• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.09a
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• pp.183-192
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• 2001

1- Buildup PCB technology is utilized to a bare chip attach substrate technology for packaging of semiconductor chip 2- Requirement for the substrate design rule is described in SIA International Technology Roadmap for Semiconductor. 3- There are seven fabrication methods of build-up technology. 4- Coating and lamination for resin and photo, and laser for micro via hope processes are available. Below $50\mu\textrm{m}$ in diameter is possible. 5- Fine pitch lines down to $30\mu\textrm{m}$ can be achieved by pattern plating with better electrical property. 6- Dielectric loss reduction is a key material improvement item for next generation build-up technology. 7- High band width up to 512 GB/s is possible with current wiring groundrule.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.151-154
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• 1999

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.5
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• pp.455-461
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• 2015

This paper deals with an experimental verification of a temperature-dependent power loss model of a DC/DC converter in severe temperature conditions. The power loss of a DC/DC converter is obtained by summing the losses by the components constituting the converter including switching elements, diodes, inductors, and capacitors. MIL-STD-810F stipulates that any electronic devices must be operable in the temperature ranging from $-50^{\circ}C$ to $70^{\circ}C$. We summarized the temperature-dependent loss models for the converter components. A SEPIC-type converter is designed and built as a target. Using a constant-temperature chamber, a test rig is set up to measure the power loss of the converter. The experimental results confirm the validity of the loss model within 4.5% error. The model can be useful to predict the efficiency of the converter at the operating temperature, and to provide guidelines in order to improve the efficiency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.781-790
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• 2001

The effects of silicon substrate thickness on the performance of thin film PZT IR detectors are theoretically and experimentally investigated. Theoretical analyses show that the pyroelectric current responsivity of a detector without a silicon substrate is about two orders higher than that of a detector with a 450${\mu}{\textrm}{m}$ thick silicon substrate. At a fixed chopping frequency of 100Hz, the pyroelectric current responsivity decreases exponentially with increasing silicon substrate thickness up to 50${\mu}{\textrm}{m}$, and above 50${\mu}{\textrm}{m}$ the decreasing rate become slow. The thinner the silicon substrate is, the less the thermal loss by conduction is , and thus the higher responsivity is resulted. To verify the theoretical analyses, micromachined PZT thin film IR detectors with different silicon substrate thicknesses are fabricated and characterized. The theoretical and experimental results show the similar tendencies for all silicon substrates with varying thickness.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.193.2-193
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• 2000

• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.23-26
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• 2008

Constructions of coated conductor which is differently from Bi-2223 is comprised multiple coatings on a base material or substrate and designed to achieve the highest degree of alignment possibility of the atoms in the superconductor material. In this study, we are measured and analyzed degradations of critical current according to diameter. In addition to study the effects of bending strain, we observed the AC loss of coated conductor and carried out analytical study for relation between Ic degradation and AC loss as well. The measurement of AC loss and numerical calculation was carried out based on Norris theory to compare with experimental results. The relationship between critical current and AC loss of HTS tapes with partial deformation by mechanical stress was studied. These results will amount the most important basis data in the of HTS cable, magnet, etc that winding work is required.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.324-329
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• 2006

In this paper, a resonator with the substrate integrated waveguide(SIW) structure at the satellite communication band is presented. The SIW structure is realized by via-holes on the dielectric substrate and has an advantage of integration with other circuits. For the measurement, a designed back-to-back transition has the insertion loss of 0.4 dB at 18 GHz. Also, the quality factor of the resonator with the SIW structure including back-to-back transition is obtained to be 222. The high-Q resonator with the SIW structure can be used in filter, oscillator, and voltage controlled oscillator.