• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.145-146
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• 2007

Dye-Sensitized Solar Cell Solar cells(DSSC) were appeared for overcoming global environmental problems and lack of fossil fuel problems. And it is one of study field that is getting into the spotlight lately because manufacturing method is more simple and inexpensive than existing silicon solar cells. Oxide semiconductor is used for adsorption of dye and electron transfer in DSSC study, and $TiO_2$ is used most usually. Overall light conversion efficiency is changed by several elements such as $TiO_2$ particle size and structure, pore size and shape. In this study, we report the solar cell performance of titania$(TiO_2)$ film electrodes with various particle sizes. $TiO_2$ particle size was 16 nm, 25 nm, and mixture of 16nm and 25 nm, and manufactured using Doctor blade method. When applied each $TiO_2$ film to DSSC, the best efficiency was found at 16nm of $TiO_2$ particle. 16nm of $TiO_2$ particle has the highest efficiency compared to the others, because particles with smaller diameters would adsorb more dye due to larger surface area. And in case of the mixture of 16nm and 25 nm, the surface area was smaller than expected. It is estimated that double layer is adsorbed a large amount of chemisorbed dye and improved light scattering leading due to efficiency concentration light than mono layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.575-579
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• 2023

In this work, pure W and W-0.5wt%HfC alloy (WHC05) were fabricated by sintering and hot-rolling following the same processing route. After exposing to a high flux deuterium plasma irradiation with the D⁺ flux to three fluences of 6.00 × 10²⁴, 2.70 × 10²⁵ and 7.02 × 10²⁵ D/m², the evolution of surface morphology, deuterium retention and hardening behaviors in pure W and WHC05 has been studied. The SEM results show the formation of D blisters on the irradiated area, and with the increase of D implantation, the size of these blisters increases from 200 ~ 500 nm (2.70 × 10²⁵ D/m²) to 1 ~ 2 ㎛ (7.02 × 10²⁵ D/m²) in WHC05 and from 1 ~ 2 ㎛ (2.70 × 10²⁵ D/m²) to > 3 ㎛ (7.02 × 10²⁵ D/m²) in pure W, respectively. A higher D retention and obvious hardening are observed in pure W than that of the WHC05 alloy, indicating an improve radiation resistance in WHC05 compared to pure W.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.160-166
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• 2019

In this study, oxygen functional groups were introduced on activated carbon fibers (ACFs) by oxygen plasma treatment to improve the adsorption performance on an acetic acid which is a sick house syndrome induced gas. The active species was generated more as the flow rate of the oxygen gas increased during the plasma treatment. For this reason, the specific surface area (SSA) of the ACFs decreased with much more physical and chemical etching. In particular, the SSA of the sample (A-O60) injected with an oxygen gas flow rate of 60 sccm was reduced to about $1.198m^2/g$, which was about 6.95% lower than that of the untreated samples. On the other hand, the oxygen content introduced into the surface of ACFs increased up to 35.87%. Also, the adsorption performance on the acetic acid gas of the oxygen plasma-treated ACFs was improved by up to 43% compared to that of using the untreated ACFs. It is attributed to the formation of the hydrogen bonding due to the dipole moments between acetic acid molecules and oxygen functional groups such as O=C-O introduced by the oxygen plasma treatment.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.351-355
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increased the reaction area of graphite electrodes used carbon nanotube (CNT) and porous carbon. CNT is limited to device utilization in order to used a metal catalyst by lack of surface area to improve. In contrast carbon nanowall (CNW) is chemically very stable. So this paper, microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow carbon nanowall (CNW) on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. To find the growth properties of CNW according to the reaction gas ratio, we have changed the methane to hydrogen gas ratios (4:1, 2:1, 1:2, and 1:4). The vertical and surficial conditions of the grown CNW according to the gas ratios were characterized by a field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy measurements showed structure variations.

• Journal of Space Technology and Applications
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• v.3 no.3
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• pp.239-256
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• 2023

The Earth's ionosphere is an area where part of the upper atmosphere is ionized and exists in a plasma state that affects radio waves. It is a field that has been studied for a long time as it directly affects real life in relation to communications. Depending on the altitude, it is divided into D, E, and F layers depending on the main ions that make up the electron density. The density of the neutral atmosphere is very large compared to the electron density, so it should be described as plasma taking that effect into account. It is an area where influences from outside the ionosphere are directly reflected, starting from the sun and extending to the earth's surface, and is a field that involves complex and diverse areas of research. In this paper, we explain the process by which the Earth's upper atmosphere is ionized to form the ionosphere and introduce the characteristics of the ionosphere at low and mid-latitudes. In addition, we introduce the research that domestic researchers have participated in related to the ionosphere to date and hope that it will be used to promote exchange in the field of ionospheric research in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.52 no.3
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• pp.247-255
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• 2019

This study was conducted to investigate the effects of extrusion pressure and particle size of feed ingredients on the growth performance and plasma hormone activity in juvenile olive flounder Paralichthys olivaceus. Experimental diets were prepared with extrusion pressure manipulated by screw speed [low pressure (LP), 885 rpm/min; high pressure (HP), 708 rpm/min] and different dietary particle sizes [specific surface area: small (SS), $169.9m^2/kg$; large (LS), $67.4m^2/kg$] in a two-level factorial design. Four experimental diets (LP+SS, LP+LS, HP+SS, and HP+LS) were randomly assigned to 12 tanks (3 replicates) stocked with 20 fish (initial weight, 57 g) per tank. After a 4-week feeding trial, the observable trends of the main effects of extrusion pressure and particle size on growth performance showed that LP and SS enhanced fish weight gain. The plasma insulin-like growth factor-I level was significantly higher in fish fed the LP+SS diet than in fish fed the HP+SS diet. These results indicate that manipulation of the physical qualities of feed through adjustment of extrusion pressure and feed ingredient particle size may influence the growth performance of juvenile olive flounder, which should be considered in feed manufacture.