• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.1-5
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• 2018

Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.98-102
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• 2000

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.375-381
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• 2000

In this paper, we described the characterization of High-Tc Superconducting(HTS) microstrip antenna using non-radiating edge feeding technique and reported the microwave properties of HTS antennas with temperature. To do this, we prepared the $YBa_2Cu_3O_{7-x}$ superconducting thin film on MgO substrate using pulse-laser deposition techniques. The HTS microstrip antenna using non-radiating feeding technique was fabricated using chemical wet-etching. Then it was compared with identical antenna patterned with evaporated gold. The diverse measured results have been reported in terms of the input impedance, resonant frequency and return loss. In additional, at around the critical temperature, the effect of kinetic inductance which affect the resonant characteristic of the HTS microstrip antenna was reported.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1229-1231
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• 1997

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

• Archives of Pharmacal Research
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• v.25 no.5
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• pp.643-646
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• 2002

The succinic semialdehyde dehydrogenase (SSADH) inhibitory component was isolated from the EtOAc fraction of Lactuca sativa through repeated column chromatography; then, it was identified as phytol, a diterpenoid, based on the interpretation of several spectral data. Incubation of SSADH with the phytol results in a time-dependent loss of enzymatic activity, suggesting that enzyme modification is irreversible. The inactivation followed pseudo-first-order kinetics with the second-rate order constant of $6.15{\times}10^{-2}mM^{-1}min^{-1}.$ Complete protection from inactivation was afforded by the coenzyme $NAD^{+}$, whereas substrate succinic semialdehyde failed to prevent the inactivation of the enzyme; therefore, it seems likely that phytol covalently binds at or near the active site of the enzyme. It is postulated that the phytol is able to elevate the neurotransmitter GABA levels in central nervous system through its inhibitory action on one of the GABA degradative enzymes, SSADH.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• Journal of Welding and Joining
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• v.26 no.4
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• pp.44-49
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• 2008

Generally, wear plate is steel plate having improved surface contact strength and impact strength by surface hardening which is welded using materials with good corrosion resistance, wear resistance and thermal resistance property. CFP GMAW(Compound Filler Plate Gas Metal Arc Welding) is the cladding method using GMAW with the CFP, which is bound with waterglass, on the substrate. It has advantages of reducing compound powder loss, uniform penetration, and preventing hardness decrease. To develope mass production technique of CFP GMAW process for production of high quality wear plate, the method for controling shallow penetration and increasing productivity is required. In this study, twin torch method applied to CFP GMAW process for increasing productivity. And the method was developed by controling penetration control, CFP dry time, gas formation flux and water glass concentration. As a result, applying twin torch method to CFP GMAW process was possible and high quality wide bead could be made without overlap joint.

• Journal of Microbiology
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• v.43 no.6
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• pp.561-568
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• 2005

A newly-isolated thermophilic strain of the zygomycete fungus Rhizomucor pusillus 13.36 produced highly active dextrinogenic and saccharogenic enzymes. Cassava pulp was a good alternative substrate for amylase production. Dextrinogenic and saccharogenic amylases exhibited optimum activities at a pH of 4.0-4.5 and 5.0 respectively and at a temperature of $75^{\circ}C$. The enzymes were highly thermostable, with no detectable loss of saccharogenic or dextrinogenic activity after 1 hand 6 h at $60^{\circ}C$, respectively. The saccharogenic activity was inhibited by $Ca^{2+}$ while the dextrinogenic was indifferent to this ion. Both activities were inhibited by $Fe^{2+}\;and\;Cu^{2+}$ Hydrolysis of soluble starch by the crude enzyme yielded $66\%$ glucose, $19.5\%$ maltose, $7.7\%$ maltotriose and $6.6\%$ oligosaccharides.