• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.387.2-387.2
• /
• 2016

Glass texturing is a sufficient method for changing the surface morphology to enhance the light trapping. In this study, glass texturing was applied to the perovskite solar cell for improving the current density. Glass substrates (back-side glass of FTO coated glass substrate) were textured by randomly structure assisted wet etching process using diluted HF solution at a constant concentration of etchants (HF:H2O=1:1). Then, the light trapping properties of suitable films were controlled over a wide range by varying the etching time (1, 2, 3, 4 and 5 min.). The surface texturing changed the reflected light in an angle that it can be reflected by substrate glass surface. As a result, Current density and cell efficiency were affected by light trapping layer using glass texturing method in perovskite solar cells.

• 전자공학회논문지D
• /
• 제35D권2호
• /
• pp.25-32
• /
• 1998

In this paper, we report the result of the three-dimensional topography simultor, 3D-SURFILER(SURface proFILER) for the simulation of topographical evalution of the surface, curing a plasma etching process. We employed cell-removal algorithm to represent the topographical evoluation of the surface. The visibility with shadow effect was developed and applied to the spillover algorithm. To demonstrate the capability of 3D-SURFILER, we compared with simulated profiles with the SEM picture for dry and reactive ion etching(RIE) of the Si$_{3}$N$_{4}$ film and Pt film.

• 한국자원리싸이클링학회:학술대회논문집
• /
• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
• /
• pp.185-189
• /
• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• Fibers and Polymers
• /
• 제4권4호
• /
• pp.145-150
• /
• 2003

Polypropylene nonwoven fabrics were exposed to He/$O_2$ atmospheric pressure glow discharge plasma. Surface chemical analysis and contact angle measurement revealed the surface oxidation by formation of new functional groups after plasma treatment. Weight loss (%) measurement and scanning electron microscopy analysis showed a significant plasma etching effect. It was investigated in low-stress mechanical properties of the fabrics using Kawabata Evaluation System (KES-FB). The surface morphology change by plasma treatment increased surface friction due to an enhancement of fiber-to-fiber friction, resulting in change of other low-stress mechanical properties of fabric.

• Fibers and Polymers
• /
• 제5권2호
• /
• pp.151-155
• /
• 2004

Cold plasma of $O_2$ or Ar was irradiated on hydrophobic Kapton surface to attenuate or remove the electrostatic potential. A measurement on charge dissipation speed clarifies the obscure effect of plasma. These consequences reveal that $O_2$ plasma etching is more effective than Ar plasma. After 30 days, the dissipation speed of accumulated charge on initially etched sample has not changed under summer season.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
• /
• pp.171-171
• /
• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 추계학술발표회초록집
• /
• pp.91-91
• /
• 2003

• Restorative Dentistry and Endodontics
• /
• 제18권1호
• /
• pp.114-121
• /
• 1993

The purpose of this study was to evaluate the effect on treatment methods to shear bond strength between composite resin and amalgam when the alloy surface was finished with a diamond wheel or an sandblaster. Forty round acrylic cylinders were fabricated with a diameter of 33mm and a height of 20mm to fit into the device used during shear bond strength testing. A round undercut cavity (diameter, 8mm: depth, 2.5mm) was prepared in the center of the acrylic surface and the cavity was restored using a amalgam. A total of 40 acrylic cylinders with amalgam were divided into 4 groups according to treatment method. The group treatment were as follows : Group 1 : acid etching after finishing the amalgam with diamond wheel Group 2 : no acid etching after finishing the amalgam with diamond wheel Group 3 : acid etching after sandblasting the amalgam Group 4 : no acid etching after sandblasting the amalgam The shear bond strength of composite resin bonded to amalgam of each specimen was tested with a universal testing machine at a crosshead speed of 0.5mm/min and 500kg in full scale. The results were as follow: 1. After diamond finishing, the non-acid etching group had highest shear bond strength with 7.29kg/$cm^2$ and after sandblasting, the acidetching group had lowest shear bond strength with 4.49kg/$cm^2$. 2. In both diamond finishing and sandblasting group, acid etching of the roughened amalgam surface decreased the shear bond strength. 3. The group treated with a diamond wheel had higher shear bond strength those treated with an sandblaster but there was not significanat.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.86.1-86.1
• /
• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.628-631
• /
• 2003

This study describes a new mastless nano-fabrication technique of Pyrex 7740 glass using the combination of nanomachining by nano-indenter XP and HF wet etching. First, the surface of a Pyrex 7740 glass specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by HF solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact. some sample structures were fabricated.