• 한국의류학회지
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• 제33권3호
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• pp.366-378
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• 2009

The purpose of this study was to understand fashion product consumers' relationship dissolution by considering the characteristics of customer behavior and examining the connection between the main variables. The survey was conducted on 623 women over 20 years old who had experienced relationship dissolution or problems with regular fashion stores in the areas of Seoul and Kyungki in September 2005. The SPSS 12.0 package and Amos program were used to analyze the data. The results of this study were as follows: First, service recovery justice of a fashion store, interactional justice, distributive justice, and procedural justice had effects on encounter satisfaction. Furthermore, encounter satisfaction influenced relationship dissolution behavior, voice, exit, loyalty, neglect via overall satisfaction. Second, there were differences in relationship dissolution behavior according to consumer loyalty and switching costs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• 한국자기학회지
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• 제17권5호
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• pp.188-193
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• 2007

[ $1.00{\times}0.24\;{\mu}m^2$ ] 크기의 $Ni_{80}Fe_{20}$ 박막의 자화 반전 거동을 자화 용이축으로 1 ns 이하의 펄스 자기장의 지속 시간과 세기를 변수로 인가하여 micromagnetics 시뮬레이션으로 관찰하였다. 자성 박막은 직사각형과 타원형의 모양을 가지며, 두께는 2 nm와 4 nm로 설정하였다. 실험 결과 $Ni_{80}Fe_{20}$ 박막의 두께와 모양에 따라 각각 다른 경향을 보이는 것을 확인할 수 있었다. 박막의 두께에 따라 두께 방향으로 형성되는 반자장의 크기 차에 의해 edge domain에서 스핀의 회전속도와 스핀 스위칭의 거동에 차이가 생기며, 박막이 두꺼울수록 자화 반전에 더 긴 펄스 지속 시간과 강한 펄스 자기장이 필요하다는 것을 확인하였다. 한편, 자화 반전이 예상되는 영역에서 자화 반전이 일어나지 않는 비정상적인 자화 반전 영역을 발견할 수 있었는데, 박막의 모양이 타원일 때와 박막의 두께가 얇은 경우에 그 영역이 더욱 불규칙적이고, 넓게 분포하였다. 이러한 현상은 막의 두께가 매우 얇기 때문에 두께 방향으로 형성된 강한 반자장의 영향에 의해 나타나는 것으로 여겨진다. Edge domain이 더 많은 직사각형 모양의 경우 자화반전이 일어나는 동안 자기모멘트의 세차 운동에 의해 생기는 $M_z$ 성분, 즉 두께방향으로 형성된 반자장이 더 작고, 이에 따라 자화 반전이 예상되는 영역에서 자화 반전이 일어나지 않는 비정상적인 자화 반전 영역이 더 적어짐을 확인하였다. 본 시뮬레이션 결과는 자성박막의 안정된 고속 자화반전을 위해서는 반자장의 영향을 최소화하는 것이 중요하다는 것을 보여준다.

• 한국산업정보학회논문지
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• 제19권6호
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• pp.131-150
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• 2014

본 연구는 스마트폰 이용고객이 현 이동통신업체에서 타제품 및 통신사 변경 등으로 전환하려고 할 경우 고객의 주관적 판단에 미치는 요인은 무엇이며, 이러한 전환의도가 궁극적으로 전환기대성과에 어떠한 영향을 미치는지 한국과 중국소비자를 중심으로 연구모형을 제시하였다. 분석 결과 한국 중국이용자 모두 전환의도는 전환기대성과에 정(+)의 영향을 미치는 것으로 분석되었다. 또한 브랜드신뢰성, 기능품질 및 거래의 전반적분위기는 전환의도에 정(+)의 영향을 미치는 것으로 분석되었다. 그러나 개인혁신성은 한국이용자의 경우 전환의도에 정(+)의 영향을 미치나, 중국의 경우에는 통계적으로 유의하지 않은 것으로 나타났다. 또한 콘텐츠품질의 경우 전환의도에 정(+)의 영향을 미치는 것으로 분석된 것은 중국이용자의 경우이고 한국이용자는 통계적으로 영향을 미치지 않은 것으로 확인 되었다. 본 연구는 양 국가 이용자 간 문화적 차이점이 존재함을 실증분석을 통해 제시되었기 때문에 스마트폰 이용고객 유지 및 관리를 위한 전략적 방안에 많은 시사점을 제공하였다.

• Journal of the Korean Data and Information Science Society
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• 제28권2호
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• pp.451-459
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• 2017

There are many researches showing that when a process change has occurred, variable sampling intervals (VSI) control chart is better than the fixed sampling interval (FSI) control chart in terms of reducing the required time to signal. When the process engineers use VSI control procedure, frequent switching between different sampling intervals can be a complicating factor. However, average number of samples to signal (ANSS), which is the amount of required samples to signal, and average time to signal (ATS) do not provide any control statistics about switching performances of VSI charts. In this study, we evaluate numerical switching performances of multivariate VSI EWMA chart including average number of switches to signal (ANSW) and average switching rate (ASWR). In addition, numerical study has been carried out to examine how to improve the performance of considered chart with accumulate-combine approach under several different smoothing constant and sample size. In conclusion, process engineers, who want to manage the correlation coefficients of related quality variables, are recommended to make sample size as large and smoothing constant as small as possible under permission of process conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Journal of the Korean Data and Information Science Society
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• 제26권4호
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• pp.997-1006
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• 2015

In industrial quality control, when engineers use VSI control procedure they should consider both required time to signal and switching behaviors together in the case of production process changed. Up to the present, many researchers have studied fixed sampling interval (FSI) chart and variable sampling interval (VSI) chart in the points of average number of samples to signal (ANSS) and average time to signal (ATS). However, ANSS and ATS do not provide any switching information between different sampling intervals of VSI schemes. In this study, performances of two sampling intervals VSI chart and three sampling intervals VSI chart are evaluated and compared. The numerical results show that ANSS and ATS values of two sampling intervals VSI chart and three sampling interval VSI chart are similar regardless the amount of shifts. However, the values of switching behaviors including ANSW are less efficient in three sampling intervals VSI charts than in two sampling intervals VSI chart.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권7호
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• pp.315-319
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• 2003

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. The quench currents of the switching elements were distributed between 33.9 A and 35.6 A. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6 A. On the other hand, $2{\times}2$ and $3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• 한국광학회지
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• 제9권2호
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• pp.117-122
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• 1998

쌍안정 TN LCD의 스위칭 특성을 Berreman에 의해 제시된 backflow를 고려한 이론적 모델을 적용하여 해석하였다. 그리고 이 모델을 적용하여 $180^{\circ}$ 쌍안정 TN 액정셀이 쌍안정 특성을 갖기 위해서는 두 유리기판을 서로 반대 방향으로 러빙해야 하고 d/p도 중요한 요소임을 확인하였다.