• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.139-145
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• 2008

In this paper, a microstrip surface wave antenna(SWA) with a frequency selective surface structure(FSS) is designed and measured. A microstrip SWA has many advantages such as low profile, low weight, easy fabrication, and compatibility with monolithic microwave integrated circuits(MMIC). In addition, it has demonstrated monopole like beam patterns. The microstrip SWA consists of two parts : a center-fed modified microstrip patch to excite surface wave, and a periodic patches to support the propagation of the surface waves. To obtain wide bandwidth, the ring type parasitic element is inserted and the circular patch is selected for the unit element in FSS structure. Experimental results show that the microstrip SWA has monopole like beam patterns at 5.9GHz. Impedance bandwidth and gain is 12% and 5.6dBi.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.5
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• pp.321-327
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• 2022

In this paper, a wrinkled structure was formed on the PDMS surface through UV/Ozone treatment, and the wrinkle structure formation mechanism was revealed through physicochemical characterization. A wrinkle structure was formed on the PDMS surface through UV/Ozone treatment for 30 min, and periodic wrinkle formation on the PDMS surface was confirmed by cross-sectional imaging of the scanning electron microscope. In addition, through x-ray photoelectron spectroscopy spectral analysis, it was confirmed that the silica-like-surface of SiOx on the PDMS surface was formed by UV/Ozone. The results of this study not only improve the understanding of the mechanism of wrinkle structure formation on the PDMS surface by UV/Ozone treatment, but also can be used as a basic study to adjust the amplitude and period of the wrinkle structure according to UV/Ozone irradiation conditions in the future.contact angles and the surface energies of FSAMs, it was confirmed that pretilt angles of LC molecules increased according to the alkyl chain length. High optical transparency and uniform homeotropic LC alignment characteristics of FSAMs showed the possibility of FSAMs as an LC alignment layers.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.128-132
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• 2016

We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.837-842
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• 2003

In ab initio molecular dynamics, whenever information about the potential energy surface is needed for integrating the equations of motion, it is computed “on the fly” using electronic structure calculations. For Born-Oppenheimer methods, the electronic structure calculations are converged, whereas in the extended Lagrangian approach the electronic structure is propagated along with the nuclei. Some recent advances for both approaches are discussed.

• Bulletin of the Korean Chemical Society
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• v.17 no.1
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• pp.43-45
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• 1996

Structural and electronic properties of an alkali metal fulleride, Rb1C60, was studied. In spite of the chain structure with shortdistance between balls along the crystallographic a-direction, the electronic structure calculation study with the X-ray defined crystal structure shows that Rb1C60 is a three-dimensional metal at room temperature. This result is different from the magnetic experiments in which the compound was found to behave as a quasi-one-dimensional metal. Partial Fermi surface nesting is supposed to be the reason for the metal-insulator transition found in Rb1C60 at ∼50 K.

• Carbon letters
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• v.25
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• pp.84-88
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• 2018

At present, an important research area is the search for materials that are compatible with CMOS technology and achieve a satisfactory response rate and modulation efficiency. A strong local field of graphene surface plasmon polariton (SPP) can increase the interaction between light and graphene, reduce device size, and facilitate the integration of materials with CMOS. In this study, we design a new modulator of SPP-based cycle branch graphene waveguide. The structure comprises a primary waveguide of graphene-$LiNbO_3$-graphene, and a secondary cycle branch waveguide is etched on the surface of $LiNbO_3$. Part of the incident light in the primary waveguide enters the secondary waveguide, thus leading to a phase difference with the primary waveguide as reflected at the end of the branch and interaction coupling to enhance output light intensity. Through feature analysis, we discover that the area of the secondary waveguide shows significant localized fields and SPPs. Moreover, the cycle branch graphene waveguide can realize gain compensation, reduce transmission loss, and increase transmission distance. Numerical simulations show that the minimum effective mode field area is about $0.0130{\lambda}^2$, the gain coefficient is about $700cm^{-1}$, and the quality factor can reach 150. The structure can realize the mode field limits of deep subwavelength and achieve a good comprehensive performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.136-136
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• 2013

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were conducted to track the coverage dependent variation of the absorption structure of 2-thiophenecarboxaldehyde (C4H3SCHO: TPCA) on the Ge(100) surface at room temperature. In an effort to identify the most probably adsorption structures on the Ge(100) surface, we deposited TPCA molecules at a low coverage and at a high coverage and compared the differences between the electronic features measured using HRPES. The HRPES data provided three possible adsorption structures of TPCA on the Ge(100) surfaces, and DFT calculations were used to determine the plausibility of the structures. HRPES analysis, corroborated by DFT calculations, indicated that an S-dative bonded structure was the most probable adsorption structure at relatively lower coverage levels, the [4+2] cycloaddition structure was the second most probable structure, and the [2+2]-C=O cycloaddition structure was the last probable structure on the Ge(100) surfaces at relatively higher coverage levels.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.11
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• pp.1-7
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• 2000

Surface wave scattering by periodic grooves of arbitrary profile in a grounded dielectric slab is investigated for the TE surface wave incidence. Both the finite and infinite periodic geometries are considered. The former case is analyzed by using of hybrid FEM/MOM and the latter by using of full MOM procedure. Some numerical results for the reflected and transmitted powers in a grounded dielectric slab, radiation power into the free space, and radiation patterns in case of finite structure and for the dispersion diagram in case of infinite structure are presented. And some descriptions on the relationship between the finite and infinite structure such as the maximum beam angle are given.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.331-334
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• 1998

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.