• Journal of Surface Science and Engineering
• /
• v.28 no.3
• /
• pp.133-141
• /
• 1995

The deposition characteristics of diamond films were investigated for three different substrates : Si, Inconel 600 and steel. Diamond films were prepared by microwave plasma CVD method using $CH_4$, $H_2$ and $O_2$ as reaction gases. The deposited films were analyzed with SEM, Raman spectroscopy and ellipsometer. For Si substrate, diamond films were successfully obtained for most of the deposition conditions used in this study. As the $CH_4$ flow rate decreased and the $O_2$ flow rate increased, the quality of the film was improved due to the reduced non-diamond phase in the film. For Inconel 600 substrate, the surface pretreatment with diamond powders was required to deposit a continuous diamond film. The films deposited at temperatures of $600^{\circ}C$ and $700^{\circ}C$ had mainly diamond phase, but they were peeled off locally due to the difference in the thermal expansion coefficient between the substrate and the deposited films. The films deposited at $500^{\circ}C$ and $850^{\circ}C$ had only the graphitic carbon phase. For steel substrate, all of the films deposited had only the graphitie carbon phase. We speculated that the formation of diamond nuclei on the steel substrate was inhibited due to the diffusion of carbon atoms into the steel substrate which has a large amount of carbon solubility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.5
• /
• pp.463-467
• /
• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.30-35
• /
• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.5
• /
• pp.289-293
• /
• 2000

This paper presents a study on the linear compensation of nonlinear hysteric actuators using the highly magnetostrictive film pattern as a strain sensor. Elements had a hybrid structure, in which thin soft glass substrate with the highly magnetostrictive amorphous FeCoSiB film was bonded on the PZT piezoelectric substrate. The magnetostrictive film as a strain sensor detects the deflection of an actuator, and a voltage signal from the strain sensor related to the deflection of an actuator is used for the linear control of an actuator.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.303.1-303.1
• /
• 2016

Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.487-490
• /
• 2004

In order to simulate OLED evaporation process, modeling of directional distribution of the vaporized organic materials, film thickness distribution profile and pattern-mask shadow effect are required In accordance with many literatures; all of them except shadow effect modeling are studied and developed. In this paper, modeling algorithm of evaporation shadow is presented for process simulation of full-color OLED evaporating system. In OLED evaporating process the offset position of the point cell-source against the substrate rotation axis and the usage of the patterned mask are the principal causes for evaporation shadow. For geometric simulation of shadow using z-map, the film thickness profile, which is condensed on a glass substrate, is converted to the z-map data. In practical evaporation process, the glass substrate is rotated. This physical fact is solved and modeled mathematically for z-map simulation. After simulating the evaporation process, the z-map data can present the shadow-effected film thickness profile. Z-map is an efficient method in that the cross-sectional presentations of the film thickness profile and thickness distribution evaluation are easily and rapidly achieved.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.141-153
• /
• 1997

The paraelectric cubic-to-ferroelectric tetragonal phase transition of the thin Pb(Zr, Ti)$O_3$ (PZT) films grown on MgO(001) substrate was investigated in a series of synchrotron x-ray scattering experiments. As the thickness of the film decreases the transition temperature and the amount of the tetragonal distortion were decreased continuously Different from only the c-domains were existent in the thinnest 25nm thick film. Based on this we propose a model for the domain structure of the tetragonal PZT/MgO(100) film that is very different from the ones suggested in literature. We attribute the suppression of the transition to the substrate field that prefers the c-type domains near the interface and suppresses the tetragonal distortion to minimize the film-substrate lattice mismatch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.331-334
• /
• 1998

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.9
• /
• pp.378-382
• /
• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.391-394
• /
• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.