• Title/Summary/Keyword: Surface Area of Plasma

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A Study on the NOx Removal in Multiple Plasma/Catalyst Combined Reactor (플라즈마/촉매 복합 다단 반응기를 이용한 NOx 저감)

  • 문승현;전상구
    • Transactions of the Korean Society of Automotive Engineers
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    • v.12 no.3
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    • pp.83-90
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    • 2004
  • Plasma/catalyst combined reactor was designed to overcome the limits of plasma and catalyst technologies. Optimum reductant and catalyst was selected from screening test. Experiments about the concentrations of reactant and $H_2O$ and the effect of temperature were carried out. Hydrocarbons with double bond such as propylene and so on were more reactive than any other reductants in plasma/catalyst condition. Photocatalyst, especially hombikat >$TiO_2$ with the largest surface area among the catalysts tested, showed the highest DeNOx efficiency in plasma/catalyst reaction. As the concentration of $H_2O$ increased, the removal of NO was enhanced. The increased concentration of >$O_2$ promoted the reaction of NO which was oxidized to$NO_2$.

Plasma Impedance Monitoring with Real-time Cluster Analysis for RF Plasma Etching Endpoint Detection of Dielectric Layers

  • Jang, Hae-Gyu;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.123.2-123.2
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    • 2013
  • Etching endpoint detection with plasma impedance monitoring (PIM) is demonstrated for small area dielectric layers inductive coupled plasma etching. The endpoint is determined by the impedance harmonic signals variation from the I-V monitoring system. Measuring plasma impedance has been examined as a relatively simple method of detecting variations in plasma and surface conditions without contamination at low cost. Cluster analysis algorithm is modified and applied to real-time endpoint detection for sensitivity enhancement in this work. For verification, the detected endpoint by PIM and real-time cluster analysis is compared with widely used optical emission spectroscopy (OES) signals. The proposed technique shows clear improvement of sensitivity with significant noise reduction when it is compared with OES signals. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as end point detection.

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Surface Modification and Fibrovascular Ingrowth of Porous Polyethylene Anophthalmic Implants

  • Yang, Hee-Seok;Park, Kwi-Deok;Son, Jun-Sik;Kim, Jae-Jin;Han, Dong-Keun;Park, Byung-Woo;Baek, Se-Hyun
    • Macromolecular Research
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    • v.15 no.3
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    • pp.256-262
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    • 2007
  • The purpose of this study was to determine the effect of surface modification on the fibrovascular ingrowth into porous polyethylene (PE) spheres ($Medpor^{(R)}$), which are used as an anophthalmic socket implant material. To make the inert, hydrophobic PE surface hydrophilic, nonporous PE film and porous PE spheres were subjected to plasma treatment and in situ acrylic acid (AA) grafting followed by the immobilization of arginine-glycine-aspartic acid (RGD) peptide. The surface-modified PE was evaluated by performing surface analyses and tested for fibroblast adhesion and proliferation in vitro. In addition, the porous PE implants were inserted for up to 3 weeks in the abdominal area of rabbits and, after their retrieval, the level of fibrovascular ingrowth within the implants was assessed in vivo. As compared to the unmodified PE control, a significant increase in the hydrophilicity of both the AA-grafted (PE-g-PAA) and RGD-immobilized PE (PE-g-RGD) was observed by the measurement of the water contact angle. The cell adhesion at 72 h was most notable in the PE-g-RGD, followed by the PE-g-PAA and PE control. There was no significant difference between the two modified surfaces. When the cross-sectional area of tissue ingrowth in vivo was evaluated, the area of fibrovascularization was the largest with PE-g-RGD. The results of immunostaining of CD31, which is indicative of the degree of vascularization, showed that the RGD-immobilized surface could elicit more widespread fibrovascularization within the porous PE implants. This work demonstrates that the present surface modifications, viz. hydrophilic AA grafting and RGD peptide immobilization, can be very effective in inducing fibrovascular ingrowth into porous PE implants.

Preparation and Reaction Studies of $Pt/Al_2O_3$ Model Catalysts

  • Kim, Chang-Min;Gabor A. Somorjai
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.414-419
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    • 1994
  • Surface of Pt/$Al_2O_3$ model catalyst was produced on an aluminum foil with surface area of 1 $cm^2$ The aluminum surface was oxidized under $10 ^5Torr$Torr oxygen and platinum was deposited on top of the oxide layer using a plasma evaporation source. Conversion of I-butene was performed on the model catalyst surface. Isomerization was the major reaction in I-butene conversion on the aluminum oxide layer. Addition of Pt on the aluminum oxide layer induces hydrogenation of I-butene. Selectivity for the hydrogenation increases as the amount of Pt on alumina increases.

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Electro-Chemical Properties of Iridium Oxide Coated Ti Electrode Synthesized by Unbalanced Magnetron Sputtering Process (비대칭 마크네트론 스퍼터링을 이용한 이리듐 산화물 박막의 합성과 전기 화학적 특성분석)

  • Kim, Sung-Dae;Kim, Sang-Sik;Song, Jin-Ho
    • Journal of the Korean institute of surface engineering
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    • v.40 no.5
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    • pp.203-208
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    • 2007
  • Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

A study on the microstructure change during the welding of a cast iron with a Fe-Mn-Al steel powder (주철과 Fe-Mn-Al강 이종금속 용접부의 조직변화에 관한 연구)

  • 김경중;서정현
    • Journal of Welding and Joining
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    • v.8 no.4
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    • pp.35-45
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    • 1990
  • Casting are widely used nodays as complicated and diversified forming materials due to its superior castability. However the welding of cast iron has not been accompaniced satisfactory resulting in an microstructure change happened in the heat affected zone (HAZ), especially the graphite are formed and shaped consecutively in the area and it has great impact on the crack occuring and growth together with martensite forming in this area. It case of gray cast iron welding, it is required for pre-heat treatment or specific welding consumables to restrain forming the martensite in the HAZ. In this study, by applying the plasma surface overlaid welding. Fe-Mn-Al steel powder has been used for improvement of anti-crackability in the HAZ and much attention has been paid to establish the overlaid welding method for gray cast iron so that optimum welding conditions may prevent the cracking. With our experiments, we have found that to prevent defects which may occur in the HAZ, the overlaid welding technique for gray cast iron has been developed.

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A study on Silicon dry Etching for Solar Cell Fabrication Using Hollow Cathode Plasma System (태양전지 제작을 위한 Hollow Cathode Plasma System의 실리콘 건식식각에 관한 연구)

  • ;Suresh Kumar Dhungel
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.62-66
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    • 2004
  • This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

Characterization and Construction of Chemical Vapor Deposition by using Plasma (rf 플라즈마 화학기상증착기의 제작 및 특성)

  • 김경례;김용진;현준원;이기호;노승정;최병구
    • Journal of the Korean institute of surface engineering
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    • v.33 no.2
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    • pp.69-76
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    • 2000
  • The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

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Influence of a Magnetic Field on High voltage Discharge Plasma Area for Carbon Nitride Film Deposition (질환탄소 박막 증착 시 고전압 방전 플라즈마에 가한 자장의 영향)

  • 김종일;배선기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.184-189
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    • 2002
  • Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

Plasma Uniformity Numerical Modeling of Geometrical Structure for 450 mm Wafer Process System (450 mm 웨이퍼 공정용 System의 기하학적 구조에 따른 플라즈마 균일도 모델링 분석)

  • Yang, Won-Kyun;Joo, Jung-Hoon
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.190-198
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    • 2010
  • Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.