• Title/Summary/Keyword: Surface sol-gel method

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Effect of Precursor Ratio on the Properties of Inorganic-Organic Hybrid TiO2-SiO2 Coating (유무기 TiO2-SiO2 혼성코팅에 미치는 전구체 배합비율의 영향)

  • Kim, Dong Kyu;Maeng, Wan Young
    • Korean Journal of Materials Research
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    • v.26 no.5
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    • pp.271-280
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    • 2016
  • When a single inorganic precursor is used for the synthesis of a sol-gel coating, there is a problem of cracking on the surface of coating layer. In order to solve this problem of surface cracking, we synthesized inorganic-organic coatings that have hybrid properties of inorganic and organic materials. Sols of various ratios (1:0.07, 0.2, 0.41, 0.82, 1.64, 3.26, 6.54, 13.2) of an inorganic precursor of Tetrabutylorthotitanate ($Ti(OBu)_4$, TBOT) and an organic precursor of ${\gamma}$-Methacryloxy propyltrimethoxysilane (MAPTS) were prepared and coated on stainless steels (SUS316L) by dip coating method. The binding structure and the physical properties of the synthesized coatings were analyzed by FT-IR, FE-SEM, FIB (Focused Ion Beam), and a nano-indenter. Dynamic polarization testing and EIS (electrical impedance spectroscopy) were carried out to evaluate the micro-defects and the corrosion properties of the coatings. The prepared coatings show hybrid properties of inorganic oxides and organic materials. Crack free coatings were prepared when the MAPTS ratio was above a critical value. As the MAPTS ratio increased, the thickness and the corrosion resistance increased, and the hardness decreased.

Chemical Mechanical Polishing (CMP) Characteristics of Ferroelectric Film (강유전체막의 CMP 연마 특성)

  • Seo, Y.J.;Park, S.W.;Kim, K.T.;Kim, C.I.;Chang, E.G.;Kim, S.Y.;Lee, W.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.140-143
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    • 2003
  • BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

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Development of ZnS/SiO2 Double Overlayers for the Enhanced Photovoltaic Properties of Quantum Dot-Sensitized Solar Cells (양자점 감응 태양전지의 광전 특성 향상을 위한 ZnS/SiO2 이중 오버레이어 개발)

  • SONG, INCHEUL;JUNG, SUNG-MOK;SEO, JOO-WON;KIM, JAE-YUP
    • Journal of Hydrogen and New Energy
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    • v.32 no.6
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    • pp.656-662
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    • 2021
  • For the high efficiencies of quantum dot-sensitized solar cells (QDSCs), it is important to control the severe electron recombination at the interface of photoanode/electrolyte. In this work, we optimize the surface passivation process of ZnS/SiO2 double overlayers for the enhanced photovoltaic performances of QDSCs. The overlayers of zinc sulfide (ZnS) and SiO2 are coated on the surface of QD-sensitized photoanode by successive ionic layer adsorption and reaction (SILAR) method, and sol-gel reaction, respectively. In particular, for the sol-gel reaction of SiO2, the influences of temperature of precursor solution are investigated. By application of SiO2 overlayers on the ZnS-coated photoanode, the conversion efficiency of QDSCs is increased from 5.04% to 7.35%. The impedance analysis reveals that the electron recombination at the interface of photoanode/electrolyte is obviously reduced by the SiO2 overlayers.

Preparation and Properties of Disc Type CuO Catalyst Impregnated Ceramic Filters (디스크형 산화구리 촉매담지 세라믹필터의 제조와 물성)

  • Hong Min-Sun;Moon Su-Ho;Lee Jae-Chun;Lee Dong-Sub;Lim Woo Taik
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.2
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    • pp.185-193
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    • 2004
  • A catalyst with CuO ceramic filter for simultaneous treatment of dust and HAP was prepared and characterized. Catalytic ceramic filter can not only potentially achieve the substantial savings in energy but provide with effective optimization and integration of process for simultaneous removal of SO$_2$, NO$_{x}$ and particulates from flue gases. Catalytic ceramic filters remove simultaneously particulates on exterior surface of filters and reduce NO to $N_2$ and $H_2O$ by SCR (Selective Catalytic Reduction) process. Preparation of catalyst impregnated ceramic filter with disk shape (Ψ 50) follow the processing of alumino-silicate ceramic filter, support impregnation and catalyst impregnation (copper oxide). Preparation routes of alumino-silicate catalyst carrier suitable for production of catalytic filters practically were studied and developed using the sol-gel and colloidal processing, homogeneous precipitation and impregnation method. Characterization of the catalyst, catalyst carrier catalytic filter materials have been performed the using various techniques such as BET, XRD, TGA, SEM. Combination of the sol-gel and colloidal processing and impregnation method is recommended to prepare catalyst carriers economically for catalytic filter applications.s.

