• Journal of Power Electronics
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• v.6 no.3
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• pp.205-213
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• 2006

A cost-effective magnetic-coupled AC-PDP sustain driver with low switching loss is proposed. The transformer reduces current stress in the energy recovery switches which affects circuit cost and reliability. The turns-ratio can be used to adjust the sustain pulse slopes which affect gas discharge uniformity. Dividing the recovery paths prevents abrupt changes in the output capacitance and thereby switching losses of the recovery switches is reduced. In addition, the proposed circuit has a more simple structure because it does not use the recovery path diodes which also afford a large recovery current. By reducing the current stress and device count in the energy recovery circuit, the proposed driver may have decreased circuit cost and improved circuit reliability.

• Journal of Power Electronics
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• v.16 no.1
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• pp.121-132
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• 2016

In this paper, high-efficiency design methodology of a zero-voltage-switching full-bridge (ZVS-FB) pulse width modulation (PWM) converter for server-computer power supply is discussed based on self-driven synchronous rectifier (SR) performance. The design approach focuses on rectifier conduction loss on the secondary side because of high output current application. Various-number parallel-connected SRs are evaluated to reduce high conduction loss. For this approach, the reliability of gate control signals produced from a self-driver is analyzed in detail to determine whether the converter achieves high efficiency. A laboratory prototype that operates at 80 kHz and rated 1 kW/12 V is built for various-number parallel combination of SRs to verify the proposed theoretical analysis and evaluations. Measurement results show that the best efficiency of the converter is 95.16%.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1355-1357
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• 2005

This paper discusses Gate-driver circuit for improved switching characteristics. This resonant gate-driver recycles the energy stored in the gate capacitance to reduce the turn-off switching loss associated with a conventional gate-driver. Reducing the loss reduces the power consumption and hence the subsequent power dissipation in the resonant gate-driver. The design considerations of implementing a practical MOSFET gate-driver using this topology are discussed.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1428-1431
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• 2005

This paper presents an improved ZVT(Zero Voltage Transition) DC/DC Boost Converter using Active Snubber. The Conventional ZVT PWM Boost Converter is improved to minimize the switching loss of auxiliary switch using the minimum number of the components. In this thesis, advantage and disadvantages of Conventional ZVT Converter using a auxiliary resonant circuit is discussed. Then Improved ZVT soft switching converter will be discussed. In comparison a previous ZVT converter, the proposed converter reduces turn-off switching loss of the auxiliary switch. Therefore, the proposed converter has a high efficiency by active snubber. To show the superiority of this converter is verified through the experiment with a 640W, 100kHz prototype converter.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.95-100
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• 2022

In this paper, a power loss analysis technique of a high-frequency transformer of a bidirectional DAB (Dual Active Bridge) converter is reported. To miniaturize the transformer of the dual active bridge converter, a resonant inductor was designed with an air gap included low-coupled rate state core to combine leakage inductor with the resonant inductor which is required for soft-switching. In this paper, leakage inductance and magnetizing inductance, core material, type of winding and winding method are included in the dual active bridge transformer loss analysis process to enable optimal design at the initial design stage. Transformer loss analysis for dual active bridge with a switching frequency of 200 kHz and maximum output of 5 kW was executed, and elements necessary for design based on the number of turns on the primary side were graphed while maintaining the transformer turns ratio and window area. In particular, it was possible to determine the optimal number of turns and thickness of the transformer, and ultimately, the total loss of the transformer could be estimated.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.12
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• pp.622-628
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• 2005

This paper is given a full detail of mathematical analyses of input current and output voltage for a novel active type power factor correction (PFC) converter. These are compared with harmonics components of input current for a conventional PFC converter. The proposed PFC converter is constructed in using a new loss-less snubber circuit to achieve a soft switching of control device. Also the proposed converter for discontinuous conduction mode (DCM) eliminates the complicated circuit control requirement and reduces the size of components. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of ac input voltage under the constant duty cycle switching. Therefore, input power factor is nearly unity and the control method is simple. Particularly, the stored energy of loss-less snubber capacitor is recovered with input side and increases input current from resonant operation. The result is that input power factor of the proposed converter is higher than that of conventional PFC converter. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• Journal of Power Electronics
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• v.16 no.1
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• pp.84-92
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• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

• Journal of Aerospace System Engineering
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• v.15 no.1
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• pp.32-39
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• 2021

Electric propulsion aircraft are being actively researched in the aviation field in recent years to solve environmental and noise problems caused by existing gas turbine engine. In particular, research on a thrust motor as a core component of an electric power propulsion system and an inverter for driving it is actively being conducted. In this paper, a motor with high specific power is selected to determine characteristics of aircraft that are sensitive to weight and volume. Power loss of the inverter is then simulated. In the simulation, the selected motor and power device were modeled using PSIM, a power electronics analysis tool. Inverter power loss according to switching frequency was then analyzed.

• Journal of Power Electronics
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• v.18 no.3
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• pp.702-713
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• 2018

Power loss reduction and total harmonic distortion(THD) minimization are two important goals of improving three-level inverters. In this paper, an optimized pulse width modulation (PWM) strategy that can reduce switching losses and balance the neutral point with an optional THD of three-level neutral-point-clamped inverters is proposed. An analysis of the two-level discontinuous PWM (DPWM) strategy indicates that the optimal goal of the proposed PWM strategy is to reduce switching losses to a minimum without increasing the THD compared to that of traditional SVPWMs. Thus, the analysis of the two-level DPWM strategy is introduced. Through the rational allocation of the zero vector, only two-phase switching devices are active in each sector, and their switching losses can be reduced by one-third compared with those of traditional PWM strategies. A detailed analysis of the impact of small vectors, which correspond to different zero vectors, on the neutral-point potential is conducted, and a hysteresis control method is proposed to balance the neutral point. This method is simple, does not judge the direction of midpoint currents, and can adjust the switching times of devices and the fluctuation of the neutral-point potential by changing the hysteresis loop width. Simulation and experimental results prove the effectiveness and feasibility of the proposed strategy.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1471-1481
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• 2014

This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for high-level MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.