• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.198-201
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• 2005

Nickel amalgam was Prepared by the electro-deposition with mercury cathode in a modified Watts bath. Homogeneous nickel amalgam was obtained. The fluidity of the amalgam decreased gradually with increased nickel quantity and become solid finally. Nickel powders of sub-micron size were obtained by a distillation of mercury from the amalgam. The characterization of the nickel amalgam was studied by SEM and x-ray diffractometry.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.419-419
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• 2012

We fabricated the Polyamide 4,6 (PA46) thin film using Adipoyl chloride and 1,4-butadiamine. PA46 film was grown at $70^{\circ}C$ by Molecular Layer Deposition (MLD) method. MLD is sequential and self-terminating fabrication method for organic thin film. The growth rate of PA46 is $3.5{\acute{\AA}}$ cycle. The thickness of PA46 film was measured by Ellipsometer. Surface morphology of this film was investigated by Atomic Force Microscopy (AFM) and roughness is directly proportional to number of growing cycles.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.393-397
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• 2003

The effects of the composition and additives on the blackening and deposition rate of electroless Ni-Zn plating have been examined. Hydrazine resulted in lower sheet resistance of the deposit than sodium hypophosphite. Zinc concentration more than 15 wt% and small amount of ammonium sulfate in the deposits were needed in obtaining Ni-Zn deposit with a black color. An optimum condition was obtained for the black Ni-Zn deposit at an appreciable deposition rate.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.165-170
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• 1998

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.143-147
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• 2002

In this paper, we investigated the deposition condition of Bragg reflector formation that will be expected to play an important role in future FBAR device applications. The thin films were deposited using an RF/DC magnetron sputtering technique. The material characteristics such as deposition rates, grain structures and surface roughnesses of the deposited silicon dioxide (SiO$_2$) and tungsten (W) films were investigated for various deposition conditions. As a result, it was found that the deposition condition could significantly affect the material characteristics of the deposited films and also the optimization of the deposition process is essentially important to obtain the desirable Brags reflector structure consisted of high-quality in films.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.4711-4717
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• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.141-141
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• 2015

In this study, a series of hydroxyaptite (HAp) are produced on Ti dental implant using electrochemical deposition. Based on the preliminary analysis of the coating structure, composition and morphology. In vitro studies were performed with MC3T3-E1 cell to investigate the effect of biological change on different surface conditions.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.353-356
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• 2014

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electron-collecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.74-78
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• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.