• 제목/요약/키워드: Surface polishing

검색결과 889건 처리시간 0.033초

부분 혀 절제술로 인해 연하 장애가 있는 환자에서 상악 구개 증대 총의치 제작 증례 (Case of making maxillary palatal augmentation complete denture for patient with dysphagia after partial glossectomy)

  • 김형석;박지영;임선영;허유리;손미경
    • 구강회복응용과학지
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    • 제34권3호
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    • pp.239-245
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    • 2018
  • 만약 혀 절제술로 인해 식괴의 형성 및 이동에 장애가 생기는 경우, 식괴가 기도를 막거나 기도로 흡인되는 연하장애가 발생할 수 있으며, 이런 경우에 구개 증대 보철물은 도움이 될 수 있다. 구강암으로 인해 부분 혀 절제술을 받은 후 음식물을 삼키기 어렵다는 주소로 내원한 환자에게 혀의 기능 운동을 인기한 상악의 연마면 인상채득을 통해 구개 증대 보철개념을 활용한 상악 총의치를 제작하여, 구개-혀 접촉 압력을 증가시켜서 연하 및 발음에 양호한 결과를 얻을 수 있었다.

심한 골 흡수와 2급 악간관계를 보이는 완전 무치악 환자의 Piezography를 이용한 총의치 수복 (Complete denture rehabilitation of fully edentulous patient with severe bone resorption and class II jaw relation using piezography)

  • 권우일;송영균;이준석
    • 대한치과보철학회지
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    • 제54권4호
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    • pp.445-450
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    • 2016
  • Piezography는 발음을 이용하여 채득된 보철 공간을 의미하며, 의치의 인공치와 연마면의 위치를 결정하는 참고점으로 사용하게 된다. 본 증례 대상은 67세 여성환자로, 새 의치 제작을 주소로 내원하였다. 기존 의치에서 2급 악간관계와 불량한 유지력을 확인할 수 있었으며, 안정적인 의치를 위해 piezography와 설측교합을 이용하기로 하였다. 통상적인 방법으로 인상 채득 후 주모형 상에서 상하악 기초상과 왁스 교합제를 제작하였고, 별도로 piezography를 위하여 하악에 추가적인 기초상을 하나 더 제작하였다. 이 추가 기초상에 실리콘 인상재를 적용 한 뒤 '시', '소', '메', '테', '데', '무' 여섯개의 발음으로 piezography를 채득하였다. 하악 인공치를 이 보철공간에 맞추어 배열한 뒤, 형태를 수정하여 설측 교합을 부여하였다. 그 결과, 환자는 새로운 의치에 기능적, 심미적으로 만족하였다.

Bathythermograph Smoked-glass slide의 간역제작법 (SELF-PREPARATION OF BATHYTHERMOGRAPH SMOKED-GLASS SLIDE)

  • 허종수
    • 한국수산과학회지
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    • 제1권2호
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    • pp.135-137
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    • 1968
  • 1938년 A. F. Spillaus에 의하여 Bathythermograph가 고안된 이내 현재까지 수차 개량된 것이 제작판매하게 되어 해양조사 또는 어장탐색에 총중한 측기로 세계 각국에서 널리 보급되었다. 이 측기는 항해중이라도 수심 270m까지 내렸다 올림으로써 수심에 대한 수온이 동시에 연속된 일선으로 도은 또는 Smoked한 유리 판상에 기록되어 신속하게 수온의 미세한 수직분포를 알 수 있어 어장탐사에 필요한 나층의 판별과 그 수탐 및 수온의 판단에 큰 도움을 준다. 여기에서는 1, 2연전 이내 수산진흥원 산하 각 해구 시험소 및 교육기관을 비롯한 해양조사 관계기관에 다수양이 공급되어 널리 사용되고 있는 B.T의 Smoked-glass slide가 없어 사용의 곤란성 및 일본 또는 미국으로부터의 수입의 귀찮은 수속을 해소시키기 위하여 본원에서 실험 제작사용한 결과로서 간단하게 B.T Smoked glass Slide를 제작할 수 있는 방법을 소개하고자 한다.

