• Title/Summary/Keyword: Switching Behavior

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A Study on PFC Buck-Boost AC-DC Converter of Soft Switching (소프트 스위칭형 PFC 벅-부스트 AC-DC 컨버터에 관한 연구)

  • Kwak, Dong-Kurl
    • The Transactions of the Korean Institute of Power Electronics
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    • v.12 no.6
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    • pp.465-471
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    • 2007
  • The system efficiency of the proposed Buck-Boost AC-DC converter is increased by soft switching method. The converter includes to merit of power factor correction (PFC) from sinusoidal control of input current. The switching behavior of control switches operates with soft switching by partial resonance, and then the proposed converter has high system efficiency with decrement of switching power loss. The input current waveform in proposed converter is got to be a sinusoidal form of discontinuous quasi-pulse row in proportion to magnitude of AC input voltage under the constant duty cycle switching. Therefore, the input power factor is nearly unity. The output voltage of the converter is regulated by PWM control technique. The discontinuous mode action of current flowing into inductor makes to simplify control method and control components. The proposed PFC Buck-Boost converter is analyzed to compare with the conventional PFC Buck-Boost converter. Some computer simulative results and experimental results confirm to the validity of the analytical results.

Three-dimensional finite element analysis of platform switched implant

  • Moon, Se-Young;Lim, Young-Jun;Kim, Myung-Joo;Kwon, Ho-Beom
    • The Journal of Advanced Prosthodontics
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    • v.9 no.1
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    • pp.31-37
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    • 2017
  • PURPOSE. The purpose of this study was to analyze the influence of the platform switching concept on an implant system and peri-implant bone using three-dimensional finite element analysis. MATERIALS AND METHODS. Two three-dimensional finite element models for wide platform and platform switching were created. In the wide platform model, a wide platform abutment was connected to a wide platform implant. In the platform switching model, the wide platform abutment of the wide platform model was replaced by a regular platform abutment. A contact condition was set between the implant components. A vertical load of 300 N was applied to the crown. The maximum von Mises stress values and displacements of the two models were compared to analyze the biomechanical behavior of the models. RESULTS. In the two models, the stress was mainly concentrated at the bottom of the abutment and the top surface of the implant in both models. However, the von Mises stress values were much higher in the platform switching model in most of the components, except for the bone. The highest von Mises values and stress distribution pattern of the bone were similar in the two models. The components of the platform switching model showed greater displacement than those of the wide platform model. CONCLUSION. Due to the stress concentration generated in the implant and the prosthodontic components of the platform switched implant, the mechanical complications might occur when platform switching concept is used.

Examining the Smartwork Use Resistance and Non-Class-Related Behavior of Attendees in University Smartwork Class: A Motivation-Threat-Ability Framework Perspective (대학 스마트워크 수업 중 스마트워크 이용저항과 수업 외적인 행동 고찰: 동기-위협-능력 프레임워크 관점)

  • Lee, Jong Man
    • The Journal of the Korea Contents Association
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    • v.16 no.8
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    • pp.39-47
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    • 2016
  • The purpose of this study is to investigate the smartwork use resistance and Non-Class-Related Behavior of attendees in university smartwork class with the perspective of Motivation-Threat-Ability. To do this, this study built a research model and examined how smartwork switching cost, threat and self-efficacy affect Non-Class-Related Behavior through smartwork use resistance. We also examined the relationship between self-efficacy and Non-Class-Related Behavior. The survey method was used for this paper, and data from a total of 80 university students were used for the analysis. And structural equation model was used to analyze the data. The results of this empirical study is summarized as followings. First, switching cost and threat have direct effects on the use resistance of smartwork services. Second, smartwork use resistance has a negative effect on Non-Class-Related Behavior but self-efficacy has a positive effect on it. Further, it will provide meaning suggestion point of the importance of use resistance motivations in establishing the use policy of smartwork services.

