• 한국자동차공학회논문집
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• 제12권3호
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• pp.83-90
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• 2004

Plasma/catalyst combined reactor was designed to overcome the limits of plasma and catalyst technologies. Optimum reductant and catalyst was selected from screening test. Experiments about the concentrations of reactant and $H_2O$ and the effect of temperature were carried out. Hydrocarbons with double bond such as propylene and so on were more reactive than any other reductants in plasma/catalyst condition. Photocatalyst, especially hombikat >$TiO_2$ with the largest surface area among the catalysts tested, showed the highest DeNOx efficiency in plasma/catalyst reaction. As the concentration of $H_2O$ increased, the removal of NO was enhanced. The increased concentration of >$O_2$ promoted the reaction of NO which was oxidized to$NO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.123.2-123.2
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• 2013

Etching endpoint detection with plasma impedance monitoring (PIM) is demonstrated for small area dielectric layers inductive coupled plasma etching. The endpoint is determined by the impedance harmonic signals variation from the I-V monitoring system. Measuring plasma impedance has been examined as a relatively simple method of detecting variations in plasma and surface conditions without contamination at low cost. Cluster analysis algorithm is modified and applied to real-time endpoint detection for sensitivity enhancement in this work. For verification, the detected endpoint by PIM and real-time cluster analysis is compared with widely used optical emission spectroscopy (OES) signals. The proposed technique shows clear improvement of sensitivity with significant noise reduction when it is compared with OES signals. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as end point detection.

• Macromolecular Research
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• 제15권3호
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• pp.256-262
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• 2007

The purpose of this study was to determine the effect of surface modification on the fibrovascular ingrowth into porous polyethylene (PE) spheres ($Medpor^{(R)}$), which are used as an anophthalmic socket implant material. To make the inert, hydrophobic PE surface hydrophilic, nonporous PE film and porous PE spheres were subjected to plasma treatment and in situ acrylic acid (AA) grafting followed by the immobilization of arginine-glycine-aspartic acid (RGD) peptide. The surface-modified PE was evaluated by performing surface analyses and tested for fibroblast adhesion and proliferation in vitro. In addition, the porous PE implants were inserted for up to 3 weeks in the abdominal area of rabbits and, after their retrieval, the level of fibrovascular ingrowth within the implants was assessed in vivo. As compared to the unmodified PE control, a significant increase in the hydrophilicity of both the AA-grafted (PE-g-PAA) and RGD-immobilized PE (PE-g-RGD) was observed by the measurement of the water contact angle. The cell adhesion at 72 h was most notable in the PE-g-RGD, followed by the PE-g-PAA and PE control. There was no significant difference between the two modified surfaces. When the cross-sectional area of tissue ingrowth in vivo was evaluated, the area of fibrovascularization was the largest with PE-g-RGD. The results of immunostaining of CD31, which is indicative of the degree of vascularization, showed that the RGD-immobilized surface could elicit more widespread fibrovascularization within the porous PE implants. This work demonstrates that the present surface modifications, viz. hydrophilic AA grafting and RGD peptide immobilization, can be very effective in inducing fibrovascular ingrowth into porous PE implants.

• 한국진공학회지
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• 제3권4호
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• pp.414-419
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• 1994

알루미늄 박편 위에 Pt/$Al_2O_3$ 모델 촉매를 만들었다. 알루미늄 표면을 $10 ^5Torr$의 산소 압력 하에서 산화시킨후 plasma evaporation source를 사용하여 Pt을 증착시켰다. 이 모델 촉매 표면에서 일 어나는 1-butene 의 반응을 연구하였다. 산화알루미늄 표면에서는 이성질화 반응이 일어 났으나 Pt을 증착시킨 산화알루미늄 표면에서는 수소첨가반응이 일어남이 관찰되었다. 알루미나 표면의 Pt이 증가함 에 따라 수소첨가반응으로서 선택성이 증가되었다.

• 한국표면공학회지
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• 제40권5호
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• pp.203-208
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• 2007

Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

• Journal of Welding and Joining
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• 제8권4호
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• pp.35-45
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• 1990

Casting are widely used nodays as complicated and diversified forming materials due to its superior castability. However the welding of cast iron has not been accompaniced satisfactory resulting in an microstructure change happened in the heat affected zone (HAZ), especially the graphite are formed and shaped consecutively in the area and it has great impact on the crack occuring and growth together with martensite forming in this area. It case of gray cast iron welding, it is required for pre-heat treatment or specific welding consumables to restrain forming the martensite in the HAZ. In this study, by applying the plasma surface overlaid welding. Fe-Mn-Al steel powder has been used for improvement of anti-crackability in the HAZ and much attention has been paid to establish the overlaid welding method for gray cast iron so that optimum welding conditions may prevent the cracking. With our experiments, we have found that to prevent defects which may occur in the HAZ, the overlaid welding technique for gray cast iron has been developed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• 한국표면공학회지
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• 제33권2호
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• pp.69-76
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• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• 한국진공학회지
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• 제19권3호
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• pp.190-198
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• 2010

450 mm의 웨이퍼 공정용 플라즈마 장비의 개발을 위하여 안테나 형상, 챔버의 직경, 웨이퍼까지의 거리에 따른 플라즈마 균일도를 Ar과 $CF_4$에 대하여 축대칭 2차원으로 수치 모델링하였다. 챔버의 종횡비를 직경, 기판까지의 거리, 배기구의 면적으로 나누어서 결정하고 여기에 안테나 구조를 변경하여서 최적의 플라즈마 균일도를 갖는 조건을 도출하였다. Drift diffusion식과 준중성 조건을 이용한 간략화를 이용하였으며 표면 재결합과 식각 반응을 이온에너지의 함수로 처리하였다. 반응기판 표면에서의 플라즈마 밀도 균일도는 기판 홀더와 챔버 벽면과의 거리, 기판과 소스와의 거리가 멀수록 좋아졌으며, 안테나의 디자인이 4 turn으로 1층인 경우, 두 번째, 네 번째 turn만 사용하여 전류비 1 : 4에서 기판표면에서의 플라즈마 균일도를 4.7%까지 낮출 수 있었다. Ar과 $CF_4$의 반경 방향으로 전자 온도 균일도 50%, 전자 밀도 균일도 19%의 차이가 있었다.