• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.342-342
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• 2010

This paper mainly focuses and describes four-armed dual-band rectangular type patch antenna using teflon of 0.54 mm thickness substrate for the application in personal wireless communications at about 2 GHz and 2.5 GHz frequency ranges. The dual-band patch antenna is obtained by embedding one centered and two pairs of rectangular patches on single body above the substrate. Details of the proposed antenna design are presented and discussed as a novel design with remarkable value of return loss (S11) of -28.68 dB and it is the most suitable for WiMAX applications as well.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.543-544
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• 2008

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

• 센서학회지
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• 제16권4호
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• pp.301-306
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon wafers by reactive magnetron sputtering method. The structural characteristics were dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature, and nitrogen partial pressure. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Electron Probe MicroAnalyzer (EPMA) and Atomic Force Microscope (AFM) have been used to find out structural properties and preferred orientation of AlN thin films. Insertion loss of SAW devices was 28.51 dB and out of band rejection was about 24 dB.

• Journal of information and communication convergence engineering
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• 제5권3호
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• pp.219-222
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• 2007

Highly conductive and transparent aluminum doped ZnO thin films (AZO) films have been prepared by r.f. magnetron sputtering processes on poly carbonate (PC) and onto glass as reference. In addition, the electrical, optical properties of the films prepared at various sputtering powers were investigated. The XRD measurements revealed that all of the obtained films were polycrystalline with the hexagonal structure and had a preferred orientation with the c-axis perpendicular to the substrate. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with the resistivity as low as $9.7{\times}10^{-4}\;{\Omega}-cm$ and transmittance over 90% have been obtained by suitably controlling the r.f. power.

• ETRI Journal
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• 제33권5호
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• pp.802-805
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• 2011

This letter presents a K-band polarization reconfigurable antenna integrated with a silicon radio frequency MEMS switch into the form of a compact package. The proposed antenna can change its state from linear polarization (LP) to circular polarization (CP) by actuating the MEMS switch, which controls the configuration of the coupling ring slot. Low-loss quartz is used for a radiating patch substrate and at the same time for a packaging lid by stacking it onto the MEMS substrate, which can increase the system integrity. The fabricated antenna shows broadband impedance matching and exhibits high axial ratios better than 15 dB in the LP and small axial ratios in the CP, with a minimum value of 0.002 dB at 20.8 GHz in the K-band.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• 한국항해학회지
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• 제20권4호
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• pp.129-137
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• 1996

In this paper, we simulated a radiation pattern directivity of microstrip patch antenna for 9[GHz] using the computer. It is analyzed and compared the directivity of field characteristics at two different aspects. One is that of 1-dimension and 2-dimension array, the other is that of a linear and planar array antenna. We tried the constants for the simulation of teflon substrate, dielectric constant ${\varepsilon}r=2.50$, ground plane conductor thickness t=0.03556, substrate height h=0.72188, dielectric loss degree $tan{\delta}$=0.00085, characteristics impedence of line $Zo=50({\Omega})$. The major advantage of microstrip patch antenna is that the arrangement of antenna is associated with the directivity and effectiveness. We have been studied the difference of the radiation pattern of antenna with wave variety through computer simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.569-572
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• 2000

This paper presents the optimized fabrication and thermal characteristics of micro-heaters for thermal MEMS applications using a SDB SOI substrate. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10$\mu\textrm{m}$ thick silicon membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD(Resistance Thermometer Device)on the same substrate by using MgO as medium layer. The thermal characteristics of the micro-heater with the SOI membrane is 280$^{\circ}C$ at input Power 0.9 W; for the SOI membrane with 10 trenches, it is 580$^{\circ}C$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro thermal sensors and actuators.

• 한국전자파학회논문지
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• 제26권3호
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• pp.227-247
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• 2015

저손실, 전자기 완전차폐, 고전력 특성을 갖는 기판집적 도파관(SIW)을 이용하여 X-band $8{\times}16$ 이중편파 능동 위상배열안테나 시스템을 구현하였다. 16-way SIW 전력분배 네트워크의 측정된 순수 삽입손실(0.65 dB)은 마이크로스트립 경우보다 1 dB 감소하였으며, SIW 부배열($1{\times}16$) 안테나 소자의 측정된 방사효율(73 %)은 약 2배(3 dB) 향상되었다. 이러한 SIW를 이용한 분배손실과 방사효율의 상당한 개선은 능동 위상 배열안테나 시스템에서 고전력 증폭기의 최대출력(P1 dB)을 저감하고, 총 전력소모를 약 30 % 절감할 것이다. SIW 기반으로 제작된 X-band $8{\times}16$ 이중편파 능동 위상 배열안테나 시스템을 이론적인 제어벡터만을 생성하여 0도, 5도, 9도, 18도의 정밀한(최대편차 2도) 빔 조향을 측정하였으며, 열주기/진공 시험에서 우주환경 적합성을 확인하였다. 고효율 SIW 배열안테나 시스템은 고성능 레이더는 물론 차세대 무선통신(5G)을 위한 Massive MIMO와 다양한 밀리미터파 통신시스템(60 GHz WPAN, 77 GHz 자동차 레이더, 초고속 디지털 전송시스템 등)에 매우 유용할 것으로 기대한다.

• 한국산학기술학회논문지
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• 제12권7호
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• pp.3169-3175
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• 2011

본 논문에서는 가유전체 기판구조의 증가하는 유효 유전율 효과를 이용하여 방향성결합기를 소형화하여 설계하는 것에 대하여 기술한다. 방향성결합기는 RF 신호의 크기를 간접적으로 측정하거나 신호전력을 결합하는데 널리 사용되는 회로이다. 가유전체 기판구조는 다수의 도금된 비어홀에 의하여 표준형 기판보다 유효 유전율이 증가하는 특성을 지니는데, 이 특성이 바로 회로 소형화에 이용된다. 한 예로써 2GHz대에서 15dB의 결합계수를 갖는 방향성결합기가 표준형 기판과 가유전체 기판구조에 대하여 각각 설계되고 그 크기가 비교된다. 표준형 회로와 비교할 때, 가유전체 기판구조로 소형화된 방향성결합기는 동일한 성능을 유지하면서도 1/3로 줄어든 회로의 크기를 갖는다. 또한 소형화된 방향성결합기를 제작하여 측정한 성능은 예측 결과와도 매우 유사함을 보여준다. 측정한 성능 결과는 2GHz대에서 -14.62B의 결합도, -24.1dB의 정합도, -0.38dB의 삽입손실 특성을 보여준다.