• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.194-197
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• 1997

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the thick-fi lm GaN on AIN/Si substrates. We obtained substrate-free GaN. The foul t-width at half maximum of double crystal X-ray rocking curve from 350 ${\mu}{\textrm}{m}$ thick substrate-free GaN was ~1000 arcsec. The photoluminescence spectrum (at 20 K) shows the narrow bound exiton (I$_2$) line and wealth donor-acceptor pair recombination however. there was not observed deep donor-accepter pair recombination indicate the substrate-free GaN crystal prepared in this study are of high purity and high crystalline quality.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the KWS Conference
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• 2003.11a
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• pp.72-73
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• 2003

• Journal of the Korean Society of Clothing and Textiles
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• v.12 no.2 s.27
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• pp.225-235
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• 1988

The effects of surface free energy of substrates on the soiling and on the detergency of the oily soil were studied. The surface tension consisted of dispersion force and polar force components of substrate, oily soil and surfactant solutions were calculated by extended Fowkes' equation. From these values, work of adhesion($W_a$), work of detergency($W_D$), ana residual work of detergency($W_{D,R}$) were calculated. The correlations between these theoretical values of the works and detergency were discussed. MAA grafted PET film was used as substrate, triolein as oily soil and nonylphenol polyoxyethylene ether(NPE) having various mole numbers of oxyethylene adducts and dodecylbenzene sulfonate (DBS) as surfactants. Detergency was estimated by means of radioactive tracer method using $C^{14}-triolein$. The results showed that $W_a$ was decreased with the increase of surface free energy of substrate. In water, $W_D\;and\;W_{D,R}$ were decreased and detergency of tiolein was increased with the increase of surface free energy of substrate. In surfactant solutions, the lower the surface free energy of substrate and the lower oxyethylene adducts of NPE were the more effective on detergency. The detergency of DBS solution was the lowest in the case of ungrafted PET film, but even small increase in surface free energy by grafting showed much increase in detergency.

• Asian-Australasian Journal of Animal Sciences
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• v.19 no.9
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• pp.1314-1321
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• 2006

The objective of this work was to study the effect of mixed culture solid substrate fermentation of C. tropicalis ZD-3 with A. niger ZD-8 on detoxification of cottonseed meal (CSM), and to investigate the effect of fermentation period, proportion of CSM in substrate, sodium carbonate, minerals and heat treatment on the reduction of free gossypol levels during mixed culture solid substrate fermentation of CSM. Experiment 1: Three groups of disinfected CSM substrate were incubated for 48 h after inoculation with either of the fungi C. tropicalis ZD-3, A. niger ZD-8 or mixed culture (C. tropicalis ZD-3 with A. niger ZD-8). One non-inoculated group was used as the control. Levels of initial and final free gossypol (FG), CP and in vitro CP digestibility were assayed. The results indicated that mixed culture fermentation was far more effective than single strain fermentation, which not only had higher detoxification rate, but also had higher CP content and in vitro digestibility. Experiment 2: CSM substrates were treated according to experimental variables including fermentation period, proportion of CSM in substrate, sodium carbonate, minerals and heat treatment, Then, the treated CSM substrates were inoculated with mixed culture (C. tropicalis ZD-3 with A. niger ZD-8) and incubated at $30^{\circ}C$ for 36 h in a 95% relative humidity chamber. After fermentation ended, FG and CP content of fermented CSM substrate was assayed. The results showed that the appropriate fermentation period was 36 h, and the optimal proportion of CSM in substrate was 70%. Addition of sodium carbonate to CSM substrate was beneficial for fermentative detoxification. Heat treatment could facilitate fermentative detoxification, and supplementation with minerals was instrumental in reducing gossypol levels during mixed culture solid substrate fermentation of CSM.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.47-53
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• 2000

The fluxless wetting properties of TSM-coated glass substrate were evaluated by the wetting balance method. We could estimate the wettability of the TSM with new parameters obtained from the wetting balance test for one side-coated specimen. It was more effective in wetting to use Cu as a wetting layer and Au as a protection layer than to use Au itself as a wetting layer. The SnSb solder showed better wettability than SnAg, SnBi, and SnIn solders. The contact angle of the one side-coated glass substrate to the Pb-free solders could be calculated from the farce balance equation by measuring the static force and the tilt angle.

• Journal of Applied Biological Chemistry
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• v.54 no.1
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• pp.56-62
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• 2011

Molecular docking of polyhydroxy substituted flavone analogues (1-25) as substrate molecules to the active site of tyrosinase (PDB ID: Deoxy-form (2ZMX) & Oxy-form (1WX2)) and Free-Wilson analysis were studied to understand the roles of hydroxyl substituents ($R_1-R_9$) in substrate molecules for the tyrosinase inhibitory activation. It is founded from Free-Wilson analysis that the $R_1$=hydroxyl among $R_1-R_9$ substituents had the strongest influence on the tyrosinase inhibitory activity. H-bonds between the hydroxyl substituents of substrate molecules and amino acid residues in the active site of tyrosinase were contributed to make a stable substrate-receptor complex compound. Particularly, it is proposed from the findings that the noncompetitive inhibitory activation would take place via H-bonding between peroxide oxygen (Per404) atom in the active site of tyrosinase and the hydroxyl substituents in substrate molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.6
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• pp.715-723
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• 2016

This study investigated the effect of high concentration of free ammonia on microalgal growth and substrate removal by applying real wastewater nitrogen ratio. To test of this, the conditions of free ammonia 1, 3, 6, 9, 12, 15 mg-N/L are compared. After 3 days of incubation, algal growth of Chlorella vulgaris and carbon removal rate are respectively lower in the reactors of FA 12, 15 mg-N/L compared to the others. This indicates that the high concentration of free ammonia, in this case, above 12 mg-N/L, has negative effect on algal growth and metabolic activity. Also, high concentration of free ammonia causes the proton imbalance, ammonium accumulation in algae and has toxicity for these reasons. So, we have to consider free ammonia in applying the microalgae to wastewater treatment system by the way of diluting wastewater or controlling pH and temperature.