• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2014

We report the growth of high quality zinc oxide (ZnO) thin films on amorphous glass substrates and their structural and optical characteristics. For the growth of ZnO films, mechanically exfoliated ultrathin graphite or graphene layers were used as an intermediate layer because ZnO does not have any heteroepitaxial relationship with the amorphous substrates, which significantly improved the crystallinity of the ZnO films. Structural and optical characteristics of the films were investigated using scanning and transmission electron microscopy, x-ray diffraction, and variable temperature photoluminescence spectroscopy. High crystallinity and excellent optical characteristics such as stimulated emission were exhibited from the high quality ZnO films grown on glass substrates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.201-201
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• 2011

Recently, mussel-inspired surface modification, called polydopamine coating has been extensively implemented to many areas, due to its material versatility and ease to use. In particular, incubation of substrates in an alkaline dopamine solution resulted in self-polymerization of dopamine and modified variety of material surfaces, including noble metals, metal oxides, ceramics, and synthetic polymers. However, the polydopamine coating has a drawback to practical use; it takes more than 12 hrs to introduce sufficient polydopamine layers to solid substrates. Here, we investigated the rate-enhanced polydopamine coating by varying reaction conditions: pH, concentration, and the addition of the oxidizing agent. As a result, the optimum condition for fast polydopamine coating was found, and solid substrates were efficiently coated with polydopamine layers in just few minutes using the condition. The polydopamine-modified surface was characterized by XPS and contact angle goniometry, and the biocompatibility of the modified surface was also proved by cell attachment test.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.632-632
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• 2013

We generated single-crystal organic nanowire arrays using a direct printing method (liquidbridge- mediated nanotransfer molding) that enables the simultaneous synthesis, alignment and patterning of nanowires from molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. The position of the nanowires on complex structures is easy to adjust, because the mold is movable on the substrates before the polar liquid layer, which acts as an adhesive lubricant, is dried. Repeated application of the direct printing process can be used to produce organic nanowire-integrated electronics with twoor three-dimensional complex structures on large-area flexible substrates. This efficient manufacturing method is used to fabricate all-organic nanowire field-effect transistors that are integrated into device arrays and inverters on flexible plastic substrates.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1247-1251
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• 2009

The recognition of neutral aromatic substrates by different neutral calix[4]arene receptors 1, 2, and 3 was studied by NMR spectroscopy. The stoichiometry is 1:1 in all cases as was confirmed by jobs plot. Owing to the deep cavity, 1 affords stronger binding abilities for substrate 4 and 5, while all receptors remained inert for substrates 6 and 7. The binding constants determined by $^1H$ NMR titration show that the recognition of substrate 4 by 1 gives strongest complexation ($K_a\;of\;9.8\;{\times}\;102\;M^{-1}$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.133-136
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• 2007

IGZO TFTs were fabricated by conventional photolithography and wet-etching processes on metal substrates for the flexible display. The characteristics of TFTs on metal substrates were comparable to those of TFTs on glass substrates. Moreover, AM-OLED panels based on IGZO TFT arrays on metal substrates were successfully driven, for the first time.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.24-26
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• 2003

We fabricated Ni and Ni alloy substrates for YBCO coated conductors. The Ni and Ni alloy substrate was fabricated by powder metallurgy technique and cold rolling. The texture of substrates had a strong 4-fold symmetry and ［111］∥ND texture after annealing temperature of 100$0^{\circ}C$. The measured full-width half-maximum (FWHM) of in-plane and out-of-plane was in the range of 6$^{\circ}$-10$^{\circ}$. The powder metallurgy technique is fabrication of the substrates for considered to be suitable for the application of YBCO coated conductors.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.138-143
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• 2004

Recently there has been a great world-wide interest in developing and characterizing new nano-structured materials. These newly developed materials are often prepared in limited quantities and shapes unsuitable for the extensive mechanical testing. The development of depth sensing indentation methods have introduced the advantage of load and depth measurement during the indentation cycle. In the present work, ZnO thin films are prepared on Si(111), Si(100) substrates at different temperatures by pulsed laser deposition(PLD) method. Because the potential energy in c-axis is low, the films always show c-axis orientation at the optimized conditions in spite of the different substrates. Thin films are investigated by X-ray diffractometer and Nano indentation equipment. From these measurements it is possible to get elastic modulus and hardness of ZnO thin films on Si substrates.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.524-530
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• 2013

In this study, we describe the most expected behavior of cells on the modified surface and the correlation between the modified substrates and the response of cells. The physicochemical characteristics of substrates played an essential role in the adhesion and proliferation of cells. Glass and polymer substrates were modified using air plasma oxidation, and the surfaces were coated with self-assembled monolayer molecules of silanes. The PDMS substrates embedded with parallel micropatterns were used for evaluation of the effect of topologically modified substrate on cellular behaviour. BALB/3T3 fibroblast cells were cultured on different surfaces with distinct wettability and topology, and the growth rates and morphological change of cells were analyzed. Finally, we found the optimum conditions for the adhesion and proliferation of cells on the modified surface. This study will provide insight into the cell-surface interaction and contribute to tissue engineering applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.