An Antireflection and Antistatic Coatings for CRTs using PEDOT (PEDOT를 이용한 CRT용 반사방지 및 대전방지 코팅)

  • 김태영;김종은;이보현;서광석;김진열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.1
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    • pp.61-66
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    • 2002
  • A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

Preparation TiO$_2$sol using aqueous system and characteristics of its thin film (수용계를 이용한 TiO$_2$Sol의 제조와 박막의 특성)

  • 김성도;조경식;김성진
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.271-277
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    • 2000
  • Transparent $TiO_2$ thin films were prepared by the sol-gel method from titanium alkoxide aqueous solution containing large quantities of water. To prepare the aqueous system sol, the chelate compound solution were prepared from each 1 mole of titanium(IV)iso-propoxide, acetylacetone and 8 moles of isopropyl-alcohol. And then the 50 moles aqueous solution with the 0.02~0.50 moles of HCI for sol stability and the 0.3 mole of polyethylene glycol for coating adhesion were precisely dropped on the chelate compound solution. $TiO_2$thin films were fabricated by dip coating, drying and heat treatment at $400^{\circ}C$ and their characteristics were investigated by XRD, SEM and UV-visible spectrometer, The neutral sol of composition with TTIP : AcAc : IPA : $H_2O$ : PEG : HCl = 1 : 1 : 8 : 50 : 0.3 : 0.15 (molar ratio) was maintained stable sol condition and without problem for coating more than 30 days. The anatase phase $TiO_2$thin film prepared from 30 times dipping, drying and heat treating showed the flat surface and the fine microstructure of fracture surface with about 2 $\mu\textrm{m}$ thickness. Transparency of these $TiO_2$thin film was 80 % in the visible region.

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Optical and Electrical Properties with Various Post-Heating Temperatures in the Al-Doped ZnO Thin Films by Sol-Gel Process (졸-겔법에 의해 제조된 Al-Doped ZnO 박막의 후열처리 온도에 따른 전기 및 광학적 특성)

  • Ko, Seok-Bae;Choi, Moon-Sun;Ko, Hyungduk;Lee, Chung-Sun;Tai, Weon-Pil;Suh, Su-Jeong;Kim, Young-Sung
    • Journal of the Korean Ceramic Society
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    • v.41 no.10 s.269
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    • pp.742-748
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    • 2004
  • Isopropanol of low boiling point was used as a solvent to prepare Al-doped ZnO(AZO) thin films. A homogeneous and stable sol was made from Zn acetate a solute whose mole concentration was 0.7mol/$\iota$ and Al chloride as a dopant. Al-doped ZnO thin films were prepared by sol-gel method as a function of post-heating temperature from 500 to $700^{\circ}C$ and the optical and electrical properties were investigated. The c-axis orientation along (002) plane was enhanced with the increasing of post-heating temperature and the surface morphology of the films showed a homogeneous and nano-sized microstructure. The optical transmittance of the films post-heated below $650^{\circ}C$ was over $86\%$, but decreased at $700^{\circ}C$. The electrical resistivity of the thin films decreased from 73 to 22 $\Omega$-cm as the post-heating temperature increased up to $650^{\circ}C$, but increased greatly to 580 $\Omega$-cm at $700^{\circ}C$. XPS analysis indicated that the deterioration of electrical and optical properties was attributed to the precipitation of $Al_2O_3$ phase on the surface of AZO thin film. This result suggests that the optimum post-heating temperature to improve electrical and optical properties is $600^{\circ}C$.

A Study on the Improvement of the Oxidation-Resistance of the Graphite Substrate by Forming of SiC Film on its Surface (탄화규소막의 형성에 의한 흑연소지의 내산화성 향상에 관한 연구)

  • Cho, Sung-Jun;Lee, Jong-Min;Kim, In-Ki;Jang, Jeen-Suck
    • The Journal of Natural Sciences
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    • v.8 no.2
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    • pp.137-146
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    • 1996
  • To increase the oxidation-resistance of graphite substrate, we have tried to form SiC film on its surface by Sol-Gel method. TEOS(Tetraethyl orthosilicate) and phenol resin have been used as silicon(Si) and carbon(C) sources, respectively. In order to know the effect of the TEOS Sol concentration on the forming of SiC film, we have taken 5 different $H_2O$/TEOS mol ratios of 2, 4, 6, 8 and 10. And the coating states of SiC on the graphite substrate have been analyzed with X-ray diffractometer and scanning electron microscope (SEM), and we have obtained about 5${\mu}m$, 12${\mu}m$, 7${\mu}m$, 7${\mu}m$ and 2 ${\mu}m$ as the thickness of SiC coating layers, respectively. For also knowing the oxidation resistance the SiC coated graphites at $1600^{\circ}C$ were heated again at $1000^{\circ}C$ under air atmosphere for 1 hr, and as a result we have received the weight losses of 26.17%, 20.97%, 17.28%, 21.73% and 28.13%, respectively.

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Microstructure and Electrical Properties of Vanadium-doped ${Bi_4}{Ti_3}{O_{12}}$ Thin Films Prepared by Sol-gel Method (졸-겔법으로 성장시킨 바나듐이 도핑된 ${Bi_4}{Ti_3}{O_{12}}$ 박막의 미세구조 및 전기적 특성)

  • Kim, Jong-Guk;Kim, Sang-Su;Choe, Eun-Gyeong;Kim, Jin-Heung;Song, Tae-Gwon;Kim, In-Seong
    • Korean Journal of Materials Research
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    • v.11 no.11
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    • pp.960-964
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    • 2001
  • $Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

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Synthesis of TiN-Coated cBN Powder by Sol-Gel Method Using Titanium (IV) Isopropoxide (티타늄 이소프로폭사이드를 이용한 졸-겔법에 의한 TiN 코팅 cBN 분말 합성)

  • Lee, Youn Seong;Kim, Sun Woog;Lee, Young Jin;Lee, Ji Sun;Shin, Dongwook;Kim, Sae-Hoon;Kim, Jin Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.373-379
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    • 2020
  • In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiOx was uniformly coated on the surface of cBN powder particles. The obtained TiOx-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N2-5%H2 mixed gas. With increasing temperature, the chemical composition of the TiOx coating layer changed in the order of TiO2→Ti6O11→Ti4O7→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.