• Title/Summary/Keyword: Switching devices

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High Power Buck-boost DC-DC Converter of Soft Switching for Photovoltaic Power Generation (태양광 발전을 위한 대용량 소프트 스위칭 승강압 DC-DC 컨버터)

  • 김영철;김재준;이종근;전중함;곽동걸;이현우
    • Proceedings of the KIPE Conference
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    • 1996.06a
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    • pp.117-120
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    • 1996
  • Power conversion system must be increased switching frequency in order to achieve a small size, a light weight and a low noise. However, the switches of converter are subjected to high switching power losses and switching stresses. As a result of those, the power system brings on a low efficiency. In this paper, the authors propose a DC-DC boost converter of high power by partial resonant switch method (PRSM). The switching devices in a proposed circuit are operated with soft switching and the control technique of those is simplified for switch to drive in constant duty cycle. The partial resonant circuit makes use of a inductor using step up and a condenser of loss-less snubber. Also the circuit has a merit which is taken to increase of efficiency, as it makes to a regeneration at input source of accumulated energy in snubber condenser without loss of snubber in conventional circuit. The result is that the switching loss is very low and the efficiency of system is high. The proposed converter is deemed the most suitable for high power applications where the power switching devices are used.

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Soft Switching Forward Converter Using Non-Dissipative Snubber (무손실 스너버 적용 소프트 스위칭 Forward 컨버터)

  • 김은수;김태진;최해영;조기연;김윤호
    • Proceedings of the KIPE Conference
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    • 1997.07a
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    • pp.256-260
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    • 1997
  • To achieve high efficiency in high power and high frequency applications, reduction of switching losses and noise is very important. In this paper, an improved soft switching forward converter is proposed. The proposed converter is constructed by using non-dissipative snubbers in parallel with the main switch and output diode of the conventional forward converter. Due to the use of the non-dissipative snubbers in the primary and secondary, the proposed converter achieves zero-voltage and zero-current switching for all switching devices without switching losses and output diode recovery losses. The complete operating principles, theoritical analysis, experimental results will be presented.

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A Generalized Loss Analysis Algorithm of Power Semiconductor Devices in Multilevel NPC Inverters

  • Alemi, Payam;Lee, Dong-Choon
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2168-2180
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    • 2014
  • In this paper, a generalized power loss algorithm for multilevel neutral-point clamped (NPC) PWM inverters is presented, which is applicable to any level number of multilevel inverters. In the case of three-level inverters, the conduction loss depends on the MI (modulation index) and the PF (power factor), and the switching loss depends on a switching frequency, turn-on and turn-off energy. However, in the higher level of inverters than the three-level, the loss of semiconductor devices cannot be analyzed by conventional methods. The modulation depth should be considered in addition, to find the different conducting devices depending on the MI. In a case study, the power loss analysis for the three- and five-level NPC inverters has been performed with the proposed algorithm. The validity of the proposed algorithm is verified by simulation for the three-and five-level NPC inverters and experiment for three-level NPC inverter.

High Power Circuit Analysis with the Simulation Technique using Physical Models of Power Devices (물리적인 전력소자 모텔을 이용한 대용량 인버터 시뮬레이션 기술)

  • Yoon Jae Hak;Schroder D.
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.330-333
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    • 2002
  • The design of high power electronic circuits and the verification of the design by practical experiments are time and cost consuming. Recently power circuit simulation technique is developing to do it easily. However, most of the simulation has used the ideal switch model consists of passive component that can not describe the physical characteristics of semiconductor devices and cannot describe the switching transient state. For the design of such power electronic circuits by the simulation, the switching transients are very important. Therefore the simulation models must describe the switching transient and the stationary behavior as precisely as possible on the hand and as fast as possible the other hand. This paper introduces the application of the physical models of power devices that are developed by TUM(Technical University of Munich, Germany) for the power electronic circuit analysis.

