• Journal of Preventive Medicine and Public Health
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• v.20 no.1 s.21
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• pp.97-113
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• 1987

This study was carried out to know physical growth and development, physical and nutritional indices and body fat weight and so forth by semi-longitudinal research method to measure body height, body weight, chest girth and sitting height of 260 of general high school and 306 of vocational high school 3rd grade students who are living in Seoul and born from 1966 March 1st to 1967 Feb.28th. The results are as follows: 1) Physical growth and development Growth in terms of body height showed one step straight linear development, andthat of body weight showed two step straight linear development in each section in high school. The age of cross over between two sexes of general high school students was between 10.6 to 12. 3 years in body height, between 10.8 to 13 years in body weight, between 11.2 to 14.6 years in chest girth and between 10 to 13 years in sitting height. The age of cross over between two sexes of vocational high school students was between 10.5 to 12.5 years in body height, between 10.5 to 12.5 years in body weight, between 10.5 to 12.5 years in chest girth and between 10.5 to 12.5 years in sitting height. In this periods, female group was superior to male group and after that male group was superior to female group again. The growth of vocational school students was superior to that of general school students in both sexes in terms of body height and body weight significantly. 2) Physical growth and nutritional indices In all cases of relative body weight, relative chest girth and relative sitting height, it was found to be increasing thereafter with advancing ages. In cases of $R{\"{o}}hrer$ index and Kaup index, it was found to be reaching to normal state thereafter with advancing ages. In each case of Vervaeck and Pelidisi index, it was found to be increasing and reaching to normal state thereafter with advancing ages. 3) Total body fat by vital measuring method Average values of body surface area, body volume and body density are measured indirectly by using the body height and body weight as Table 12, 13 and 14. The rate of body fat weight of general high school students was from minimum $11.96{\pm}3.53%(3.33{\pm}1.10kg$) to maximum $18.25{\pm}6.46%(9.08{\pm}2.01kg$) in male and from $25.88{\pm}3.62%(7.96{\pm}0.78kg$) to $43.00{\pm}7.22%(12.91{\pm}1.21kg$) in female. The rate of body fat weight of vocational high school students was from minimum $11.20{\pm}2.88%(3.32{\pm}1.13kg$) to maximum $17.16{\pm}5.88(10.83{\pm}3.16kg$) in male and from minimum $25.11{\pm}2.26%(7.91{\pm}0.89kg$) to maximum $42.16{\pm}7.96%(13.22{\pm}1.75kg$) in female.

• Food Science and Preservation
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• v.10 no.2
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• pp.125-130
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• 2003

This study was carried out to investigate the thermo-physical properties and design Freezing time prediction model from data of freezing test of Kimchi. Density of Kimchi were measured as 1001.9 ${\pm}$0.03 kg/㎥ at unfrozen state, 987.0 ${\pm}$0.07 kg/㎥ at frozen state and volume of the Kimchi expanded 4.67% at -l5$^{\circ}C$. Initial freezing point of Kimchi and seasoning were -4.0$^{\circ}C$ and -2.5$^{\circ}C$, respectively. Freezing ratio of Kimchi were estimated more than 50％ at -5.0$^{\circ}C$, more than 75% at -l0$^{\circ}C$ and approximately 90% at -25$^{\circ}C$. To obtain equation for freezing time prediction of Kimchi, freezing time(Y) was regressed against the reciprocal( $X_3$) of difference of initial freezing point and freezing medium temperature, reciprocal( $X_4$) of surface heat transfer coefficient, the initial temperature( $X_1$) and thickness( $X_2$) of samples. As results of the multiple regression analysis, equations were obtained as follows. Y$_{kimchi}$=3.856 $X_1$+13982.8 $X_2$+8305.166 $X_3$+ 3559.181 $X_4$-639.189( $R^2$=0.9632). These equations shown better results than previous models, and the accuracy of its was very high as average absolute difference of about 10% in the difference between the fitted and experimental results.

• Journal of the Korean Chemical Society
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• v.50 no.5
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• pp.362-368
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• 2006

