• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.296-301
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under the thermal chemical vapor deposition system. A 304-type stainless steel was used as a substrate with nickel powders as the catalyst. The surface of the substrate was pretreated using a sand paper or a mechanical drill to enhance the production yield of the carbon coils. The characteristics of the deposited carbon nanomaterials on the substrates were investigated according to the surface state on the stainless steel substrate. The protrusion induced by the grooves on the substrate surface could enhance the formation of the carbon nanomaterials having the coils geometries. The cause for the enhancement of the carbon coils formation by the grooves was suggested and discussed with the surface energies for the interaction between as-growing carbon elements. Finally, we could obtain the massive production yield of the carbon coils by the surface pretreatment using SiC sand papers on the several tens grooved stainless steel substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.648-662
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• 1996

Electrode surface reaction on glassy carbon and synthesized graphite (PVDF mixed graphite) in sulfuric acid solution is investigated by impedance spectroscopy at cyclic polarization. The redox peak, which may be due to the change of chemical adsorped functional group on electrode surface or oxidation and reduction of oxygen, is represented on glassy carbon and graphite electrode in potentio-dynamic current curve. The oxidation and reduction of these surface functional group on glassy carbon and PVDF mixed graphite have a major affect on the impedance spectrum and Faraday impedance parameter at cyclic polarization.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.640-647
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• 1996

It has been found that an white precipitates at the inside surface is a common characteristics of soda-lime-silica glasses which have not undergone special surface treatments during hot weather season. In this study, the white deposits were examed using by solution method, surface analysis etc., and the dependence of weathering on the atmospheric condition was also investigated. As a results, the white precipitates on the glass surface was discorved as carbonates like $Na_2CO_3{\cdot}H_2O,CaCO_3$. Coming to atmosphere-dependence, it was shown that the glass made and stored at sea shore province had 3 times much severe weathering than that at land province.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.227-232
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• 1998

Diamond crystallization and discontinuous deposit phenomena depend on the process of hydrocarbon deposition, nucleation and growth. Then, it is investigated the concentration of methane, flow rate, structure and the growth process of $CH_4-H_2$ system in hot filament assisted C.V.D. There is a limited value of temperature, pressure, flow rate and the mole fraction of methane-hydrogen gas. Diamond nucleation occurs on substrate selectively and surface diffusion of species on the substrate plays an important role in the early stages of nucleation and growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.25-32
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• 2009

The glass-ceramics composed of coal bottom ash produced from a thermal power plant, $Na_{2}O$ and $Li_{2}O$ as a flux agent and $TiO_2$ as a nucleation agent were fabricated and its microstructures were analyzed. The nepheline was a major crystal phase in the glass-ceramics fabricated and its amount increased with $TiO_2$ addition. The glass-ceramics without $TiO_2$ addition had the thick surface crystals induced by a surface-crystallization mechanism and no crystal in the interior matrix. The surface crystallization, however, was restrained and the interior matrix was completely crystallized showing dendrite shape spread with fine particles < $1{\mu}m$ when added with $TiO_2$ above 4 wt%. For the glass-ceramics containing 6 wt% $TiO_2$, the $5{\mu}m$-long dendrite crystal; were interlocked each other which could suppress the crack propagation effectively at the external loading applied.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.494-496
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• 1996

The purpose of this study is to investigate the effect of process conditions on pore distribution in porous silicon layer prepared by electrochemical reaction. Porous silicon layers formed on p-type silicon wafer show the network structure of fine porse whose diameters are less than 100${\AA}$. In n-type porous silicon, selective growth was found on the pore surface by wet etching process after PR patterning. And numerical method showed high current density on the pore tip. With this result we confirmed that pore formation has two steps. First step is the initial attack on the surface and second step is the directional growth on the pore tip.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.505-510
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• 2004

The glass-ceramic based on LAS($Li_{2}O-Al_{2}O_3-SiO_{2}$) system was observed using SEM(Scanning Electric Microscopy) and AFM(Atomic Force Microscopy) and it was expected to get a correlation between the crystal size and the surface roughness through the result. At heat treatment conditions (the nucleation: $740\~800^{\circ}C$, the crystal growth: $900\~1150^{\circ}C$), the crystal size was increased from 72 to 450 nm so that the mean of surface roughness was also risen from 0.8 to 6.3 nm. Based on the results, the surface roughness of glass-ceramic is controlled by the factors, crystal size, crystallines, and the condition of heat treatment.