• Title/Summary/Keyword: Switch design

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A study on the design and fabrication of electrostatically actuatedRF MEMS switches (정전 구동형 RF MEMS 스위치의 설계 및 제작에 관한 연구)

  • Park, Jae-Hyoung
    • Journal of Sensor Science and Technology
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    • v.19 no.4
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    • pp.320-327
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    • 2010
  • In this paper, electrostatically actuated direct contact type RF MEMS switches have been designed and demonstrated. As driving structures of the switch, cantilever, bridge, and torsion spring beam structures are used and the actuation voltage characteristics of the switches have been compared and discussed. The designed RF switches are fabricated with the surface micromachining technology using the electroplated gold and nickel structures. The characteristics of the fabricated switches are measured and analyzed. The switch, which is fabricated using the 510 ${\mu}m$-length bridge structure with the thickness of 1.5 ${\mu}m$, is actuated with 15 V driving voltage. The insertion losses are less than 0.2 dB over the measured frequency ranges from 0 to 20 GHz and the isolations are more than 30 dB.

The Analysis of operational characteristic of superconducting current generator by computer simulation (시뮬레이션을 통한 정류형 초전도 전류발생장치의 동작특성해석)

  • Chu, Yong;Joo, Min-Seok;Hong, Jung-Bae;Ko, Tae-Kuk
    • Proceedings of the KIEE Conference
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    • 1995.07a
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    • pp.95-97
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    • 1995
  • A superconducting current generator, or a superconducting rectifier(SCR) is used as a current source to energize a superconducting magnets in SMES, MRI. We selected a full-wave SCR among various SCR models and analyzed its operational characteristics by computer simulation. In process of pumping the current, the improvement of performance is dependent on how much bigger the open resistance of the switch is in comparison to load coil impedance when one of two switches become active. Faster transfer can he seen in resistive commutation mode by shortening the time elapsed for the resistance to arrive at certain level from zero state. Although recovery time for the switch has no direct effect on current pumping, optimal switch design is needed to increasing operational frequency.

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Alleviating Deformation of MEMS Structure in Surface Micromachining (표면미세가공시 발생하는 MEMS 구조물의 변형 억제)

  • Hong Seok-Kwan;Kweon Soon-Cheol;Jeon Byung-Hee;Shin Hyung-Jae
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.8 s.185
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    • pp.163-170
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    • 2006
  • By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

A Study on design of the Ferroelectrics Cantilever for RF Switch (RF Switch용 강유전체 Cantilever 설계에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Muller, A.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.652-655
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    • 2004
  • RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

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A Zero-Current-Zero-Voltage-Transition Flyback Converter using Auxiliary Circuit (보조 회로를 활용한 ZCZVT 소프트 스위칭 플라이백 컨버터)

  • Ju, Hyeon-Seung;Choi, Hyun-Chil
    • The Transactions of the Korean Institute of Power Electronics
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    • v.23 no.6
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    • pp.397-402
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    • 2018
  • In this study, a high-efficiency flyback converter that uses a soft-switching auxiliary circuit is proposed. The structure of the proposed converter adds an inductor, switch, diode, and capacitor to the conventional flyback converter. The switch in the auxiliary circuit and the main switch are turned on and off under soft-switching conditions. Therefore, the switching losses of the proposed flyback converter are considerably smaller than those of conventional flyback converters. The performance of the proposed flyback converter is validated by experiments on a 100 W single-output flyback converter prototype, and design guidelines are presented.

Design of High voltage nano pulse generator circuit for ion shutter of particle accelerator (입자가속기 Ion gate 구동을 위한 고전압 nano-pulse 발생기 회로 설계)

  • Oh, Hyun Jun;Jeong, Ku Young;Song, Kwan Seok;Roh, Chung Wook
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.248-250
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    • 2019
  • 입자가속기는 물질의 미세 구조를 밝히기 위해 기본 입자를 가속, 충돌시키는 장치로 최근 암치료 등 의학적 용도로도 이용되고 있다. 그러나 고속으로 고압을 인가시켜야 하는 장치인 만큼 기존에 명확히 설립된 회로가 없다. 이에 본 논문에서는 Ion gate를 등가회로로 구성하여 Fast Switch 장치의 기본 회로를 제안 및 분석, 실험하였다. 또한 기본 회로에서 발생하는 문제들을 개선하고자 RC Input filter와 기타 파라미터들의 설계와 Fast switch와 Ion gate를 잇는 wire 내의 기생성분을 고찰하였고 Ion gate 구동을 위해 기준이 되는 명확한 Fast switch 회로를 제안한다.