SH group modifying chemicals were used to characterize the eight cysteine residues of cabbage PLD. 5,5-dithiobis(2-nitrobenzoate)(DTNB) was used to titrate the SH group of cysteine residues . Based on the optical density at 412nm due to the reduced DTNB, 4 SH groups are found to be present in a native PLD while 8 SH groups in the denatured PLD whose tertiary structure was perturbed by 8M urea. The results imply that among the 8 cysteine residues of PLD, the half(4) are exposed on the surface whereas the other half are present at the interior of the enzyme tertiary structure. The PLD was inactivated by SH modifying reagents such as p-chloromercuribenzoate(PCMB), iodoacetate, iodoacetamide, and N-ethylmaleimide. At the addition of dithiothreitol(DTT) only the PCMB inhibited PLD activity was recovered reversibly. The micro-environment of the exposed SH group of cysteine residues was examined with various disulfide compounds with different functional groups and we found that anionic or neutral disulfides appear to be more effective than the positively charged cystamine for inactivating the PLD activity. The effect of redox state of cysteine residues on the PLD activity was further explored with H2O2. The oxidation of SH groups by H2O2 inhibited the PLD activity more than 70%, which was mostly recovered by DTT. From these results, we could confirm chemically that all the cysteine residues of PLD are present as in their reduced SH forms and the 4 SH groups exposed on the surface of the enzyme may play important roles in the regulation of PLD activity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.31 no.4
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• pp.331-339
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• 2013

LiDAR has been one of the widely used and important technologies for 3D modeling of ground surface and objects because of its ability to provide dense and accurate range measurement. The objective of this research is to develop a method for automatic detection and modeling of railroad power lines using high density LiDAR data and RANSAC algorithms. For detecting railroad power lines, multi-echoes properties of laser data and shape knowledge of railroad power lines were employed. Cuboid analysis for detecting seed line segments, tracking lines, connecting and labeling are the main processes. For modeling railroad power lines, iterative RANSAC and least square adjustment were carried out to estimate the lines parameters. The validation of the result is very challenging due to the difficulties in determining the actual references on the ground surface. Standard deviations of 8cm and 5cm for x-y and z coordinates, respectively are satisfactory outcomes. In case of completeness, the result of visual inspection shows that all the lines are detected and modeled well as compare with the original point clouds. The overall processes are fully automated and the methods manage any state of railroad wires efficiently.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.17 no.4
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• pp.270-282
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• 2012

This study was conducted to investigate the impact of sand addition to an intertidal for the development of the Manila clam habitat on benthic community structure. For this, we focused on the spatio-temporal changes in the surface sediment condition and benthic community structure before and after the event. Study site was an sandbank in Gonam-myeon, Taean-gun where sand added to on July 2010. We set three stations at each of sand adding area (experimental plot) and non sand-adding area (control plot) and did sampling works ten times from June 2010 to October 2011. Directly after the event, surface sediments changed to very coarse sand, but the state was not maintained over four months because of seasonal sedimentation and finally got back to very fine sand in eight months. The number of species and density were temporarily reduced right after the event and crustacean species such as Apocorophium acutum, Photis sp. were most negatively affected by the event. However, the number of species recovered from the reduction in three months and density did in four months due to the recolonization by the existing species and species in the vicinity of the plot. During the study period, dominant species continuously changed from the species such as A. acutum, Photis sp. at the time before the event, through the species such as Heteromastus filiformis, Macrophthalmus japonicus at the time right after the event, to the species such as Musculista senhousia, Ruditapes philippinarum, Mediomastus californiensis in the latter part of the study period. Although surface sediment properties and ecological indices recovered within a certain period after the event, the recovery of community structure has never been observed up to the end of the study.

• Journal of the Korean Magnetics Society
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• v.27 no.2
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• pp.41-48
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• 2017

Recent study shows that ordered alloy of $L1_2$ $XPt_3$ (M = V, Cr, Mn, Co, and Fe) exhibits various magnetic phases such as ferromagnetic-to-antiferromagnetic transition at the $MnPt_3$ surface. Moreover, it has been argued that $CrPt_3$, in particular, possess large magnetocrystalline anisotropy and Kerr rotation with possible violation of Hund's rule. As such, we extend our work to thickness dependence of the magnetic structure of $CrPt_3$ thin film using density functional theory. Magnetic ground state of the bulk $CrPt_3$ turns out to be ferromagnetic (FM), where other magnetic phases such as A-type (A-AF), C-type (C-AF), and G-type antiferromagnetic (G-AF) state have higher total energies than FM by 0.517, 0.591, and 0.183 eV, respectively, and magnetic moments of Cr in bulk are respectively 2.807 (FM), 2.805 (A-AF), 2.794 (C-AF) and $2.869_{{\mu}_B}$ (G-AF). We extend our study to $CrPt_3$(001) thin films with CrPt-and Pt-termination. The thickness and surface-termination dependences of magnetism are investigated for 3-9 monolayers (ML), where different magnetic phases from bulk emerge: C-AF for CrPt-terminated 3 ML and G-AF for Pt-terminated 5 ML have energy difference relative to FM by 8 and 54 meV, respectively. Furthermore, thickness- and surface-termination-dependent magnetocrystalline anisotropies of the $CrPt_3$(001) films are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.