• Journal of the Korean Society of Clothing and Textiles
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• v.33 no.3
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• pp.366-378
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• 2009

The purpose of this study was to understand fashion product consumers' relationship dissolution by considering the characteristics of customer behavior and examining the connection between the main variables. The survey was conducted on 623 women over 20 years old who had experienced relationship dissolution or problems with regular fashion stores in the areas of Seoul and Kyungki in September 2005. The SPSS 12.0 package and Amos program were used to analyze the data. The results of this study were as follows: First, service recovery justice of a fashion store, interactional justice, distributive justice, and procedural justice had effects on encounter satisfaction. Furthermore, encounter satisfaction influenced relationship dissolution behavior, voice, exit, loyalty, neglect via overall satisfaction. Second, there were differences in relationship dissolution behavior according to consumer loyalty and switching costs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.188-193
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• 2007

We simulated the magnetization reversal behavior of submicron-thickness magnetic films by applying pulses of sub-ns-long durations and amplitudes along the easy axis. The films were rectangular and elliptical $Ni_{80}Fe_{20}$, and their thickness was 2 nm and 4 nm. We observed different behaviors depending upon the shape and thickness of the films and found a normal non-switching in regions in which we expected complete switching after relaxation. In the elliptical film, the non-switching regions were found to be random and to be widely distributed throughout the switching map. The strong demagnetization field along the z-axis, the film thickness direction, is likely responsible for this abnormal behavior. In the rectangular film, the abnormal non-switching regions were less distributed than they were in the elliptical film due to edge domains resulting from the small $M_z$ or demagnetization field during the switching. Our simulation confirms that large demagnetization is detrimental to the ultra-fast magnetization reversal of magnetic ultra-thin films.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.6
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• pp.131-150
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• 2014

This study investigates factors, which affect subjective judgment of Smartphone users when they switch to a new product or other mobile carrier, and examine a relationship between switching intention and switching expected performance through users of in Korea and China. The results of the study showed that switching intention is positively associated with switching expected performance in both Korean and Chinese users. Brand reliability, functional quality, and general climate for Smartphone business have a significant impact on switching intention in both countries. In addition, personal innovation has a significant impact on switching intention of Korean users but Chinese. However, content quality has the effect on switching intention of Chinese user but Korean. This study provides useful strategies for switching behavior of Smartphone users of two different countries in the mobile industry.

• Journal of the Korean Data and Information Science Society
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• v.28 no.2
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• pp.451-459
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• 2017

There are many researches showing that when a process change has occurred, variable sampling intervals (VSI) control chart is better than the fixed sampling interval (FSI) control chart in terms of reducing the required time to signal. When the process engineers use VSI control procedure, frequent switching between different sampling intervals can be a complicating factor. However, average number of samples to signal (ANSS), which is the amount of required samples to signal, and average time to signal (ATS) do not provide any control statistics about switching performances of VSI charts. In this study, we evaluate numerical switching performances of multivariate VSI EWMA chart including average number of switches to signal (ANSW) and average switching rate (ASWR). In addition, numerical study has been carried out to examine how to improve the performance of considered chart with accumulate-combine approach under several different smoothing constant and sample size. In conclusion, process engineers, who want to manage the correlation coefficients of related quality variables, are recommended to make sample size as large and smoothing constant as small as possible under permission of process conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Journal of the Korean Data and Information Science Society
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• v.26 no.4
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• pp.997-1006
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• 2015

In industrial quality control, when engineers use VSI control procedure they should consider both required time to signal and switching behaviors together in the case of production process changed. Up to the present, many researchers have studied fixed sampling interval (FSI) chart and variable sampling interval (VSI) chart in the points of average number of samples to signal (ANSS) and average time to signal (ATS). However, ANSS and ATS do not provide any switching information between different sampling intervals of VSI schemes. In this study, performances of two sampling intervals VSI chart and three sampling intervals VSI chart are evaluated and compared. The numerical results show that ANSS and ATS values of two sampling intervals VSI chart and three sampling interval VSI chart are similar regardless the amount of shifts. However, the values of switching behaviors including ANSW are less efficient in three sampling intervals VSI charts than in two sampling intervals VSI chart.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.7
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• pp.315-319
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• 2003

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. The quench currents of the switching elements were distributed between 33.9 A and 35.6 A. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6 A. On the other hand, $2{\times}2$ and $3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.117-122
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• 1998

We modeled the dynamic switching behavior of a bistable twisted-nematic liquid crystal cell by employing the Berreman's backflow model. Although viscosity paramenters of the liquid crystal material are not known, numerically calculated optical switching characteristics shows good agreement with experimental results. With this model we also have shown that bistable switching can be observed in a $180^{\circ}$ twisted cell only when two alignment layers are rubbed in the opposite direction.