of the converter in transformerless systems. This current has to be limited to ensure safety and electromagnetic compatibility. Many solutions that can minimize or completely avoid this phenomenon, are available. However, most of these solutions are patented because they rely on specific and often complex converter topologies. This study aims to solve this problem by introducing a solution based on a classic converter topology with an appropriate modulation technique and passive filtering. A 5.5 kW single-phase residential PV system that consists of DC-DC boost stage and DC-AC H-bridge converter is considered. Control schemes for both converter stages are presented. An overview of existing modulation techniques for H-bridge converter is provided, and a modification of hybrid modulation is proposed. A system prototype is built for the experimental verification. As shown in the study, with simple filtering and proper selection of switching states, achieving low leakage current level is possible while maintaining high converter efficiency and required energy quality.

• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Journal of Power Electronics
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• 제19권1호
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• pp.158-167
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• 2019

This research comparatively studies three kinds of flux regulation methods, namely, stored capacitor discharge pulse (SCDP), constant current source pulse (CCSP), and quantitative flux regulation pulse (QFRP), which are used for hybrid permanent magnet (PM) axial field flux-switching memory machines (HPM-AFFSMMs). Through an analysis of the operation principle and the series hybrid PM flux regulation mechanism of the objective machine, the circuit topologies and flux regulation process of these flux regulation methods are addressed in detail. On the basis of a simulation, the flux regulation characteristics of the researched machine during the magnetization and demagnetization processes are comparatively evaluated. Then, machine performance, including back EMF, direct and quadrature axis inductances, and magnetization and demagnetization characteristics, is quantitatively investigated. Results show that the QFRP enables the HPM-AFFSMM to achieve a less harmonic component of back EMF by approximately 7.28% and 7.97% at the magnetization and demagnetization states, respectively, and a more complete magnetization process than the SCDP and CCSP.

• 전기전자학회논문지
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• 제26권4호
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• pp.633-638
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• 2022

최근 인간의 뇌를 모방한 스파이킹 뉴럴 네트워크(SNNs)의 뉴로모픽(Neuromorphic) 시스템이 주목을 받고 있다. 뉴로모픽 기술은 인지 응용과 처리 과정에서 속도가 빠르고 전력 소모가 적다는 장점이 있다. SNNs 기반의 저항성 랜덤 엑세스 메모리(RRAM) 은 병렬 연산을 위한 가장 효율적인 구조이며 스파이크 타이밍 종속 가소성(STDP)의 점진적인 스위칭 동작을 수행한다. 시냅스 소자 동작으로서의 RRAM은 저 전력 프로세싱과 다양한 메모리 상태를 표현한다. 하지만, RRAM 소자의 통합은 높은 스위칭 전압 및 전류를 유발하여 높은 전력 소비를 초래한다. RRAM의 동작 전압을 낮추기 위해서는 스위칭 레이어와 금속 전극의 신소재를 개발하는 것이 중요하다. 본 연구에서는 스위칭 전압을 낮추기 위해 전기적, 기계적 특성이 우수한 단일 벽 탄소나노튜브(SWCNTs)를 갖는 (Metal/Al₂O₃/HfO_x/SWCNTs/N+silicon, MOCS)라는 최적화된 새로운 구조를 제안하였다. 따라서 SWCNTs 기반 멤리스터의 점진적인 스위칭 동작 및 저 전력 I/V 곡선의 향상을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of Information Technology Applications and Management
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• 제21권1호
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• pp.177-184
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• 2014

This research analyzes the effects of factors on the demands for outbound to the countries such as Japan, China, the United States of America, Thailand, Philippines, Hong Kong, Singapore and Australia, the countries preferred by many Koreans. The factors for this research are (1) economic variables such as Korea Composite Stock Price Index (KOSPI), which could have influences on outbound tourism and exchange rate and (2) unpredictable events such as diseases, financial crisis and terrors. Regression analysis was used to identify relationship based on the monthly data from January 2001 to December 2010. The results of the analysis show that both exchange rate and KOSPI have impacts on the demands for outbound travel. In the case of travels to the United States of America and Philippines, Korean tourists usually have particular purposes such as studying, visiting relatives, playing golf or honeymoon, thus they are less influenced by the exchange rate. Moreover, Korean tourists tend not to visit particular locations for some time when shock reaction happens. As the demands for outbound travels are different from country to country accompanied by economic variables and shock variables, differentiated measure to should be considered to come close to the target numbers of tourists by switching as well as creating the demands. For further study we plan to build outbound tourism forecasting models using Artificial Neural Networks.

• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.799-806
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• 2016

We present a polarization-dependent prism array film for controlling the viewing angle distribution of liquid crystal (LC) display panels without loss of light efficiency. On a directional backlight unit, our polarization-dependent prism array film, made into a stacked bilayer with a well-aligned liquid crystalline reactive mesogen (RM) layer on the UV-imprinted prism structure, can continuously control the light refraction function of the prism array by electrically switching incident polarization states of a polarization-controlling layer prepared by a twisted nematic LC mode. The viewing angle control properties of the polarization-dependent prism array film are analyzed under different prism angle and refractive index conditions of the RM layer. A simple analytic model is also presented to describe the intermediate viewing angle distributions with continuously varying applied voltages and incident polarization states.