• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.138-142
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• 2018

This study used HILS to test an expansion joint, which is vulnerable to the water hammer effect. The operation data for the HIL simulator was the length rate of the expansion joint by the water hammer, which was used for life prediction based on the vibration durability. For the vibration durability test, the internal pressure of the expansion joint was assumed to be a factor of the durability life, and the lifetime prediction model equation was obtained by curve fitting the lifetime data at each pressure. During the test, the major failure modes of crack and water leakage occurred on the surface of the bellows part. The lifetime prediction model typically follows an inverse power law model. The pressure is a stress factor, and the model is effective in only a specific environment. Therefore, another stress factor such as temperature will be added and considered for a mixed lifetime prediction model in the future.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.286-291
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• 1998

$SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

• Journal of the Korea Society of Computer and Information
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• v.19 no.7
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• pp.95-102
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• 2014

There are a variety of structures below the surface are buried. In particular, if It is experiencing problems in the city gas pipe or electrical wire, our safety would be greatly jeopardized. Therefore, the underground structures which encounter a variety of pollutants are highly sensitive to corrosion. So if you are not identify the degree of corrosion, it can lead to large accidents such as gas leakage. Until now, person visit directly every underground structure to measure and record manually, but This approach requires a lot of human and material resources and the continuity of management. Therefore, the research to find out the risk factors quickly via the continuous management is needed, and in this paper the structures management systems in the vehicle being moved by combining ICT underground structures for state information wirelessly collects and analyzes system is proposed.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.938-946
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• 2008

This study is on sealing leakage holes where are in landfills to make clay cakes with clay particles, which have a negative surface charge using the method of electrophoresis. Generally, electrophoresis is the motion of charged particles in a colloid under the influence of an electric field; particles with a positive charge go to the cathode and negative to the anode. In this study in order to develop the prevention system of leakages of the leachate in landfills, one-dimensional electrophoresis tests were conducted for determining the properties of the motion of the electrophoresis and cutoff using the method of electrophoresis depending on various the effect factors such as types of clays, concentrations of the clays, and applied electric field. In case of the experiments of determining the optimum clays, Na and Ca-Bentonite, Na and Ca-Montmorillonite, which have greater zeta-potential, cation, exchange capacity as well as ability of cutoff, and Micro-cement inducing cementation were chosen and then the effect of those clays was investigated. Moreover, the properties of the motion and settling of the clays were investigated following electric field varied from 0 to 1V/cm at different concentration of the clays in order to determine both the properties of the motion of the clays and the efficiency of electric field when applying different direct current. Ultimately, the ability of cutoff was examined through measuring the permeability of the clay cakes derived from the one-dimensional electrophoresis tests.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.392-399
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• 2005

Shear modulus (or rigidity) of dam material is an important parameter which can be directly associated with the deformation of dam. Seepage or leakage of water can cause the defects or cracks of dam body. The existence of cracks and rigidity of dam body are decisive information for the estimation of dam safety. Rigidity of material is mainly determined from S-wave velocity and the defects of dam body can be detected by seismic reflection survey. Therefore, seismic reflection survey will be a desirable method which can give a solution about dam safety problem. Among various physical properties of dam body, S-wave velocity is the most important information but it is not easy to get the information. In this study, diverse measuring techniques of S-wave reflection survey were attempted to get the information about S-wave velocity of dam body. Ultimately, S-wave velocity could be estimated by the analysis of SH reflection events which can be easily observed in shot gather data obtained from SH measuring technique. Meanwhile, P-wave reflection survey was also performed at the same profile. P-beam radiation technique which can reduce the surface waves and reinforce the P-wave reflection events was applied for giving a help to analyse P-wave velocity. In the end, P-and S-wave velocity, Vs/Vp, Poisson's ratio distribution of the vertical section under the profile could be acquired.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.