• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.340-340
• /
• 2016

We have prepared alumina (Al2O3) doped zinc oxide (AZO) films by DC magnetron sputtering (MS) technique and obtained higher self surface texturing at a high target angle (f). We have characterized the films and applied it as a front electrode of a single junction amorphous silicon solar cell. At a lower f the deposited films show higher values of optical gap (Eg), charge carriers mobility & concentration, crystallite grain size and wider wavelength range of transmission. At higher target angle the sheet resistance, surface roughness, haze factor etc for the films increase. For f=72.5o the haze factor for diffused transmission becomes 6.46% at 540 nm wavelength. At f=72.5o the material shows a reduction in crystallinity and evolution of a hemispherical-type sub-micron surface textures. A Monte Carlo method (MCM) of simulation of the AZO film deposition shows that such an enhanced self-surface texturing of the films at higher f is possible.

• 한국전기전자재료학회논문지
• /
• 제22권7호
• /
• pp.616-621
• /
• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
• /
• pp.172-172
• /
• 2012

A Pt-skin $Pt_3Ni$(111) surface was reported to show high catalytic activity. In this study, we investigated the magnetic properties and electronic structures of the various oriented surfaces of bulk-terminated and Pt-segregated $Pt_3Ni$ by using a first-principles calculation method. The magnetic moments of Pt and Ni are appreciably enhanced at the bulk-terminated surfaces compared to the corresponding bulk values, whereas the magnetic moment of Pt on the Pt-segregated $Pt_3Ni$(111) surface is just slightly enhanced because of the reduced number of Ni neighboring atoms. Spin-decomposed density of states shows that the dz2 orbital plays a dominant role in determining the magnetic moments of Pt atoms in the different orientations. The lowering of the d-band center energy (-2.22 eV to -2.46 eV to -2.51 eV to -2.65 eV) in the sequence of bulk-terminated (100), (110), (111), and Pt-segregated (111) may explain the observed dependence of catalytic activity on surface orientation. Our d-band center calculation suggests that an observed enhanced catalytic activity of a $Pt_3Ni$(111) surface originates from the Pt-segregation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.1137-1141
• /
• 2004

In this paper, we have improved a novel ECB mode using bend structure with high tilt angle in the unique condition by Hot plate equipment. The new control of tilt angle for nematic liquid crystal (NLC) with negative and positive dielectric anisotropy on the rubbed homeotropic polyimide (PI) using baking method by Hot plate equipment was investigated. LC tilt angle decreased with increasing baking temperature and time. We suggest that the development of the novel ECB cell using control of tilt angle on the homeotropic surface is a promising technique for the achievement of fast response time and high contrast ratio.

• 한국전기전자재료학회논문지
• /
• 제25권7호
• /
• pp.496-499
• /
• 2012

Modified structure of copper pillar bump which has trapezoidal cross section on the top region is suggested with simulation results and concept of fabrication process. Due to the large surface area of joint region between bump and solder in suggested structure, electro-migration effect can be reduced. Reduction of electro-migration is related with current density and joule heating in bump and investigated with finite element methods with variation of dimensional parameters. Mechanical characteristics are also investigated with comparing modified copper pillar bump and conventional copper pillar bump.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
• /
• pp.609-611
• /
• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• 한국전기전자재료학회논문지
• /
• 제19권1호
• /
• pp.23-28
• /
• 2006

In this paper, breakdown voltage and on-resistance characteristics of the surface doped SOI RESURF LDMOSFET were investigated as a function of surface doping depth. In order to verify the variation of characteristics, two-dimensional device simulation was carried out. Breakdown voltage of the proposed structure is varied from $73 {\~}138V$ while surface doping depth varied from $0.5{\~}2.0{\mu}m$. And on-resistance is decreased from $0.18{\~}0.143{\Omega}/cm^2$ while surface doping depth increased from $0.5 {\~}2.0{\mu}m$. Maximum breakdown voltage of the proposed structure is 138 V at $1.5{\mu}m$ depth of surface doping, yielding $22.1\%$ of improvement of breakdown voltage in comparison with that of the conventional SOI RESURF LDMOSFET with same epi-layer concentration. On-resistance characteristic is also improved about $21.7\%$.

• 문화기술의 융합
• /
• 제8권5호
• /
• pp.749-754
• /
• 2022

다양한 의료 응용 분야에서 웨어러블 및 피부 부착형 전자 패치에 피부 표면의 높은 접착력과 내수성이 요구된다. 본 연구에서는 탄소 기반 전도성 고분자 복합 소재에 개구리 발바닥의 육각 채널와 문어 빨판의 흡착 구조 패턴을 모사한 신축성 있는 전자 패치를 보고한다. 개구리의 발바닥을 모사한 육각 채널 구조는 수분을 배수하며, 균열억제 효과를 통해 점착력을 향상 시키며, 문어 빨판을 모사한 흡착 구조는 젖은 표면에서 높은 점착력을 나타낸다. 또한 고점착 전자패치는 실리콘(max. 4.06 N/cm²), 피부 복제 표면(max. 1.84 N/cm²) 등 다양한 표면에 건조 및 젖은 조건에서 우수한 접착력을 가지고 있다. 고분자 매트릭스와 탄소 입자를 기반으로한 고분자 복합소재를 통해 제작된 고점착 전자 패치는 건조 및 습한 환경에서 심전도(ECG)을 안정적으로 감지할 수 있다. 이 연구에서 보여진 특성을 기반으로 제안된 전자 패치는 다양한 생체 신호의 진단을 위한 웨어러블 및 피부 부착 센서 디바이스를 구현하는 잠재적 응용 가능성을 제시한다.

• 한국전기전자재료학회논문지
• /
• 제23권7호
• /
• pp.509-512
• /
• 2010

The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• 한국전기전자재료학회논문지
• /
• 제17권1호
• /
• pp.70-74
• /
• 2004

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi -harrier film). Transmission data of ITO film with four ITO films showed there was about large 90％ transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75％ transmission above 550nm wavelength. And, surface images measured from SEM (scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.