• Korean Journal of Materials Research
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• v.34 no.1
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• pp.55-62
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• 2024

Fluorine-doped tin oxide (FTO) has been used as a representative transparent conductive oxide (TCO) in various optoelectronic applications, including light emitting diodes, solar cells, photo-detectors, and electrochromic devices. The FTO plays an important role in providing electron transfer between active layers and external circuits while maintaining high transmittance in the devices. Herein, we report the effects of substrate rotation speed on the electrical and optical properties of FTO films during ultrasonic spray pyrolysis deposition (USPD). The substrate rotation speeds were adjusted to 2, 6, 10, and 14 rpm. As the substrate rotation speed increased from 2 to 14 rpm, the FTO films exhibited different film morphologies, including crystallite size, surface roughness, crystal texture, and film thickness. This FTO film engineering can be attributed to the variable nucleation and growth behaviors of FTO crystallites according to substrate rotation speeds during USPD. Among the FTO films with different substrate rotation speeds, the FTO film fabricated at 6 rpm showed the best optimized TCO characteristics when considering both electrical (sheet resistance of 13.73 Ω/□) and optical (average transmittance of 86.76 % at 400~700 nm) properties with a figure of merit (0.018 Ω^-1).

• Journal of the Mineralogical Society of Korea
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• v.28 no.1
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• pp.9-16
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• 2015

A mineralogical analysis on the factors affecting the luster of pearls was carried out using gravity measurement, optical microscope observation, X-ray diffraction analysis, and scanning electron microscopy. We divided the seawater cultured pearls from Tongyeong into the following four types based on luster and shape; good luster and round (LR), lackluster and round (LLR), lackluster and baroque (LLB), and lackluster and two nucleus (LTN) pearls. Pearls with high-quality luster had slightly lower specific gravity as compared to pearls with low-quality luster, but both these types of pearls are within the specific gravity range of commercial pearls. Regarding the cross-sectional thickness of the mother-of-pearl layer, LR pearls showed a uniform thickness of about 0.3 mm in average. On the other hand, LLR pearls were characterized by relatively thinner, but uniform thickness. LTN and LLB pearls showed a tendency of significantly large variation in thickness even within a single pearl. For the surface of pearls, pearls with high-quality luster showed narrower and clearer growth lines of aragonite crystals as compared to pearls with low-quality luster. Pearls with high-quality luster were characterized by fewer aragonite crystal lattice defects as compared to pearls with low-quality luster, and the former showed parallel arrangement, thinner thickness, and less difference in thickness on the surface and inside. If a pearl has a prismatic layer, it is composed of aragonite with calcite in the prismatic and nacreous layer, and calcite content is very high in the lackluster pearl. Pearls without a prismatic layer were devoid of calcite irrespective of their quality of luster, and were composed of aragonite.

• Journal of the Mineralogical Society of Korea
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• v.19 no.4 s.50
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• pp.239-246
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• 2006

KAERI Underground Research Tunnel (KURT) was recently constructed through the site investigation from the yea. of 2003 at KAERI site, Dukjin-dong, Yuseong-gu, Daejeon city. The geo-logic setting of the site has been slightly metamorphosed. There are small fractures developed in the rock and several kinds of secondary filling minerals exist in the fractures. We examined mineralogical characteristics of fracture-filling calcite, which is not only largely distributed, but also can significantly affect the radionuclides migration. The calcite is found along fractures like other secondary minerals, forming thick veins in part. Most calcite-filled fractures contain quartz, iron oxides, and dolomite as minor minerals. The calcite crystals show an characteristic appearance with an uniformly oriented growth, coated with goethite on the edge and the etch-pit sites of their surface. Some calcite crystals have been newly formed by the precipitation of elements dissolved from the tunnel shotcrete wall, and their morphology changed according to the chemistry and flow of groundwater. The calcite can modify the groundwater chemistry and significantly affect the sorption behavior of radionuclides. The characteristic crystal structure and surface morphology of the calcite examined in the KURT site will be used as important basic data for the radionuclide migration experiment in the future.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.115-115
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• 2018