Implementation of a ZVS Three-Level Converter with Series-Connected Transformers

  • Lin, Bor-Ren
    • Journal of Power Electronics
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    • v.13 no.2
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    • pp.177-185
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    • 2013
  • This paper studies a soft switching DC/DC converter to achieve zero voltage switching (ZVS) for all switches under a wide range of load condition and input voltage. Two three-level PWM circuits with the same power switches are adopted to reduce the voltage stress of MOSFETs at $V_{in}/2$ and achieve load current sharing. Thus, the current stress and power rating of power semiconductors at the secondary side are reduced. The series-connected transformers are adopted in each three-level circuit. Each transformer can be operated as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer from the input side to the output side. Therefore, no output inductor is needed at the secondary side. Two center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Due to the resonant behavior by the resonant inductance and resonant capacitance at the transition interval, all switches are turned on at ZVS. Experiments based on a 1kW prototype are provided to verify the performance of proposed converter.

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

  • Kim, Sungjun;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.147-152
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    • 2016
  • In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

A Study on Neural Network for Path Searching in Switching Network (스윗칭회로의 경로설정을 위한 신경 회로망 연구)

  • Park, Seung-Kyu;Lee, Noh-Sung;Woo, Kwang-Bang
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.432-435
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    • 1990
  • Neural networks are a class of systems that have many simple processors (neurons) which are highly interconnected. The function of each neuron is simple, and the behavior is determined predominately by the set of interconnections. Thus, a neural network is a special form of parallel computer. Although major impetus for using neural networks is that they may be able to "learn" the solution to the problem that they are to solve, we argue that another, perhaps even stronger, impetus is that they provide a framework for designing massively parallel machines. The highly interconnected architecture of switching networks suggests similarities to neural networks. Here, we present switching applications in which neural networks can solve the problems efficiently. We also show that a computational advantage can be gained by using nonuniform time delays in the network.

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Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

  • Shin, Sunhae;Kang, In Man;Kim, Kyung Rok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.546-550
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    • 2013
  • We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

Device Characteristics of MFSFET with the Fatigue of the Ferroelectric Thin Film (강유전박막의 피로현상을 고려한 MFSFET 소자의 특성)

  • 이국표;강성준;윤영섭
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.191-194
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    • 1999
  • Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

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A study on neural network for information switching function (정보교환기능을 위한 신경 회로망 연구)

  • 이노성;박승규;우광방
    • 제어로봇시스템학회:학술대회논문집
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    • 1990.10a
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    • pp.213-217
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    • 1990
  • Neural networks are a class of systems that have many simple processors (neurons) which are highly interconnected. The function of each neuron is simple, and the behavior is determined predominately by the set of interconnections. Thus, a neural network is a special form of parallel computer. Although a major impetus for using neural networks is that they may be able to "learn" the solution to the problem that they are to solve, we argue that another, perhaps even stronger, impetus is that they provide a framework for designing massively parallel machines. The highly interconnected architecture of switching networks suggests similarities to neural networks. Here, we present two switching applications in which neural networks can solve the problems efficiently. We also show that a computational advantage can be gained by using nonuniform time delays in the network.e network.

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Study on the Parallel Resonant Inverter of an High Frequency Induction Heating System which the Frequency Tracking and the Power Regulation is possible (주파수 추종과 정전력 제어가 가능한 고주파 유도가열기의 병렬 공진형 인버터에 대한 연구)

  • 김남수;김태언;김승철;임영도
    • Proceedings of the IEEK Conference
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    • 2002.06e
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    • pp.63-66
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    • 2002
  • This paper has been studied the parallel resonant inverter which controlling the constant power and tracking the load resonant frequency with PLL is possible, in order to minimize switching losses. The current-fed full-bridge type parallel resonant inverter of an induction heating system was composed of IGBT in switching device. For regulating the output power of an induction heating system, the Fuzzy controller is used. The Fuzzy controller makes the control signal for a stable power regulating control and when reference is changed, it is superior to adaptability. It has been evaluated a stable behavior for a noise with switching and a load disturbance.

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