• 대한전자공학회논문지
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• 제27권5호
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• pp.716-723
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• 1990

Transmission electron microscopy (TEM) and anger electron microscopy(AES) studies of GaAs/AlxGa1-xAs(x=0.58) quantum wells grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) are carried out. Isolated quantum well structure having the well width as small as 15 \ulcornerand multiquantum well structure, which consisted of 51 alternating layers with each thickness of 10\ulcorner were suscessfully grown. TEM analyses have shown that their interfaces were almost completely coherent without any structural disorder, alloy clustering and crystal defect. AES depth resolution have shown the compositional periodicity of superlattice structure.

• ETRI Journal
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• 제20권4호
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• pp.361-379
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• 1998

We present an improved transfer matrix algorithm which can be used in solving general n-band effective-mass $Schr{\ddot{o}}dinger$ equation for quantum well structures with arbitrary shaped potential profiles(where n specifies the number of bands explicitly included in the effective-mass equation). In the proposed algorithm, specific formulas are presented for the three-band (the conduction band and the two heavy- and light-hole bands) and two-band (the heavy- and light-hole bands) effective-mass eigensystems. Advantages of the present method can be taken in its simple and unified treatment for general $n{\times}n$ matrix envelope-function equations, which requires relatively smaller computation efforts as compared with existing methods of similar kind. As an illustration of application of the method, numerical computations are performed for a single GaAs/AlGaAs quantum well using both the two-band and three-band formulas. The results are compared with those obtained by the conventional variational procedure to assess the validity of the method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• 한국진공학회지
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• 제1권1호
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• pp.60-66
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• 1992

초격자와 다양자우물이 가질 수 있는 모든 구조에 대한 subband와 입자의 envelope 파동함수를 계산할 수 있는 방법을 제시하고 단순조성 초격자와 $\delta$-dopping 초격 자에 적용한 결과를 다른 방법의 계산결과와 비교하여 그 타당성을 검토하였다. 나아가서 기존의 방법에서 요구되었던 일정한 유효질량의 가정없이 graded gap 초격자에 적용하여 입자의 유효질량의 연속변화에 따른 subband 에너지와 파동함수를 계산하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.108-108
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.128-128
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• 2003

• 한국재료학회지
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• 제13권9호
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• pp.598-605
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• 2003

The optimized conditions for the cross-sectional TEM sample preparation using tripod polisher and ion-beam miller was confirmed by AFM and TEM. For the TEM observation of interfaces including InGaN layers like InGaN/GaN MQW structures, the sample preparation by the only tripod polishing was useful due to the reduction of artifacts. On the other hand, in case of the thick nitride films like ELO, PE, and superlattice, both tripod polishing and controlled ion-beam milling were required to improve the reproducibility. As a result, the ion-beam milling with the $60^{\circ}$modulation showed the minimum height difference between film and sapphire interface and the ion-beam milling of the $80^{\circ}$modulation showed the broad observable width.

• Applied Microscopy
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• 제27권3호
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• Bulletin of the Korean Chemical Society
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• 제32권10호
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• pp.3614-3617
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• 2011

A density functional theory method with the local basis set was employed to perform slab calculations to study thiolate-induced surface reconstruction structures of butylthiolates (ButS) with c($4{\times}2$) superlattice of the Au(111) surface. The slab calculations indicate that the most stable adsorption structure is the ButS-Au (adatom)-SBut complex form, which is in good agreement with the reported experiments and theoretical results for thiolates with shorter alkyl chains. The cis form of ButS-Au (adatom)-SBut motifs is preferred by 0.11 eV with respect to the trans form, and by 0.15 eV over the mixed cis-trans configurations due to the steric hindrance between adjacent butyl groups. It appears that the motif of Au adatom on the Au(111) surface is favored even for butylthiolate.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.146-147
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• 2005