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Development of Switching Power Module with Integrated Heat Sink and with Mezzanine Structure that Minimizes Current Imbalance of Parallel SiC Power Semiconductors (SiC 전력반도체의 병렬 구동 시 전류 불균형을 최소화하는 Mezzanine 구조의 방열일체형 스위칭 모듈 개발)

  • Jeong-Ho Lee;Sung-Soo Min;Gi-Young Lee;Rae-Young Kim
    • The Transactions of the Korean Institute of Power Electronics
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    • v.28 no.1
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    • pp.39-47
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    • 2023
  • This paper applies a structural technique with uniform parallel switch characteristics in gates and power loops to minimize the ringing and current imbalance that occurs when a general discrete package (TO-247)-based power semiconductor device is operated in parallel. Also, this propose a heat sink integrated switching module with heat sink design flexibility and high power density. The developed heat dissipation-integrated switching module verifies the symmetry of the parasitic inductance of the parallel switch through Q3D by ansys and the validity of the structural technique of the parallel switch using the LLC resonant converter experiment operating at a rated capacity of 7.5 kW.

Establishing a stability switch criterion for effective implementation of real-time hybrid simulation

  • Maghareh, Amin;Dyke, Shirley J.;Prakash, Arun;Rhoads, Jeffrey F.
    • Smart Structures and Systems
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    • v.14 no.6
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    • pp.1221-1245
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    • 2014
  • Real-time hybrid simulation (RTHS) is a promising cyber-physical technique used in the experimental evaluation of civil infrastructure systems subject to dynamic loading. In RTHS, the response of a structural system is simulated by partitioning it into physical and numerical substructures, and coupling at the interface is achieved by enforcing equilibrium and compatibility in real-time. The choice of partitioning parameters will influence the overall success of the experiment. In addition, due to the dynamics of the transfer system, communication and computation delays, the feedback force signals are dependent on the system state subject to delay. Thus, the transfer system dynamics must be accommodated by appropriate actuator controllers. In light of this, guidelines should be established to facilitate successful RTHS and clearly specify: (i) the minimum requirements of the transfer system control, (ii) the minimum required sampling frequency, and (iii) the most effective ways to stabilize an unstable simulation due to the limitations of the available transfer system. The objective of this paper is to establish a stability switch criterion due to systematic experimental errors. The RTHS stability switch criterion will provide a basis for the partitioning and design of successful RTHS.

Multi-channel Current Balancing Single Switch LED Driver for LED Backlight (LED Backlight를 위한 다채널 전류평형 단일스위치 LED 구동회로)

  • Hwang, Sang-Soo;Han, Sang-Kyoo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.21 no.4
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    • pp.320-327
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    • 2016
  • We propose a multi-channel current-balancing single switch light-emitting diode (LED) driver for a 3D TV. Conventional LED drivers require non-isolated DC/DC converters as many as the number of LED channels, whereas the proposed LED driver needs only one power switch and several balancing capacitors instead of expensive non-isolated DC/DC converters. Therefore, the proposed driver features a simple structure with low cost and high efficiency. In particular, because its power switch can be turned off under the zero-current switching condition, the proposed driver has desirable advantages, such as improved electromagnetic interference characteristics and high efficiency. Moreover, it only uses a small number of DC blocking capacitors with no additional active devices for the current balancing of multi-channel LEDs. Therefore, the proposed driver exhibits high reliability and cost effectiveness. To confirm the validity of the proposed driver, we perform a theoretical analysis and present design considerations and experimental results obtained from a prototype that is applicable to a 46" LED TV.

Analysis of Non - Ideal Voltage Inverter Switch and its Applications to Switched - Capacitor Filter Design (비이상적인 전압 인버터 스위치 동작에 대한분석및 이를 이용한 스위치드-캐패시터 필터 설계 방법)

  • 이방원;박송배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.19 no.6
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    • pp.41-51
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    • 1982
  • This paper proposes a method of analyzing the effect of non-ideal VIS (Voltage Inverter Switch) operation on SCF characteristics. In the special case of the VIS realized with only one switch, equivalent circuits of the elements proposed in [1]. [2]. [3] are obtained from the above results. Applying these results, SCF's operating at higher frequency than the conventional ones can be implemented and the equivalent circuits of most SC circuits can be obtained. Expermental results of a low-pass filter and a band-stop filter show good agreements with the theoretical characteristics.

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