• Journal of the Korean institute of surface engineering
• /
• v.28 no.4
• /
• pp.225-235
• /
• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.363-367
• /
• 2004

Recently ZnO epitaxial layers have been widely studied as a semiconductor material for optoelectronic devices. Sapphire and silicon are commonly selected as substrate materials for ZnO epitaxial growth. In this communication, we report the effect of the ECR plasma pretreatment of sapphire and silicon substrates on the nucleation in the ZnO ALE (atomic layer epitaxy). It was found that ECR plasma pretreatment reduces the incubation period of the ZnO nucleation. Oxygen ECR plasma enhances ZnO nucleation most effectively since it increases the hydroxyl group density at the substrate surface. The nucleation enhancing effect of the oxygen ECR plasma treatment is stronger on the sapphire substrate than on the silicon substrate since the saturation density of the hydroxyl group is lower at the sapphire surface than that at the silicon surface.

• KSBB Journal
• /
• v.16 no.5
• /
• pp.446-451
• /
• 2001

A pretreatment method to increase enzymatic digestibility for waste paper such as newspaper was investigated. Ash content, substrate size and printed ink were considered to be factors that affect on enzymatic hydrolysis. The effect on enzymatic digestibility of varying these factor were measured. Printed ink had the highest effect of the three factors, so a method was developed to remove the ink during pretreatment. Fist, a pretreatment process using a percolation reactor was tried. The digestibility of the substrate pretreated at 170$\^{C}$, however, was less than that of the untreated substrate because only small portion of ink was removed. Therefore, a batch type process at less than 100$\^{C}$ was devised. Of several schemes, a method using amonia-hydrogen peroxide mixture on a shaking bath proved most effective. The digestibility obtained from this method was about 85%--approximately 20% greater than the untreated substrate. This proves the pretreatment method was very effective in treating waste paper. The high digestibility obtained from this pretreatment is probably due to the effects of the hydrogen peroxide that can enhance ink removal and substrate swelling.

• Journal of Industrial Technology
• /
• v.39 no.1
• /
• pp.7-14
• /
• 2019

Carbon nanotubes (CNT) on metal substrates are definitely beneficial because they can maintain robust mechanical stability and high conductivity between CNT and metal interfaces. Here, we report direct growth of CNT on Ni-based superalloy, Inconel 600, using thermal chemical vapor deposition (CVD) with acetylene feedstock in the growth temperature range of $400-725^{\circ}C$. Furthermore, we studied the effect of substrate pretreatment on the growth yield enhancement and growth temperature decrease of CNT on Inconel 600. Activation energy (AE) for CNT growth was estimated from the CNT height change with respect to the growth temperature. The AE values significantly decreased from 205.03 to 24.35 kJ/mol by the pretreatment of thermal oxidation of Inconel substrate at $725^{\circ}C$ under ambient. Higher oxidation temperature tends to have lower activation energy. The results have shown the importance of pretreatment temperature on CNT growth yield and growth temperature decrease.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1102-1103
• /
• 2006

The pretreatment for substrate was carried out in change of gun pressure of $0.5\sim3.5$ bar using wet blasting. The size of $Al_2O_3$ powder was about $50{\sim}150{\mu}m$. As the results, the surface roughness of cemented carbide substrate was improved with increment of gun pressure of wet blasting. A new surface layer was formed and Co particles were uniformly distributed over the entire surface after pretreatment. The adhesion of the pretreated substrate in same PVD-TiAlN film was improved and in approximately $Ra=90\sim120\;nm$ shown the best adhesion value.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.361-366
• /
• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

• Journal of the Korean institute of surface engineering
• /
• v.57 no.1
• /
• pp.1-7
• /
• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Korean Journal of Materials Research
• /
• v.5 no.6
• /
• pp.732-742
• /
• 1995

Effects of the substrate pretreatment on uncleation density of the diamond thin films have been investigated. The film was prepared using the hot-filament CVD reactor with the mixture of methane and hydrogen. The substrate pretreatment was done in three different ways: predeposition of carbon on the substrate, soot on the substrate, and graphite on the substrate. All three cases enhanced the nucleation density of diamond. And the effect was more marked in the first and the second cases than in the third one. In the first case where the substrate was predeposited by the carbon phase, a very smooth and uniform film of diamond could be obtained. Since the bound strength between the substrate and the predeposited carbon phase is relatively weak, separation of the diamond film layer from the substrate was found to be easy.

• Journal of the Korea Organic Resources Recycling Association
• /
• v.31 no.1
• /
• pp.27-34
• /
• 2023

In this study, spent mushroom substrate (SMS), which consits of lignocellulosic material, was pretreated by hydrothermal method; the changes of biodegradability and methane production yield of pretreated SMS were determined according to formation of lignocellulosic biomass degrading byproducts formation during thermal pretreatment. Based on the results, all hydrothermal pretreatment temperatures showed improved solubilization performance for biomass, and the optimum pretreatment effect was observed at an pretreatment temperature of 150℃ with the highest methane production yield. However, the induced formation of furan derivatives (i.e., 5-hydroxymethylfurfural and furfural) as byproducts during hydrolysis of hemicellulose and cellulose at severe condition lowered biodegradability and methane yield when the hydrothermal pretreatment temperature was higher than 180℃. Thus, this study revealed that hydrothermal pretreatment could promote anaerobic digestion efficiency of lignocellulosic biomass and is of great importance for preventing byproducts formation through pretreatment condition control.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.249-255
• /
• 1999

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.