• Journal of Electrochemical Science and Technology
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• 제7권1호
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• pp.82-89
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• 2016

In this work, a ruthenium dioxide electrode has been prepared by thermal decomposition at 400 ℃ then used for the oxidation of commercial amoxicillin. The physical characterization showed that RuO₂ electrode presents a mud cracked structure. Its electrochemical characterization has revealed an increase of the voltammetric charge in acid electrolyte compared to neutral electrolyte indicating the importance of protons in its surface redox processes. The voltammetric study of the oxidation of amoxicillin has been investigated. It has been obtained that the oxidation of amoxicillin is controlled by both adsorption and diffusion processes. Moreover, the oxidation of amoxicillin occurs via direct and indirect processes in free or electrolyte containing chlorides. Through preparative electrolysis, enhancement of amoxicillin oxidation was observed in the presence of chloride where the amoxicillin degradation yield reached more than 50 % compared to less than 5% in the absence of chlorides. Spectrophotometric investigations have revealed the degradation of intermediates absorbing at 350 nm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1291-1292
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• 2008

ITO is widely used as an anode material in OLED, because of its good transparency, low electrical resistivity, high work function, and efficient hole injection properties. The interface between the electrode and the organic layer in the OLED effects the charge injection process and may influence the electrical and the luminance properties. Surface treatment of ITO, such as an Aquaregia treatment has been shown to enhance the efficiency, and luminance characteristics of the OLED. In this study, we investigated the effect of Aquaregia treatment. The fundamental structures of the OLED were ITO/NPB/$Alq_3$/LiF/Al. The current density-voltage-luminance, efficiency, and lifetime characteristics were measured with untreated and Aquaregia-treated ITO substrates. The Aquaregia treatment was found to enhance the performance of OLED. For the Aquaregia treated device, the maximum luminance and efficiency were increased by about 2 times compared to the untreated device. The mechanism of the Aquaregia treatment is discussed based on AFM analyses.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Macromolecular Research
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• 제17권7호
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• pp.483-490
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• 2009

Stable poly(styrene-co-divinylbenzene) [P(St-co-DVB)] micro spheres with narrow size distribution were synthesized in the presence of 2,2'-azobis(2,4-dimethyl valeronitrile) (V-65) and co-initiator in an acetone/water mixture in the precipitation polymerization at $53^{\circ}C$ for 24 h. Potassium peroxodisulfate (KPS), ammonium peroxodisulfate (APS) and sodium peroxodisulfate (NaPS) were used as co-initiators. The optimum ratio of acetone to water for the formation of a narrow distribution of P(St-co-DVB) particles was 49:11 (g/g). The optimum co-initiator compositions for narrow distribution were 9:1 (g/g) for V-65 to KPS, 11:1 for V-65 to APS and 6:1 for V-65 to NaPS. The yield for these compositions was $54{\sim}57%$ and the largest particle size was obtained with the lowest zeta-potential and CV values. From the XPS measurements, the charge density was increased but the zeta potential decreased with increasing sulfur content, implying that the sulfate group provides the electrostatic stabilization on the particle surface. This suggested that the self-crosslinking between styrene and DVB, the electrostatic stabilization of initiators, and the balanced hydrophobic and hydrophilic properties of the solvents are responsible for the formation of stable P(St-co-DVB) spherical particles with narrow size distribution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.296-296
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• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.423-428
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• 2009

The comparative study of three calix[4]heterocycles (calix[4]pyrrole, calix[4]furan, and calix[4]thiophene) has been theoretically performed by using high-level density functional theory (DFT) at the MPWB1K/6-311G$^{**}$//B3LYP/6- 311G$^{**}$ level. The effect of different hetero-atoms (nitrogen, oxygen, and sulfur) placed in the heterocycles on the conformational flexibility, thermodynamic stability order, cavity sizes, charge distributions, and binding propensities are examined. The thermodynamic stability differences between the conformers are found to be much greater in calix[4]pyrrole compared to those in calix[4]furan and calix[4]thiophene. Relatively larger NH group and higher dipole of a pyrrole ring in calix[4]pyrrole contribute to the higher energy barrier for the conformational conversions and relatively rigid potential energy surface compared to the case of calix[4]furan and calix[4]thiophene. The computational results herein provide theoretical understanding of the conformational flexibility and the thermodynamic nature which can be applied to understand the complexation behavior of the three calix[4]heterocycles.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

• Corrosion Science and Technology
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• 제6권1호
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• pp.7-11
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• 2007

In this study, new evaluation method for the stability and corrosion resistance properties of passive films has been suggested by means of observation of self-activation process in open-circuit state and galvanostatic nanoscale reduction test. The experiments were performed for air-formed oxide film in case of plain carbon steel, and for anodically passivated films formed in aqueous sulfuric acid solutions in case of titanium and 304 stainless steel. From these experimental results, we derived two parameters, $i_{0}$ and $q_{0}$, which characterize the self-activation process and the properties of passive film on a stainless steel surface. The parameter $i_{0}$ was defined as the rate of self-activation, and $q_{0}$, the reduced amount of charge during the self-activation process. In conclusion, it is considered that the stability and corrosion resistance of passive metals and alloys can be evaluated quantitatively by three parameters of $\tau_{0}$, $q_{0}$, and $i_{0}$, which easily obtain by means of observing the self-activation process and galvanostatic nanoscale reduction test.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.