• 한국환경농학회지
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• 제41권4호
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• pp.230-235
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• 2022

BACKGROUND: Ammonia gas emitted from nitrogen fertilizers applied in agricultural land is an environmental pollutant that catalyzes the formation of fine particulate matter (PM2.5). A significant portion (12-18%) of nitrogen fertilizer input for crop cultivation is emitted to the atmosphere as ammonia gas, a loss form of nitrogen fertilizer in agricultural land. The widely practiced method for fertilizer use in agricultural fields involves spraying the fertilizers on the surface of farmlands and mixing those with the soils through such means as rotary work. To test the potential reduction of ammonia emission by nitrogen fertilizers from the soil surface, we have added N, P, and K at 2 g each to the glass greenhouse soil, and the ammonia emission was analyzed. METHODS AND RESULTS: The treatment consisted of non-fertilization, surface spray (conventional fertilization), and soil depth spray at 10, 15, 20, 25, and 30 cm. Ammonia was collected using a self-manufactured vertical wind tunnel chamber, and it was quantified by the indophenol-blue method. As a result of analyzing ammonia emission after fertilizer treatments by soil depth, ammonia was emitted by the surface spray treatment immediately after spraying the fertilizer in the paddy soil, with no ammonia emission occurring at a soil depth of 10 cm to 30 cm. In the upland soil, ammonia was emitted by the surface spray treatment after 2 days of treatment, and there was no ammonia emission at a soil depth of 15 cm to 30 cm. Lettuce and Chinese cabbage treated with fertilizer at depths of 20 cm and 30 cm showed increases of fresh weight and nutrient and potassium contents. CONCLUSION(S): In conclusion, rather than the current fertilization method of spraying and mixing the fertilizers on the soil surface, deep placement of the nitrogen fertilizer in the soil at 10 cm or more in paddy fields and 15 cm or more in upland fields was considered as a better fertilization method to reduce ammonia emission.

• 한국환경농학회지
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• 제28권1호
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• pp.15-19
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• 2009

대기중으로 휘산되는 대부분의 암모니아는 농경지에서 시용하는 가축분뇨 퇴비와 질소비료에서 유래한다. 본 연구는 밭 토양에서 돈분 퇴비 시용방법에 따른 암모니아 휘산량을 소형원드터널 방법을 이용해서 정량적으로 평가하였다. 돈분 퇴비(20 Mg/ha) 표층살포(SA), 표층살포 후 즉시 경운(IRA), 표층 살포 3일 후 경운(RA-3d) 처리의 13일 동안 암모니아 휘산량은 각각 28.7, 8.7, 24.3 kg N/ha로 IRA 처리구는 SA 처리구에 비해 70% 저감효과를 가져왔다. 그리고 SA 처리구의 퇴비 처리 후 24시간 이내 휘산된 암모니아 양은 총 휘산량의 61%로 대부분의 암모니아는 시용 초기 짧은 시간 내에 휘산됨을 알 수 있었다. 석회와 퇴비 혼용시용 후 교반(L+C mix), 퇴비표층 살포 3일후 석회시용 교반(C+L3D), 석회시용 3일 후 퇴비시용 교반(L+C3D) 처리구의 22일 동안 총 암모니아 휘산량은 각각 40.1, 31.4, 27.7 kg/ha이었다. 따라서 가축분 퇴비 시용시 석회를 혼용하는 것은 피해야 하며, 만일 동일 작기내 시용이 불가피할 경우는 퇴비시용에 앞서 석회를 먼저 충분한 일수를 앞두고 시용하는 것이 암모니아 휘산량을 저감시킬 수 있다는 결론을 얻었다.