철강재는 대량 생산이 가능하며 경제성이 뛰어나고 기계적 성질도 우수하므로 다양한 산업 분야에서 널리 사용되고 있다. 그러나 철강재는 부식 환경에 취약하기 때문에 그 용도에 따라 다양한 내식성을 부여하는 표면처리를 적용하고 있다. 일반적으로 이러한 철강 재료에 대한 내식성 표면처리로는 습식공정을 이용한 아연(Zn)도금 표면처리가 널리 적용되고 있다. 그러나 최근에는 이러한 습식공정으로 인해 발생하는 자원소모 및 환경적인 문제와 더불어 고내식성 표면처리 소재에 대한 수요가 증가함에 따라 이러한 단점을 극복할 수 있는 새로운 소재 및 기술 개발에 대한 관심이 증대되고 있다. 이러한 관점에서 기존의 습식표면처리 공정을 건식으로 대체 또는 병행하고, 현행 아연소재를 대체할 수 있는 코팅소재로써 알루미늄(Al) 이나 마그네슘(Mg)으로 대체하는 방법이 시도되고 있다. 본 연구에서는 강판의 내식성을 향상시키기 위한 방법으로 기존의 습식 표면처리 공정에서 용이하지 않은 마그네슘을 이용하여 건식 PVD 프로세스에 의해 코팅막의 제작을 시도하였다. 그리고 코팅막 제작 조건 중에서 공정압력이 코팅막의 결정배향성에 미치는 영향과 내식성과의 상관관계를 규명하고자 하였다. 즉, 여기서는 강판 및 용융알루미늄 도금강판 상에 스퍼터링법에 의해 Ar 가스에 의한 공정압력을 2, 10 및 50 mTorr로 조절하면서 마그네슘 코팅막을 $2{\mu}m$ 두께로 각각 제작하였다. 이때 제작한 막의 표면 모폴로지 관찰(SEM) 및 결정구조 분석(XRD) 결과에 의하면, 강판 및 용융알루미늄도금강판 상에 제작한 코팅막들은 공통적으로 공정압력이 증가할수록 그모폴로지의 결정립의 크기가 작고 치밀한 구조로 변하였다. 또한 그때 형성된 코팅막의 결정구조는 표면에너지가 상대적으로 높은 Mg(002)면 피크의 점유율이 감소하고 표면에너지가 낮은 Mg(101)면 피크의 점유율이 증가하는 경향을 나타내었다. 그리고 공정압력이 증가할수록 Mg 격자 간 면 간격(d-value)이 증가하는 경향을 나타내었다. 이상에서 제작한 마그네슘 코팅막의 결정성장 과정은 본 진공 플라즈마 PVD 공정중 증착가 더불어 흡착역할을 하는 Ar의 움직임에 따라 설명 가능하였다[1,2]. 코팅막의 양극분극(Polarization)측정 결과에 의하면, 공정압력이 높은 조건에서 제작한 막일수록 부동태 특성이 우수하여 내식성이 향상되는 경향을 나타내었다. 특히, 공정압력이 상대적으로 높은 50 mTorr 조건에서 제작된 코팅막이 표면 마그네슘 결정의 크기가 조밀하고 결정구조는 Mg(002)면과 Mg(101)면의 상대강도 비가 유사하여 내식성 가장 우수하였다.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Composites Research
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• v.31 no.2
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• pp.43-50
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• 2018

The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.721-727
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• 2002

In order to overcome trade-off among compositions, process and properties of the glasses with high PbO-base composition for PDP Rib, we studied glass crystallization and crystallization kinetics by Differential Thermal Analysis(DTA). Glass powder was obtained through melting/cooling/grinding, with 3 wt%TiO2 addition for the crystal nucleation and growth in $62PbO-19B_2O_3-10SiO_2-9(Al_2O_3-K_2O-BaO-ZnO)$(in wt%) composition glass. This powder was heat-treated for 1 to 10 h at $445^{\circ}C$ for nucleation. DTA measurements were performed to obtain the crystallization peak with $5∼25^{\circ}C/min$ heating rates. DTA crystallization peak temperature increased with increasing the heating rate and decreased with increasing the heating time. Because the Avrami parameter (n) was approximately 1, the surface crystallization occurred. The maximum nucleation time was 2 h.

• Resources Recycling
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• v.18 no.4
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• pp.24-30
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• 2009

Rare earth based calcium aluminate phosphor ($CaAl_2O_4:Eu^{2+}$, $Nd^{3+}$) supported $TiO_2$ nanoparticles are synthesized by using sol-gel method, which are further characterized using powder X-ray diffraction (XRD), fourier transform infrared (FT-IR), diffuse reflectance UV-Visible spectroscopy (DRS UV-Vis) and transmission electron microscopy (TEM). The XRD pattern of as-prepared and sintered phosphor supported $TiO_2$ does not show the tendency to change the crystal structure from anatase to rutile phase up to $600^{\circ}C$. This indicates that the phosphor support might inhibit the densification and crystallite growth by providing dissimilar boundaries. The diffuse reflectance spectral (DRS) measurements showed shift towards longer wavelength indicating reduction in the band-gap energy as compared to free $TiO_2$. The FT-IR spectra of phosphor supported $TiO_2$ nanoparticles show shift in the peak positions to lower wavelengths. This indicates that the $TiO_2$ nanoparticles are not free, but covalently bonded to the phosphor support. TEM micrographs show presence of crystalline and spherical $TiO_2$ nanoparticles (8 - 15 nm diameter) dispersed uniformly on the surface of phosphor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.1042-1045
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• 2005

The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.