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구강내에서 임플랜트 지대주 형성 시 내부연결방식과 외부연결방식간의 열전달 효과 비교 (THE COMPARATIVE STUDY OF THERMAL INDUCTIVE EFFECT BETWEEN INTERNAL CONNECTION AND EXTERNAL CONNECTION IMPLANT IN ABUTMENT PREPARATION)

  • 허중보;고석민
    • 대한치과보철학회지
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    • 제45권1호
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    • pp.60-70
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    • 2007
  • Statement of problem: The cement-type abutment would be needed for the reduction of its body in order to correct the axis and to assure occlusal clearance. In the case of intraoral preparation, there is a potential risk that generated heat could be transmitted into the bone-implant interface, where it can cause deterioration of tissues around the implant and failed osseointegration. Purpose: The purpose of this study was to assess the difference of the heat transmitting effect on external and internal connection implant types under various conditions. Material and method: For evaluating the effects of alternating temperature, the thermocoupling wires were attached on 3 areas of the implant fixture surface corresponding to the cervical, middle, and apex. The abutments were removed 1mm in depth horizontally with diamond burs and were polished for 30 seconds at low speed with silicone points using pressure as applied in routine clinical practice. Obtained data were analyzed using Mann-Whitney rank-sum test and Wilcoxon / Kruskal-Wallis Tests. Result: Increased temperature on bone-implant interface was evident without air-water spray coolant both at high speed reduction and low speed polishing (p<.05). But, the difference between connection types was not shown. Conclusion: The reduction procedure of abutment without using proper coolant leads to serious damage of oral tissues around the implant irrespective of external and internal connection type.

구리 CMP 슬러리를 위한 산화제 $H_2O_2$의 안정성 (Stability of Oxidizer $H_2O_2$ for Copper CMP Slurry)

  • 이도원;김인표;김남훈;김상용;서용진;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.382-385
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    • 2003
  • Chemical mechanical polishing(CMP) is an essential process in the production of copper-based chips. On this work, the stability of Hydrogen Peroxide($H_2O_2$) as oxidizer of Cu CMP slurry has been investigated. $H_2O_2$ is known as the most common oxidizer in Cu CMP slurry. Copper slowly dissolves in $H_2O_2$ solutions and the interaction of $H_2O_2$ with copper surface had been studied in the literature. Because hydrogen peroxide is a weak acid in aqueous solutions, a passivation-type slurry chemistry could be achieved only with pH buffered solution.[1] Moreover, $H_2O_2$ is so unstable that its stabilization is needed using as oxidizer. As adding KOH as pH buffering agent, stability of $H_2O_2$ decreased. However, stability went up with putting in small amount of BTA as film forming agent. There was no difference of $H_2O_2$ stability between KOH and TMAH at same pH. On the other hand, $H_2O_2$ dispersion of TMAH is lower than that of KOH. Furthermore, adding $H_2O_2$ in slurry in advance of bead milling lead to better stability than adding after bead milling. Generally, various solutions of phosphoric acids result in a higher stability. Using Alumina C as abrasive was good at stabilizing for $H_2O_2$; moreover, better stability was gotten by adding $H_3PO_4$.

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$BaTiO_3$$TiO_2$ 연마제 첨가를 통한 BTO박막의 CMP (CMP of BTO Thin Films using $TiO_2$ and $BaTiO_3$ Mixed Abrasive slurry)

  • 서용진;고필주;김남훈;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.68-69
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    • 2005
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

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물이끼(Sphagnum palustre) 생육이 가능한 인공습지 사례보고 (A Case Report on the Constructed Wetland for the Growth of Sphagnum palustre)

