• Journal of electromagnetic engineering and science
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• 제17권3호
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• pp.153-158
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• 2017

This work reports on the effect of plasma area on the frequency characteristics of the monostatic radar cross section (RCS) of a square metallic plate. A dielectric barrier discharge (DBD) plasma actuator consisting of 10 rings is proposed. The actuator is fabricated in three different configurations such that only three inner rings, seven inner rings, and all rings can be biased. By applying an 18-kV bias at 1 kHz, the three types of DBD actuators generate plasma with a total area of 16.96, 36.74, and $53.69cm^2$, respectively, in a ring or circular form. The experimental results reveal that when the DBD actuator is placed in front of a $20mm{\times}20cm$ conducting plate, the monostatic RCS is reduced by as much as 18.5 dB in the range of 9.41-11.65 GHz. Furthermore, by generating the plasma and changing the area, the frequency of maximum reduction in the monostatic RCS of the plate can be controlled. The frequency is reduced by nearly 20% in the X band when all rings are biased. Finally, an electromagnetic model of the plasma is obtained by comparing the experimental and full-wave simulated results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.697-698
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• 2010

• 대한전기학회논문지
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• 제41권9호
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• pp.1085-1094
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• 1992

A variable-spacing cesium thermionic energy conversion test station is designed and fabricated for the study of power generation. The diode is in the form of a guard-ringed plane-parallel geometry in which a polycrystalline rhenium emitter of 2 cmS02T area faces a radiation-cooled polycrystalline rhenium collector of 1.9 cmS02T area. The emission of plasma from heated refractory electrode metal is the driving reaction in the direct conversion of heat to electricity by thermionic energy conversion. The plasma is produced from electrons and positive ions formed simultaneously by thermionic emission and surface ionization of cesium atoms incident on the hot emitter from the cesium vapor in the diode. And high plasma density causes plasma multiplication within the gap due to volume ionization that results in high power output. The variation of the saturation current of a Knudsen converter is investigated at an emitter-collector gap of 0.1 mm and an emitter temperatures. A maximum power output of 13.47 watta/cmS02T is observed at a collector temperature of 963 K and a cesium reservoir temperature of 603 K.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• 접착 및 계면
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• 제23권4호
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• pp.122-129
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• 2022

본 연구에서는 산소 플라즈마 처리시간을 실험 변수로 하여 금속섬유를 처리한 후 섬유표면에 산소함유 기능성 관능기를 도입하여 금속섬유의 친수성을 향상시키기 위한 연구로 플라즈마 처리 전, 후의 표면 특성 변화를 scanning electron microscope (SEM)과 x-ray photoelectron spectroscopy (XPS)를 사용하여 관찰하였다. 또한 플라즈마 처리시간이 금속섬유의 표면에 미치는 영향을 관찰하기 위해 극성 용매와 비극성 용매에 대한 금속섬유의 접촉각 변화를 측정하였다. 측정된 접촉각을 이용해 표면 자유에너지 변화를 계산한 후 산소 플라즈마 처리 전, 후의 금속섬유에 대한 접촉각과 표면 자유에너지를 비교하였으며 접착일과의 상관관계도 고찰하였다. 이런 금속섬유의 표면 변화가 다른 소재와의 복합 시 계면에서의 전단강도 향상에 미치는 영향을 알아보기 위해 microdroplet 시편을 제조하여 계면 전단강도를 측정하였으며 접착일과의 상관관계도 함께 파악하였다. 따라서, 금속섬유의 산소플라즈마 처리는 섬유표면에 물리적인 표면적 증가로 인한 수지와의 접촉면의 증가와 표면의 산소함유 기능성 관능기의 도입에 따른 접촉각, 표면 에너지의 변화에 따른 표면 친수화로 고분자 수지와의 계면 전단강도를 향상시켜주는 결과를 얻었다.

• 열처리공학회지
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• 제23권3호
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• pp.150-155
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• 2010

Generally, plasma nitriding process has composed with a nitriding layer within glow discharge region occurred by energy exchange. The dissociations of nitrogen molecules are very difficult to make neutral atoms or ionic nitrogen species via glow discharge area. However, the captured electrons in which a double-folded screen with same potential cathode can stimulate and come out some single atoms or activated ionic species. It was showed an important thing that is called "hat is a dominant component in this nitriding process?" in plasma nitriding process and it can take an effective species for without compound layer. During a plasma nitriding process, it was able to estimate with analyzing and identification by optical emission spectroscopy (OES) study. And then we can make comparative studies on the nitrogen transfer with plasma nitriding and ATONA process using plasma diagnosis and metallurgical observation. From these observations, we can understand role of active species of nitrogen, like N, $N^+$, ${N_2}^+$, ${N_2}^*$ and $NH_x$-radical, in bulk plasma of each process. And the same time, during DC plasma nitriding and other processes, the species of FeN atom or any ionic nitride species were not detected by OES analyzing.

• Advanced Composite Materials
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• 제17권2호
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• pp.167-175
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• 2008

Vapor grown carbon fibers (VGCF) were treated with atmospheric plasma enhancing the surface area in order to improve the bonding to the matrix in epoxy composites. The changes in the mechanical properties of VGCF/epoxy nanocompostes, such as tensile modulus and tensile strength were investigated in this study. VGCF with and without atmospheric plasma treatment for surface modification were used in this investigation. The interdependence of these properties on the VGCF contents and interfacial bonding between VGCF/epoxy matrix were discussed. The mechanical properties of atmospheric plasma treated (APT) VGCF/epoxy were compared with raw VGCF/epoxy. The tensile strength of APT VGCF/epoxy nanocomposites showed higher value than that of raw VGCF. The tensile strength was increased with atmospheric plasma treatment, due to better adhesion at VGCF/epoxy interface. The tensile modulus of raw VGCF and APT VGCF/epoxy matrix were of the similar value. The dispersion of the VGCF was investigated by scanning electron microscopy (SEM), SEM micrographs showed an excellent dispersion of VGCF in epoxy matrix by ultrasonic method.

• 한국결정성장학회지
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• 제16권5호
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.494-498
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• 2003

펜타센 유기박막트랜지스터(OTFT)에서 게이트 절연막의 표면상태가 소자의 성능에 큰 영향을 미친다. 본 논문에서는 펜타센을 진공 증착하기전 게이트 절연막의 표면에 O₂플라즈마 처리를 함으로써 OTFT의 성능에 미치는 영향을 분석하였다. O₂플라즈마 처리 후 소자의 전계 이동도가 0.05㎠/V·sec로 나타났으며, 이는 처리전 보다 약 10배정도 향상된 것이다. 또한 O₂플라즈마 처리는 게이트 절연막의 표면상태를 균일하게 하여 각 성능지수들의 표준편차가 감소하였다. 그리고 전계 이동도는 O₂플라즈마에 노출되는 시간에 따라 증가하였는데 5분을 기점으로 다시 감소하였다. 따라서 O₂플라즈마 처리시간은 5분이 최적인 것으로 판단된다.