• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.46-49
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• 1992

Cadmium sulfide thin films were deposited on glass substrate by Chemical Mist Deposition from solutions containing equimolar (0.1M) cadmium chloride and thiourea [(NH$_2$)$_2$CS] at a mist velocity of 1.6m/sec. Substrate temperatures were ranged between 200$^{\circ}C$ and 400$^{\circ}C$. The microstructure and semiconducting property of the films were investigated using SEM, X-ray diffraction, UV transmittance measurement and four point probe method. All the films have hexagonal structure and diffraction patterns indicate that the intensity of (112) and (101) reflections increase with increasing substrate temperature, whereas (002) reflection substrate temperature, whereas(002) reflection decrease for substrate temperatures between 250$^{\circ}C$ and 350$^{\circ}C$. The films prepared at lower temperature have a significant number of pinholes due probably to entrapped gaseous reaction. Optical transmittance of the films deposited at 350$^{\circ}C$ was about 75%. Optical bandgap of the films were 2.43eV regardless of substrate temperature. The dark resistivity of the films decreased with increasing substrate temperature up to 300$^{\circ}C$ and increased with further increasing substrate temperature. The films were photosensitive and had dark-to-light resistivity ratios of about 10 at room temperature for a white-light photoexcitation intensity of 50mw/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.357-360
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• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1351-1354
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• 2006

In this paper, we study the effect of substrate temperature on property of Ga doped ZnO (GZO) thin film for transparent conductive oxide (TCO).GZO thin films have been deposited on corning glass 1737 by D.C. magnetron sputtering. We investigated the structural and electrical properties of GZO films using the X-Ray Diffractometer(XRD), Field Emission Scanning Electron Microscopy(FESEM) and 4-points probe .

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.98-100
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• 2006

ZnO thin films were deposited at different repetition rates of 5 Hz and 10 Hz by pulsed laser deposition. X-ray diffraction (XRD) full widths at half maximum (FWHMs) of (002) ZnO peak in ZnO thin film deposited at 5 Hz and 10 Hz was 0.22 and $0.26^{\circ}$, respectively. The grain size of ZnO thin film deposited at 5 Hz was larger than that of 10 Hz. The variation of repetition rates did not have an effect on the optical property of ZnO thin films. The degradation of the crystalline quality and surface morphology in ZnO thin film deposited at 10 Hz resulted from supersaturation effect by decrease of time interval between a ZnO particle arriving on a substrate by laser shot and a ZnO particle arriving on a substrate by next laser shot.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.75-77
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• 2004

Microstructure and mechanical property of In48Sn solder on electrolytic Au/Ni/Cu BGA substrate were investigated with the number of reflows. AuIn and AuIn$_2$ IMCs were formed at the interface solder and pad after 1reflow. An increase of the number of reflows changed AuIn into AuIn$_2$. AuIn$_2$ IMC layer at the interface broke and spalled away into the solder after 3reflows. Shear force decreased with the number of reflows because the weakness of the interface by the spalling of AuIn$_2$ IMC layer.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1343-1350
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• 1998

A study is made of mechanical properties of unglazed matrix as a funtion of sintering temperature and crack patterns in layer structur pottery consisting of glaze and substrate and in matrix which is sintered at 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively. The mechanical properties of matrix are increased due to density and vitrification to 130$0^{\circ}C$ The interface of glazed bilayer reveals the reactive intermediate layer. Herzian indentation testing is used to investigate the evolution of damage modes as a function of load. In the materials sintered at 120$0^{\circ}C$ quasi-plastic deformation is developed at the matrix and the cone-like cracks initiate at the glazing top surface and additionally upward-extending transverse cracks initiate at the internal in-just initiate at the glazing top surface which pass through the interface with increasing of indentation load. Finally the dominant damage mode shifts from substrate quasi-plasticity to coating fracture with increasing sintering temperature.

• Journal of Advanced Marine Engineering and Technology
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• v.13 no.2
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• pp.64-77
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• 1989

In this study, the experiments were carried out for the purpose of establishment of aluminium cementation to steel surface by diffusible heat treatment after making the coated film onto the substrate by arc spray method. Also, the microstructure and mechanical properties of the cementation layer produced by this study were inspected for various heat treatment and spraying conditions. Main results obtained are as follow ; 1. The coating film characteristics which have excellent errosion-resistance, high temperature oxidation-resistance are obtained by aluminium penetration heat treatment after making the sprayed aluminum coating film onto the steel substrate. 2. Aluminium diffusion penetration takes place at higher temperature than 660.deg.C, and the more heat treatment time and the higher heat treatment temperature adopted, the deeper diffusion layer obtained. 3. Insert gas arc spraying using argon gas as the carrier gas higher improvement of mechanical property than that of compressed air environment. 4. The coating film characteristics appeared to be improvement of adhesive property, porosity plugging effect by heat treatment in air environment.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.563-568
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• 2012

The wetting property and reflectivity of Sn-3.5Ag solder which was dip coated on a LED lead frame were investigated. The wettability of molten solder on Cu substrate was evaluated by the wetting balance tester, and surface tension was calculated from maximum withdrawal force and withdrawal time. Temperature of the molten solder in a bath was varied in the range of $250-290^{\circ}C$. With increasing temperature, the surface tension decreased a little. The reflectivity of Sn-3.5Ag coated on a substrate became a little lower than the highest current LED lead frame reflectivity.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.9
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• pp.877-880
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• 2009

A curing process in post-printing section of R2R process is required for an electrical property of the printed pattern when devices such as RFID, Solar cell are printed. PEN as well as heat-stabilized PET which is used as a plastic substrate would be deformed at high temperature due to change of its elastic modulus. And crack in the printed pattern, which is on the plastic substrate is occurred due to the deformation of the substrate. The occurrence of crack causes electrical resistance to increase and the quality of the device to deteriorate. In case of RFID antenna, the range of reading distance is shortened as the electrical resistance of the antenna is increased. Therefore, the deformation of the plastic substrate, which causes the occurrence of crack, should be minimized by setting up low operating tension in R2R process. In low tension, slippage between a moving substrate and a roller would be generated when the operating speed is increased. And scratch would be occurred when slippage is generated due to an air entrainment, which is related to the thickness of the air film. The thickness of the air film is increased when operating speed is increased as shown by simulation based on mathematical model. The occurrence of scratch in conductive pattern printed by roll to roll process is a critical damage because it causes degradation or failure of electrical property of it.