• Korean Journal of Optics and Photonics
• /
• v.18 no.1
• /
• pp.50-55
• /
• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.4
• /
• pp.182-189
• /
• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.24 no.11
• /
• pp.1484-1491
• /
• 2020

Since the slot line transmits electric and magnetic signals through the slot, the size of the slot greatly affects the signal power loss. In order to have low loss, the slot line is mainly used at a high frequency of above 3GHz on a substrate having a high dielectric constant(er). This paper proposes the 4:1 impedance transformer using a slot line on TLC-30 laminate (h=20mil, er=3.0; Taconic) being a relatively low dielectric constant at a frequency of 1.85GHz. In the proposed impedance transformer, the dielectric resonator is arranged on the slot line to reduce signal loss occurring at the slot line. The proposed 4:1 microstrip-slot line impedance transformer fabricated using a (Zr,Sn)TiO4 dielectric resonator(er=38) has the transmission loss(S21) of -0.375dB and the reflection value(S11) of -27.6dB at 1.855GHz. This confirms that the slot line can be stably used even in a low dielectric constant substrate and a low frequency region by using a dielectric resonator.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.39 no.12
• /
• pp.559-565
• /
• 2002

Today, because a quality factor of the inductor fabricated on silicon substrate for RFIC is under 12, the realization of inductor haying high-Q is essential. In this paper, two inductors having improved Q-factor are proposed and fabricated using a bondwire on silicon substrate. Also for the PGS is applied to the same inductors, four inductors are fabricated finally The bondwire Inductors have the relatively low conductor loss due to wide cross-section area and they can reduce the parastic capacitance very much because they are located in the air. Simulation and measurement results show that the proposed inductors have much more improved Q-factor, 15, than a conventional spiral inductor at 1.5 GHz. Because of the use of an automatic bonding machine, we can fabricate the high - Q inductors very easily, repeatedly.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.623-626
• /
• 2005

In this paper, we proposed a new type SIR bandpass filter using DAML. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAML ring resonator is elevated with $10\;{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about 10 % at 60 GHz

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.146-150
• /
• 2001

Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe. And the cascade transmission matrix conversion was performed. The same measurements and conversion techniques were conducted on the assembled test chip and substrate at the same frequency range. Then impedance values in ACF flip-chip interconnection were extracted from cascade transmission matrix. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of SiO$_2$filler to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. High frequency behavior of metal Au stud bumps was investigated. The resonance frequency of the metal stud bump interconnects is higher than that of ACF flip-chip interconnects and is not observed at the microwave frequency band. The extracted model parameters of adhesive flip chip interconnects were analyzed with the considerations of the characteristics of material and the design guideline of ACA flip chip for high frequency applications was provided.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.12 no.3
• /
• pp.445-450
• /
• 2017

In this paper, the directional coupler with half-power division is designed and fabricated by using the vertical coupling structure based on the CPW transmission-line. Even-mode and odd-mode of the vertical coupling structure can be analyzed by the conventional CPW-line and the CBCPW-line, respectively, with half thickness of the substrate. The directional coupler is designed by using the tefron substrate with the dielectric constant of 2.55 and the thickness of 0.76mm. Manufactured directional coupler has the center frequency of 2.45 GHz and the bandwidth of 66.1%. Also, the return loss and isolation are 19.52dB and 19.47dB, respectively, at the center frequency.

• Current Photovoltaic Research
• /
• v.6 no.2
• /
• pp.56-61
• /
• 2018

In this study, CIGS absorber layers were deposited on low-alkali glass and sodalime glass substrates and potasium floride (KF) of various thicknesses was supplied at an elevated temperature after the CIGS growth. The effect of KF post-deposition treatment on the two types of substrates was extremely different. On the low-alkali substrate, the open-circuit voltage (Voc) was improved but the fill-factor (FF) degradation was severe, whereas the sodalime substrate showed Voc deterioration and FF improvement. In the case of supplying 20 nm of KF on both substrates, the efficiency gain of 0.3~1.1%p was obtained. With increasing the KF thickness, a small protrusion-like microstructure developed on the surface of the absorber layer, and the microstructures that were not removed in the subsequent process were found to be the main cause of the FF loss.

• Textile Coloration and Finishing
• /
• v.8 no.6
• /
• pp.27-32
• /
• 1996

This research is to investigate the reaction kinetics by air-lift bioreactor using calcium hydroxide, the neutralization agent and immobilization media, for removing ethylene glycol remained after chemical pretreatment. It was found that the optimum hydraulic retention time was obtained as 24.2hours at the optimum F/M ratio of 1.32kg-$TCOD_{Mn}$/day.kg-MLVSS, and then, infiuent $TCOD_{Mn}$ and MLVSS concentration were 3,290mg/l and 2,472mg/l, respectively. During the steady state, the kinetics constants such as maximum specific substrate removal rate, half saturation velocity coefficient, yield coefficient and endogenous respiration coefficient were estimated in the base of $TCOD_{Mn}$ as substrate concentration. And they were 1.47day$^{-1}$, 3.95mg/l, 0.391 and 0.092day$^{-1}$, respectively. And also, the oxgen use coefficients for cell synthesis, a', and energy of maintenance, b', were obtained as 0.4kg-O$_{2}$/kg-$TCOD_{Mn}$ and 0.056day$^{-1}$, at the steady state by the experimental result of oxygen uptake rate.

• BMB Reports
• /
• v.30 no.2
• /
• pp.125-131
• /
• 1997

This work reports studies of the catalytic and structural properties of pyridoxal kinase (ATP: pyridoxal 5' -phosphotransferase, EC. 2.7.1.35), Pyridoxal kinase catalyzes the phosphorylation of vitamin $B_6$ (pyridoxal, pyridoxamine, pyridoxine) using ATP-Zn as a phosphoryl donor. The enzyme purified from brain tissues is made up of two identical subunits of 40 kDa each. Native enzyme was inhibited by a substrate analogue, pyridoxal-oxime. Limited chymotrypsin digestion of pyridoxal kinase yields two fragments of 24 and 16 kDa with concomitant loss of catalytic activity. These fragments were isolated by DEAE ion exchange chromatography and used for binding studies with fluorescent ATP and pyridoxal analogues. The spectroscopic properties of both fluorescent pyridoxal analogue and Anthraniloyl ATP (Ant-ATP) bound to the 24 kDa fragment are indistinguishable from those of both pyridoxal analogue and Ant-ATP bound to the native pyridoxal kinase, respectively. The small 16 kDa fragment, generated by proteolytic cleavage of the kinase, does not bind any of the substrate analogues. Binding characteristics of Ant-ATP were extensively studied by measuring the changes in fluorescence spectra at various conditions. From the results presented herein, it is postulated that the structural domain associated with catalytic activity comprises approximately one-half of the molecular mass of pyridoxal kinase (24 kDa). whereas the remaining portion (16 kDa) of the enzyme contains a regulatory binding domain.