  • 홍문기;김재근
    • 한국환경복원기술학회지
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    • 제16권6호
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    • pp.93-107
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    • 2013
  • Construction of an artificial wetland for the growth of Sphagnum palustre with emergent macrophytes (Phragmites australis, Typha angustifolia, and Zizania latifolia) was firstly tried and the growth of those plant components according to various environmental combinations has been monitored for three years. Above-ground dry weight of Z. latifolia ($1,500g/m^2$) was higher than T. angustifolia ($900g/m^2$) and P. australis ($500g/m^2$) under most environmental conditions. In overall, planted emergent macrophytes seemed to prefer polishing sand without moss peat as a substrate and relatively deep water-depth condition (20cm) rather than shallow water-depth (5cm). Despite of high calcium content in inflow water (> 15ppm) into the constructed wetland, S. palustre populations have survived in most experimental plots during the monitoring period. Substrate layer including moss peat with high surface-area might play a role as an ion-filter. After three years, relatively thicker litter-layer in Z. latifolia plots due to vigorous growth appeared to heavily depress S. palustre by physical compressing and complete shading processes. Most of all, for the continuous growth of S. palustre, physio-chemical characteristics of water and substrate must be carefully managed. In addition, companion emergent species should be also cautiously selected not to depress S. palustre by much litter production. We suggest P. australis and T. angustifolia as companion species rather than Z. latifolia.

Plate 가열방식 유리렌즈 성형공정해석을 위한 PBK40 소재의 유동 특성에 관한 연구 (A Study on Flow Characteristics of PBK40 for Glass Lens Forming Process Simulation Using a Plate Heating Type)

  • 장성호;윤길상;신광호;이영민;정우철;강정진;정태성;김동식;허영무
    • 한국정밀공학회지
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    • 제24권4호
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    • pp.115-122
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    • 2007
  • Recently, remarkable progress has been made in both technology and production of optical elements including aspheric lens. Especially, requirements for machining glass materials have been increasing in terms of limitation on using environment, flexibility of material selection and surface accuracy. In the past, precision optical glass lenses were produced through multiple processes such as grinding and polishing, but mass production of aspheric lenses requiring high accuracy and having complex profile was rather difficult. In such a background, the high-precision optical GMP process was developed with an eye to mass production of precision optical glass parts by molding press. This GMP process can produce with precision and good repeatability special form lenses such as camera, video camera, aspheric lens for laser pickup, $f-\theta$ lens for laser printer and prism, and me glass parts including diffraction grating and V-grooved base. GMP process consist a succession of heating, forming, and cooling stage. In this study, as a fundamental study to develop molds for GMP used in fabrication of glass lens, we conducted a glass lens forming simulation. In prior to, to determine flow characteristics and coefficient of friction, a compression test and a compression farming simulation for PBK40, which is a material of glass lens, were conducted. Finally, using flow stress functions and coefficient of friction, a glass lens forming simulation was conducted.

SDB와 전기화학적 식각정지에 의한 마이크로 시스템용 매몰 공동을 갖는 SOI 구조의 제조 (Fabrication of SOI Structures with Buried Cavities for Microsystems SDB and Electrochemical Etch-stop)

  • 정귀상;강경두;최성규
    • 센서학회지
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    • 제11권1호
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    • pp.54-59
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    • 2002
  • 본 논문은 Si기판 직접접합기술과 전기화학적 식각정지를 이용하여 마이크로 시스템용 매몰 공동을 갖는 SOI 구조물의 일괄제조에 대한 새로운 공정기술에 관한 것이다. 저비용의 전기화학적 식각정지법으로 SOI의 정확한 두께를 제어하였다. 핸들링 기판 위에서 Si 이방성 습식식각으로 공동을 제조하였다. 산화막을 갖는 두 장의 Si기판을 직접접합한 후, 고온 열처리($1000^{\circ}C$, 60분)를 시행하고 전기화학적 식각정지로 매몰 공동을 갖는 SDB SOI 구조를 박막화하였다. 제조된 SDB SOI 구조물 표면의 거칠기는 래핑과 폴리싱에 의한 기계적인 방법보다도 우수했다. 매몰 공동을 갖는 SDB SOI 구조는 새로운 마이크로 센서와 마이크로 엑츄에이터에 대단히 효과적이며 다양한 응용이 가능한 기판으로 사용될 것이다.

치과용 아말감의 산화환원에 관한 전기화학적 연구 (AN ELECTROCHEMICAL STUDY ON THE OXIDATION' AND REDUCTION OF DENTAL AMALGAM)

  • 이인복;이명종
    • Restorative Dentistry and Endodontics
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    • 제18권2호
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    • pp.431-445
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    • 1993
  • The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

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