• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.509-512
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• 1987

We report that the optimum substrate temperature to fabricate a-Si:H $n^+-p-p^+$ cell decreases with increasing the boron concentration in the Player. The results can be explained as the dependence of substrate temperature for the relaxation of silicon atoms and the bonded hydrogen concentration in the player.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.278-279
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• 2005

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.29-33
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• 2013

The understanding of the strain dependence of critical current, $I_c$, in the reversible region is important for the evaluation of the performance of coated conductor (CC) tapes in practical applications. In this study, the stress/strain tolerance of $I_c$ in GdBCO CC tapes with stainless steel substrate stabilized by additional Cu and brass laminate was analyzed quantitatively through $I_c$-strain measurement at 77 K under self-field. The variation in irreversible strain limits of CC tapes by the addition of stabilizing layers was analyzed through the consideration of the pre-strain induced on the GdBCO coating film. The results were then compared with the ones previously reported for GdBCO CC tapes with Hastelloy substrate. As a result, GdBCO CC tapes with stainless steel substrate showed much higher strain tolerance of $I_c$ as compared with those adopting Hastelloy substrate.

• Journal of Hydrogen and New Energy
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• v.5 no.2
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• pp.59-63
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• 1994

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Thickness dependence on hydrogenation on Pd film is examined in the thickness range between $60{\AA}$ and $800{\AA}$. Hydrogenation kinetics of thinner films(thinner than $500{\AA}$) and that of thicker films are different. Thin film(thickness < $200{\AA}$, substrate temp. = RT) showed recrystallization due to hydrogen induced heat. Hydrogen was absorbed by chemisorption process in ${\alpha}$ phase of thinner films, and diffusion process in ${\alpha}'$ phase of thicker films respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.436-447
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• 1994

ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.848-852
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• 2008

Characteristics of microcrystalline-silicon thin-films deposited by plasma-enhanced chemical-vapor deposition (PECVD) method were studied. There were optimum values of RF power density and $H_2$ dilution ratio $(H_2/(SiH_4+H_2))$; maximum grain size of about 35 nm was obtained at substrate temperature of 250 $^{\circ}C$ with RF power density of 1.1 W/$cm^2$ and $H_2$ dilution ratio of 0.91. Larger grain was obtained with higher substrate temperature up to 350 $^{\circ}C$. Grain size dependence on RF power density and $H_2$ dilution ratio could be explained by etching effects of hydrogen ions and changes of species of reactive precursors on growing surface. Surface-mobility activation of reactive precursors by temperature could be a reason of grain-size dependence on the substrate temperature. Microcrystalline-silicon thin-films that could be used for flat-panel electronics such as active-matrix organic-light-emitting-diodes are expected to be fabricated successfully using these results.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.128-129
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.886-888
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• 2009

We fabricated flexible electronic paper display(EPD) by using toner particles on plastic (PC) substrate. We observed the relationship between contrast ratio and changes of rib structures. One is a fabrication of ribs on bottom substrate. The display with ribs on bottom substrate had higher contrast ratio about 46% than display with ribs on top substrate. The other is a change of density of rib. The less density of ribs fabricated, the higher the contrast ratio become.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.48-53
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• 1994

In this paper, we present the analytical models for substrate current and gate current of stressed SC-PMOSFET using the change of the lateral electric field distribution due to the trapped electron. Calculated Isub and Ig of stressed SC-PMOSFET agree with experimental data. Our model can be very useful explaining the logarithmic time dependence of Isub and Ig. and also the trapped electron distribution.