• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.50-55
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• 2011

In this paper, Intermediate frequency tunable 4th order Switched Capacitor(SC) bandpass Sigma-Delta(${\Sigma}-{\Delta}$) modulator using feedback integrator using feedback integrator coefficients is proposed. The center frequency of the modulator can be easily changed than conventional structure because of a number of integrator coefficients which is decided rate of capacitors in circuit is reduced. In addition additive clocks and additive clock generating circuit are not necessary. The purposed modulator was implemented in $0.18{\mu}m$ CMOS technology. The resolution of the modulator within 200 kHz bandwidth and 80 MHz sampling frequency under fin = 15 MHz, 20 MHz, 25 MHz are over 12 bit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.221-224
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• 2012

This paper presents a CMOS interface circuit for MEMS acceleration sensor. It consists of a capacitance to voltage converter(CVC), a second-order switched-capacitor (SC) integrator and comparator. A bandgap reference(BGR) has been designed to supply a stable bias to the circuit and a ${\Sigma}{\Delta}$ Modulator with chopper - stabilization(CHS) has also been designed for more suppression of the low frequency noise and offset. As a result, the output of this ${\Sigma}{\Delta}$ Modulator increases about 10% duty cycle when the input voltage amplitude increases 100mV and the sensitivity is x, y-axis 0.45v/g, z-axis 0.28V/g. This work is designed and implemented in a 0.35um CMOS technology with a supply voltage of 3.3V and a sampling frequency of 3MHz sampling frequency. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.800-807
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• 2006

To enhance the conversion speed more fast, we separate the determination process of MSB and LSB with the two independent ADC circuits of the Incremental Sigma Delta ADC. After the 1st Incremental Sigma Delta ADC conversion finished, the 2nd Incremental Sigma Delta ADC conversion start while the 1st Incremental Sigma Delta ADC work on the next input. By determining the MSB and the LSB independently, the ADC conversion speed is improved by two times better than the conventional Extended Counting Incremental Sigma Delta ADC. In processing the 2nd Incremental Sigma Delta ADC, the inverting sample/hold circuit inverts the input the 2nd Incremental Sigma Delta ADC, which is the output of switched capacitor integrator within the 1st Incremental Sigma Delta ADC block. The increased active area is relatively small by the added analog circuit, because the digital circuit area is more large than analog. In this paper, a 14 bit Extended Counting Incremental Sigma-Delta ADC is implemented in $0.25{\mu}m$ CMOS process with a single 2.5 V supply voltage. The conversion speed is about 150 Ksamples/sec at a clock rate of 25 MHz. The 1 MSB is 0.02 V. The active area is $0.50\;x\;0.35mm^{2}$. The averaged power consumption is 1.7 mW.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.217-218
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• 2008

Since the digital TV signal band is very wide ($54{\sim}806MHz$), the VCO used in the frequency synthesizer must also have a wide frequency tuning range. Multiple LC VCOs have been used to cover such wide frequency band. However, the chip area increases due to the increased number of integrated inductors. A general method for achieving both reduced VCO gain(Kvco) and wide frequency band is to use the switched-capacitor bank LC VCO. In this paper, a scheme is proposed to cover the full band using only one VCO. The RF VCO block designed using a 0.18um CMOS process consists of a wideband LC VCO with reduced variation of VCO gain and frequency steps. Buffers, divide-by-2 circuits and control logics the simulation results show that the designed circuit has a phase noise at 100kHz better than -106dBc/Hz throughout the signal band and consumes $9.5{\sim}13mA$ from a 1.8V supply.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.265-267
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• 2008

As generally recognized, the driving performance of a SRM at higher speed will be degraded due to the effects of back electromagnetic force (EMF). This phenomenon can be improved via voltage boosting. So in this paper an improved converter of enhancing the performance for four-phase switched reluctance motor (SRM) is proposed. By using one additional capacitor and switches, an extra controllable boosted voltage can be produced during the rise and fall periods of a motor phase current. Then this active boosted voltage can reduce the effect of EMF on the current, particularly at high speeds. The attractive features of the proposed converter are as follows: obtaining boosted voltage to improve performance of SRM with same numbers of switch and diode as asymmetric converter, having higher control flexibility and capability of boosting voltage compared with passive boosting converters, possessing lower cost and simple control in comparison with existing active boosting converters. The performances of the proposed circuit are verified by the simulation and experiment results.

• Journal of the Korea Society of Computer and Information
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• v.3 no.2
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• pp.77-84
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• 1998

The continuous time signal system by development of CMOS technology have been receiving consideration attention. In this paper, Low pass filter using CMOS floating resistor have been designed with cut off frequency for speech signal processing. Especially a new floating resistor consisting entirely of CMOS devices in saturation has been developed. Linearity within $\pm$0.04% is achieved through nonlineartiy via current mirrors over an applied range of $\pm$1V. The frequency response exceeds 10MHz, and the resistors are expected to be useful in implementing integrated circuit active RC filters. The low pass filter designed using this method has simpler structure than switched capacitor filter. So reduce the chip area. The characteristics of the designed low pass filter using this method are simulated by pspice program.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.184-191
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• 2013

In this paper, bidirectional AC-DC converter using dual half-bridge converter is proposed. A transformer leakage inductance in the dual half-bridge converter is used for making resonance with the capacitor of the voltage-doubler, which can help the switched current to be sinusoidal without extra inductive component and also the switching loss can be reduced through operation such as ZVS, ZCS. Both circuit analysis and design guideline are described, and also the feasibility for the proposed converter is shown through the hardware implementation and the experimental results.

• Journal of Power Electronics
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• v.18 no.3
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• pp.662-671
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• 2018

This paper presents a new structure for a step up dc-dc converter, which has several advantageous features. Firstly, the input dc source and the clamped capacitor are connected in series to transfer energy to the load through dual voltage multiplier cells. Therefore, the proposed converter can produce a very high voltage and a high conversion efficiency. Secondly, a double voltage clamped circuit is introduced to the primary side of the coupled inductor. The energy of the leakage inductance of the coupled inductor is recycled and the inrush current problem of the clamped circuits can be shared equally by two synchronous clamped capacitors. Therefore, the voltage spike of the switch tube is solved and the current stress of the diode is reduced. Thirdly, dual voltage multiplier cells can absorb the leakage inductance energy of the secondary side of the coupled inductor to obtain a higher efficiency. Fourthly, the active switch turns on at almost zero current and the reverse-recovery problem of the diodes is alleviated due to the leakage inductance, which further improves the conversion efficiency. The operating principles and a steady-state analysis of the continuous, discontinuous and boundary conduction modes are discussed in detail. Finally, the validity of this topology is confirmed by experimental results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..