• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• 한국전산유체공학회:학술대회논문집
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• 2005.10a
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• pp.311-317
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• 2005

It has been the most progressive interruption technique to use the ablation gas from the surface of PTFE nozzle driven by arc plasma during switching process in $SF_6$ gas circuit breakers. This advanced interruption technique can reduce the required mechanical energy to compress and blow the gas for extinguishing the arc plasma between the electrodes due to using the ablation effect instead. In order to consider the phenomena during calculation of switching process, it is required to confirm the principles of ablation from PTFE nozzle as well as of arc plasma during switching process. In this study, we have calculated the switching process considered the ablation of PTFE nozzle driven by arc plasma using multidisciplinary simulation technique and compared the results with the data without the ablation effect. More $50\%$ difference of pressure rise inside expansion chamber has been found from the results and it should be indispensable for this type of computational work to consider and include the ablation effect of PTFE nozzle. Further study on turbulence and radiation will be followed.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.5-6
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• 2000

Fringe-field switching (FFS) technology exhibiting a high image quality has been developed. In this paper, one pixel concept, manufacturing process, materials, and electro-optic characteristics of FFS mode comparing with conventional in-plane switching mode, and its possible application to reflective type will be discussed.

• Korean Management Science Review
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• v.10 no.1
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• pp.107-125
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• 1993

Modern telecommunication switching systems are SPC(Stored Program Control) machines handling voice, data and other kinds of traffic, in an environment which tends to be fully digital switching and transmission. The throughput of such systems is determined by the real time capacity of its centralized or distributed control processors and by the traffic capacity of the switching network. Designers must verify the traffic and call processing capacity of the switching system and check its performance under traffic load before it is put into service. Verification of traffic and call processing capacity of switching systems is one of the problems treated by teletraffic studies ; teletraffic studies are based on stochastic process, queueing theory, simulations and other quantitative methods of decision making. This study suggests the general methodology to evaluate the throughput and performance of the ISDN switching system. TDX-10 ISDN switching system are employed to give illustrative examples of the methodologies discussed in this study.

• Journal of Korean Institute of Industrial Engineers
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• v.13 no.2
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• pp.17-34
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• 1987

Modern telecommunication switching systems are SPC (Stored Program Control) machines handling voice, data and other kinds of traffic, in an environment which tends to be fully digital switching and transmission. The throughput of such systems is determined by the real time capacity of its centralized or distributed control processors and by the traffic capacity of the switching network. Designers must verify the traffic and call processing capacity of the switching system and check its performance under traffic load before it is put into service. Verification of traffic and call processing capacity of switching systems is one of the problems treated by teletraffic studies; teletraffic studies are based on stochastic process, queueing theory, simulations and other quantitative methods of decision making. This paper reviews the general methodologies to evaluate the throughput and performance of the digital switching system. TDX-10, which is a fully digital switching system under development in ETRI, is employed to give illustrative examples of the methodologies discussed in this paper.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.21-26
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• 2018

In this paper, the switching characteristics of the active clamp type flyback converter, which is deemed suitable for the miniaturization of the external power supply for home appliance, were analyzed and the process of reducing the switching loss was explained. The active clamp type flyback converter operating in the DCM has confirmed that the surge voltage of the main switch does not occur and the turn-off / on loss of the switch do not occur in principle. Also, in the case of the switch for synchronous rectifier, it was showed that the switch current showed half-wave rectified sinusoidal characteristic, and the switching loss was reduced. The switching characteristics of the experimental results gathered from 120 W class prototype were compared with the theoretical waveform in the steady-state and it was confirmed that the power conversion efficiency of the active clamp type flyback converter was maintained high due to the reduction of the switching loss.

• Journal of Information Technology Applications and Management
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• v.17 no.3
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• pp.121-134
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• 2010

Past studies in e-commerce loyalty were mostly focused on the effects of customer satisfaction and trust on loyalty toward online vendors. Few studies investigated the impacts of switching barriers, whilst they are widely proven to affect customer loyalty in offline commerce. Even in a handful of studies that did deal with switching barriers, their treatment of the subject remained at best superficial. This may have to do with the fact that switching costs in e-commerce could be comparatively negligible, as switching to another online vendor often involves one simple mouse click. In this study, we investigated the impact of switching barriers on loyalty under the e-commerce context. Furthermore, the extent of switching barriers which could be affected by those positive factors (most constructs were adopted from IDT) was also examined. The statistical testing results revealed that combined model which includes both the positive factors and the switching barriers explains the loyalty formation process more strongly ($R^2$ = 0.543) than each separated models ($R^2$ = 0.468 for positive factor only model, and $R^2$ = 0.365 for switching barrier only model). While only the two switching barriers such as convenience and emotional were shown to be statistically significant, we found that trust strongly influences customer's emotional barrier, let alone direct impact on loyalty, which thereby influences loyalty. The results offer insights for better understanding switching barriers in e-commerce related applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Management Science and Financial Engineering
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• v.19 no.1
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• pp.49-52
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• 2013

In this paper we provide a valuation formula for a variance swap with regime switching. A variance swap is a forward contract on variance, the square of realized volatility of the underlying asset. We assume that the volatility of underlying asset is governed by Markov regime-switching process with finite states. We find that the proposed model can provide ease of calculation and be superior to the models currently available.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.