• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.201-205
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. And the dendrimer containing 48 pyridinepropanol functional end group, which could form a complex structure with metal ions was synthesized. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area($\pi$-A) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. The samples for electrical measurement were fabricated to two types which were pure dendrimer with pyridinepropanol group and its complexes with $Pt^4+$ ions by LB method. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of Metal/Dendrimer LB films/Metal(MIM) structure. And we have investigated different results in the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure dendrimer with pyridinevopanol group and its complex with $Pt^4+$ ions. In conclusion, it is demonstrated that the metal ion around dendrimer with pyri야nepropanol group can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties. This results suggest that the dendrimers with azobenzene group and pvridinedropanol group can be applied to high efficient nano-device of molecular level.

• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1090-1100
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• 2017

This paper presents the comparison of starting current characteristics of a three-phase induction motor fed by two types of soft starters. The first soft starter under investigation is a conventional AC voltage controller on the basis of a phase-control technique. The other is the proposed asynchronous PWM AC chopper which is developed from the conventional synchronous PWM AC chopper. In this paper, the proposed asynchronous PWM AC chopper control scheme is developed by generating only two asynchronous PWM signals for a three-phase main power circuit (6 switching devices) from a single voltage control signal which is compared with a single sawtooth carrier signal. By this approach, the PWM signals are independent and easy to implement since the PWM signals do not need to be synchronized with a three-phase voltage source. Details of both soft starters are discussed. The experimental and simulation results of the starting currents are shown. It is found that the asynchronous PWM AC chopper efficiently works as a suitable soft starter for the three-phase induction motor due to that the starting currents are reduced and are sinusoidal with less harmonic contents, when being compared with the starting current waveforms using the conventional phase-control starting technique. Also the proposed soft starter offers low starting electromagnetic torque pulsation.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.400-409
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• 2001

A new phase-shifted parallel-input/series-output(PISO) dual converter for tush-power step-up applications has been proposed. Since the proposed converter shows a low switch turn-off voltage stress, switching devices with low conduction loss can be employed in order to improve the power conversion efficiency. Moreover, it features a low output capacitor root-mean-square(RMS) current stress, low input current and output voltage ripple contents, and fast control-to-output dynamics compared to its PWM counterpart. In this paper, the operation of the proposed converter is analyzed in detail and its mathematical models and steady-state solutions are presented. A comparative analysis with the conventional PWM PISO dual converter is also provided. To confirm the operation, features, and validity of the Proposed converter, experimental results from an 800W, 24-350Vdc prototype are presented.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• The KIPS Transactions:PartA
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• v.8A no.4
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• pp.311-318
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• 2001

In recent years, users\` demands for multimedia service are increasing because of a diffusion of internet. Server systems, however, offer inefficient multimedia data service to users. Multimedia applications often transfer the same data between shared devices at very high rates, and therefore require an efficient I/O subsystem. Data copying and context switching have long been identified as sources of I/O inefficiency. Therefore we propose the new Multimedia Stream System Call (MSSC) mechanism, which is inserted into a Linux kernel: The MSSC mechanism operates in kernel domain with RTP (Real-time Transport Protocol). We present measurements indicating that use of our techniques resulted in a 12.5%∼14% gain in throughput as compared with a conventional Linux system.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.201-201
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. And the dendrimer containing 48 pyridinepropanol functional end group, which could form a complex structure with metal ions was synthesized. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area($\pi$-A) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. The samples for electrical measurement were fabricated to two types which were pure dendrimer with pyridinepropanol group and its complexes with $Pt^4+$ ions by LB method. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of Metal/Dendrimer LB films/Metal(MIM) structure. And we have investigated different results in the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure dendrimer with pyridinevopanol group and its complex with $Pt^4+$ ions. In conclusion, it is demonstrated that the metal ion around dendrimer with pyri야nepropanol group can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties. This results suggest that the dendrimers with azobenzene group and pvridinedropanol group can be applied to high efficient nano-device of molecular level.

• Journal of the Korean Applied Science and Technology
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• v.13 no.1
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• pp.75-85
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• 1996

The absorption spectra of synthesis of long chain fatty acid containing azobenzene start from p-(p'-hydroxy phenyl azo)-benzoic acid was investigated by ultraviolet spectrophotometery in chloroform solvent at the various temperature. In addition, The pressure-area of the water-air interface was obtained and the LB film was fabricated onto a quartz slide and quartz crystal by conventional Langmuir-Blodgett(LB) method. The UV absorption spectra of Langmuir-Blodgett(LB) film on quartz slide and spectrum of monolayer formed on quartz crystal have been measured. Long chain fatty acid containing azobenzene are induced phtoisomerization by the application of u. v. and visible light irradiation alternatively the reversibility of phtoisomerization was more clear difference when the number of $C_{n}$ increased but, not so good at $C_{14}-azo$. At the pressure-area isotherms, the value of surface pressure increment were decreased when the number of $C_{n}$ increased. A surface pressure of 20mN/m was obtained as a proper one for a film deposition. The photoisomerization at LB films were induced by application of UV and visible light irradiation alternatively. So the LB film of long chain fatty acid containing azobenzene has possibility to being applied to functional molecular devices such as photomemory and light switching.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.983-988
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• 2011

Failure analyses of the screws in spinal fixation devices were carried out. The fractured screws were retrieved from a patient who had spinal surgery in the thoracic vertebrae from number 10 to 15. The failure occurred one month after the removal of the braces. Microstructures and fracture surfaces were examined by optical and scanning electron microscopy. The microstructures of the screws corresponded to annealed Ti-6Al-4V bar. However, in the vicinity of the screw surface, there was an insufficient number of fine precipitates. Fracture surfaces showed typical fatigue failure modes. Regarding the fact that no machining defects were detected, fatigue crack initiation might have been caused by the lack of precipitates near the screw surfaces. Only the fourth of five fixed screws was severely stress-concentrated by the action of the spinal bones, while the stress of the 4th screw was decreased to half of its acceptable level when the screw was supplemented by one more, which might have been fixed in the 6th vertebra under the 5th position by the switching of its position. The stress simulation was conducted by ANSYS with 3D CAD of PRO/E in order to understand the stress concentration behavior and to provide an effective spinal surgery guide.