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Topology of Single-Phase PFC Rectifier Circuit with Sinusoidal of Input Current (입력전류의 정현화에 의한 단상PFC정류회로의 토폴로지)

  • Lee, S.H.;Kim, Y.M.;Kwon, S.K.;Suh, K.Y.
    • Proceedings of the KIEE Conference
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    • 2002.11c
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    • pp.290-293
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    • 2002
  • For small capacity rectifier circuits such as these for consumer electronics and appliances, capacitor input type rectifier circuits are generally used. Consequently, various harmonics generated within the power system become a serious problem. Various studies of this effect have been presented previously. However, most of these employ switching devices, such as FETs and the like. The absence of switching devices makes systems more tolerant to over-load, and brings low radio noise benefits. We propose a power factor connection scheme using a LC resonant in commercial frequency without switching devices. In this method, It makes a sinusoidal wave by widening conduction period using the current resonance in commercial frequency, Hence, the harmonic characteristics can be significantly improved, where the lower order harmonics, such as the fifth and seventh orders are much reduced. The result are confirmed by the theoretical and experimental implementations.

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The Soft Recovery Pulse Width Modulation Quasi Resonant Converter with Revised Folding Snubber Network (개선된 폴딩 스너버 망을 이용하여 소프트하게 역 복귀하는 의사 공진형 펄스 폭 컨버터)

  • Chung, Jin-Kuk
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.47 no.1
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    • pp.62-66
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    • 2010
  • A new soft recovery pulse width modulation quasi resonant converter composed only passive devices snubber network is proposed. This passive devices snubber network is revised form of folding snubber network that suppressed the reverse recovery current of main rectify diode in PWM converter. It also makes the MOSFET switching devices operate in soft state. The efficient of the proposed converter is almost same level to that of the converter of active snubber type. The overall circuit is simple and easy to realized. Therefore, it is suitable to apply to middle range output power source.

Topology of input current waveform improvement type single-phase rectifier (입력전류 파형 개선형 단상 정류기의 토폴로지)

  • 이상현;박진민;문상필;서기영
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2003.11a
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    • pp.403-406
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    • 2003
  • For small capacity rectifier circuits such as these for consumer electronics and appliances, capacitor input type rectifier circuits are generally used. Consequently, various harmonics generated within the power system become a serious problem. Various studies of this effect have been presented previously. However, most of these employ switching devices, such as FET and the like. The absence of switching devices mattes systems more tolerant to over-load and brings low radio noise benefits. We propose a power factor correction scheme using a LC resonant in commercial frequency without switching devices. In this method It makes a sinusoidal wave by widening conduction period using the current resonance in commercial frequency, Hence, the harmonic characteristics can be significantly improved, where the lower order harmonics, such as the fifth and seventh orders are much reduced The result are confirmed by the theoretical and experimental implementations.

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Design of 80 V Grade Low-power Semiconductor Device (80 V급 저전력 반도체 소자의 관한 연구)

  • Sim, Gwan Pil;Ann, Byoung Sup;Kang, Ye Hwan;Hong, Young Sung;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.3
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    • pp.190-193
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    • 2013
  • Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

Analysis, Design, and Implementation of a Zero-Voltage-Transition Interleaved Boost Converter

  • Ting, Naim Suleyman;Sahin, Yakup;Aksoy, Ismail
    • Journal of Power Electronics
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    • v.17 no.1
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    • pp.41-55
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    • 2017
  • This study proposes a novel zero voltage transition (ZVT) pulse width modulation (PWM) DC-DC interleaved boost converter with an active snubber cell. All the semiconductor devices in the converter turn on and off with soft switching to reduce the switching power losses and improve the overall efficiency. Through the interleaved approach, the current stresses of the main devices and the ripple of the output voltage and input current are reduced. The main switches turn on with ZVT and turn off with zero voltage switching (ZVS). The auxiliary switch turns on with zero current switching (ZCS) and turns off with ZVS. In addition, the snubber cell does not create additional current or voltage stress on the main switches and main diodes. The proposed converter can smoothly achieve soft switching characteristics even under light load conditions. The theoretical analysis and operating stages of the proposed converter are made for the D > 50% and D < 50% modes. Finally, a prototype of the proposed converter is implemented, and the experimental results are given in detail for 500 W and 50 kHz. The overall efficiency of the proposed converter reached 95.5% at nominal output power.