• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 전력전자학회논문지
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• 제4권4호
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• pp.384-394
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• 1999

This paper deals with a fixed frequency full-bridge inverter type DC-DC high-power converter with high frequency high voltage(HFHV) transformer-coupled stage, which operates under quasi-resonant ZVS transition priciple in spite of a wide PWM-based voltage regulation processing and largely-changed load conditions. This multi-resonant(MR) converter topology is composed of a series capacitor-connected parallel resonant tank which makes the most of parasitic circuit reactive components of HFHV transformer and two additional quasi-resonant pole circuits incorporated into the bridge legs. The soft-switching operation and practical efficacy of this new converter circuit using the latest IGBTs are actually ascertained through 50kV trially-produced converter system operating using 20kHz/30kHz high voltage(HV) transformers which is applied for driving the diagnostic HV X-ray tube load in medical equipments. It is proved from a practical point of view that the switching losses of IGBTs and their electrical dynamic stresses relating to EMI noise can be considerably reduced under a high frequency(HF) switching-based phase-shift PWM control process for a load setting requirements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 대한의용생체공학회:의공학회지
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• 제29권4호
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• pp.272-277
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• 2008

Functional MRI technique was used in this study for examining the language switching mechanisms between the first language (L1) and the second language (L2). Language switching mechanism is regarded as a complex task that involves an interaction between L1 and L2. The aim of study is to find out the brain activation patterns during the phonological process of reading real English words and English words written in Korean characters in a bilingual person. Korean-English bilingual subjects were examined while they covertly read four types of words native Korean words, Korean words of a foreign origin, English words written in Korean characters, and English words. The fMRI results reveal that the left hemispheric language-related regions at the brain, such as the left inferior frontal, superior temporal, and parietal cortices, have a greater response to the presentation of English words written in Korean characters than for the other types of words, in addition, a slight difference was observed in the occipital-temporal lobe. These results suggest that a change in the brain circuitry underlying the relational processes of language switching is mainly associated with general executive processing system in the left prefrontal cortex rather than with a similarity-based processing system in the occipital-temporal lobes.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.471-476
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• 2015

This paper describes a CMOS hysteretic DC-DC buck converter with a constant switching frequency for mobile applications. The inherent problems of a large output ripple voltage that the conventional hysteretic DC-DC buck converters has faced have been resolved by using the proposed DC-DC buck converter which employed a ramp generator circuit to be able to increase a switching frequency. The proposed architecture enables the settling response time of charge pump circuit within the converter to become less than 6us suitable for mobile applications. The proposed DC-DC buck converter was implemented by using 0.35 um BCDMOS process and die size was $1.37mm{\times}1.37mm$. The measurement results showed that the proposed circuit received the input of 3.7 V and generated output of 1.2 V with the output ripple voltages less than 20 mV under load currents of 100~400 mA at the fixed switching frequency of 2 MHz. The maximum efficiency of the proposed hysteretic buck converter was measured to be around 93%.

• 한국세라믹학회지
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• 제47권4호
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• 품질경영학회지
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• 제44권4호
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• pp.921-934
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• 2016

Purpose: The purpose of this study was to propose useful suggestions by explore the effects of the Mobile Telecommunication service quality on customer satisfaction and Customer Loyalty (Focus on Moderation effect of switching barrier) in Korea Mobile Telecommunication industry. Methods: After reviewing the literature, the structural eqation modeling(SEM) conducted by LISREL 8.53 test the research model. The data was collected from subscriber of mobile telecommunication service by the questionare in Korea. Results: The results of SEM show that Mobile Telecommunication Service Quality have a positive effect on customer satisfaction, and customer satisfaction also have a positive effect on customer loyalty. And switching barrier have a moderation effect between customer satisfaction and customer loyalty. Conclusion: Mobile Telecommunication Service Quality is highly related to Customer Satisfation and Customer Loyalty, so Mobile Telecomunication Company should improve Service Quality especially price-related service quality and process/ human- related service quality. And the company need to get higher the positive Switching Barriers in order to improve Customer Loyalty.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권2호
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• pp.628-649
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• 2017

Security and resource-saving are both demands of the fifth generation (5G) wireless networks. In this paper, we study the secrecy spectrum efficiency (SSE) and secrecy energy efficiency (SEE) of a K-tier massive multiple-input multiple-output (MIMO) enabled heterogeneous cellular network (HetNet), in which artificial noise (AN) are employed for secrecy enhancement. Assuming (i) independent Poisson point process model for the locations of base stations (BSs) of each tier as well as that of eavesdroppers, (ii) zero-forcing precoding at the macrocell BSs (MBSs), and (iii) maximum average received power-based cell selection, the tractable lower bound expressions for SSE and SEE of massive MIMO enabled HetNets are derived. Then, the influences on secrecy oriented spectrum and energy efficiency performance caused by the power allocation for AN, transmit antenna number, number of users served by each MBS, and eavesdropper density are analyzed respectively. Moreover, the analysis accuracy is verified by Monte Carlo simulations.