• 한국표면공학회지
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• 제29권6호
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• pp.728-734
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• 1996

To obtain the relation in the electrochemical reduction of $CO_2$ in aqueous $KHCO_3$ colution between an activity for the product and the nature of Cu electrode, the electrode surface was characterized by using two methods: X-ray photoelectron spectroscopy (XPS) and photoelectron emission (PE) measurement. Electrolyses were performed with Cu electrodes pretreated in several ways. The distribution of the products changed drastically with electrolysis time and the pretreatment method. The features in XPS spectra were closely connected with the product distribution. The oxide film at the electrode surface was gradually reduced to bare Cu metal with electrolysis time, resulting in a variation of the product distribution. PE was measured by verying the wavelength of incident light at several temperatures. The dependence of PE on the measurement temperature changed greatly before and after electrolysis.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.115-119
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• 1996

An estimation of surface roughness value is a very important and difficult issue in grinding process. The definition of the D.A.R.F(Dimensionless Average Roughness Factor) has been made including the absolute average and tile standard deviation that are the parameters of the AE(Acoustic Emission) sign. The theoretical equation of the surface roughness applying the D.A.R.F has been derived from the regressive analysis and specified with respect to the availability through the experimental approach on the machine.

• 대한조선학회논문집
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• 제44권1호
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• pp.40-47
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• 2007

This study is focused on developing a software that predicts the temperature distribution and infrared Emission from 30 objects considering the solar radiation through the atmosphere. The solar radiation through the atmosphere is modeled by using the well-known LOWTRAN7 code. Surface temperature information is essential for generating the infrared scene of the object. Predictions of the transient surface temperature and the infrared emission from a naval ship by using the software developed here show fairly good results by representing the typical temperature and emitted radiance distributions expected for the naval ship considered in mid latitude. Emissivity of each material is appeared to be an important parameter for recognizing the target in Infrared band region. The numerical results also show that the low emissivity surface on the heat source can be helpful in reducing the IR image contrast as compared to the background sea.

• 한국진공학회지
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• 제11권2호
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• pp.108-112
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• 2002

AC 플라즈마 디스플레이 패널의 보호막으로 널리 사용되고 있는 MgO막의 2차 전자 방출계수를 저에너지 불활성 기체이온에 대해 펄스 이온빔 기법으로 측정하였다. 실리콘 산화막의 헬륨이온에 의한 2차 전자 방출계수는 300 eV에서 0.82를 보였지만 50 eV에서는 0.22보여 운동에너지에 대한 상당한 의존성을 보였다. 한편, MgO막의 이차전자 방출계수는 이온에 의한 스퍼터링이 지속됨에 따라 0.62에서 0.3으로 감소함으로써 이온충돌이 MgO의 이차전자 방출계수에 상당한 영향을 미치는 것을 확인할 수 있었다.

• Journal of the Optical Society of Korea
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• 제18권5호
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• pp.582-588
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• 2014

We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

• 천문학회보
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• 제38권1호
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• pp.59.2-59.2
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• 2013

Wilson and Bappu found a tight correlation between the stellar absolute visual magnitude (MV) and the width of the Ca II K emission line for late-type stars in 1957. Here, we revisit the Wilson-Bappu relationship (hereafter, WBR) to claim that WBR can be an excellent indicator of stellar surface gravity of late-type stars as well as a distance indicator. We have measured the width (W) of the Ca II K emission line in high resolution spectra of 125 late-type stars, which were obtained with Bohyunsan Optical Echelle Spectrograph (BOES) and adopted from the UVES archive. Based on our measurement of the emission line width (W), we have obtained a WBR of $M_V=33.76-18.00{\log}W$. In order to extend the WBR to be a surface gravity indicator, the stellar atmospheric parameters such as effective temperature ($T_{eff}$), surface gravity (logg), metallicity ([Fe/H]), and micro-turbulence (${\xi}_{tur}$) have been derived from the self-consistent detailed analysis using the Kurucz stellar atmospheric model and the abundance analysis code, MOOG. Using these stellar parameters and logW, we found that ${\log}g=-5.85\;{\log}W+9.97\;{\log}T_{eff}-23.48$ for late-type stars.

• 한국표면공학회지
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• 제49권3호
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.