• KSBB Journal
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• v.9 no.2
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• pp.122-126
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• 1994

A new method for the production of isomalto-oligosaccharides from maltose was investigated using intact cells of Aureobasidium pullulaans which had been known to produce fructo-oligosaccharides. The cells showed transglucosylation activity producing isomalto-oligosaccharides at high concentrations of maltose, while they showed a hydrolytic activity at low concentrations of substrate when cultivated at $25^{\circ}C$. The optimum reaction conditions for the isomalto-oligosaccharide production were as follows: substrate concentration, 500g/l maltose; pH, 4.5; temperature, $65^{\circ}C$; cell dosage, 10 unit per gram substrate. Under optimized conditions, the maximum yield of isomalto-oligosaccharides achieved was around 48% (w/w). At the early period of reaction, panose was selectively produced from maltose, and thereafter isomaltotriose was synthesized by utilizing panose as a substrate when maltose consumption was discontinued.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.400.2-400.2
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• 2016

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next generation solar cell because of their simple structure and low manufacturing cost. To realize a commercially competitive technology of DSSCs, it is imperative to employ a technique to prepare nanocrystlline thin film on the flexible organic substrate, aiming at increasing the flexibility and reducing the weight as well as the overall device thickness of DSSCs. The key operation of glass-to-plastic substrates conversion is to prepare mesoporous TiO2 thin film at low temperature with a high surface area for dye adsorption and a high degree of crystallinity for fast transport of electrons. However, the electron transport in the TiO2 film synthesized at low temperature is very poor. So, in this study, TiO2 films synthesized at high temperature were transferred on the selective substrate. We fabricated DSSCs at low temperature using this method. So, we confirmed that the performance of DSSCs using TiO2 films synthesized at high temperature was improved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.91-97
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• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• Korean Journal of Microbiology
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• v.20 no.2
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• pp.67-72
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• 1982

The effect of fermentation temperature on the production of high content alcohol has been investigated with high substrate concentration. The maximum specific growth rate, ${\mu}max\;was\;0.461hr^{-1}\;at\;35^{\circ}C$ which was the highest, whereas the maximum biomass concentration waas 8.7g/l at $25^{\circ}C$, at the growth rate lower than at $35^{\circ}C$. Approximately 140g/l of ethanol was produced in the temperature range of 20 to $25^{\circ}C$ with nearly complete comsumption of the substrate. Extended fermentation time has been required at lower temperatures, however, for the maximum values of biomass concentration and alcohol content, hence higher ethanol productivity, as the temperature was elevated to $40^{\circ}C$. The viability of yeasts was greatly improved by lowering the fermentation temperature down to $25^{\circ}C$ and also extended survival of the cells has been observed at lower fermentation temperatures, although the ethanol concentration of both waas higher.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.309-312
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• 2007

Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide($TiO_{2}$) films on indium tin oxide(ITO) coated glass substrate for dye-sensitized solar cells(DSSCs). Anatase structure $TiO_{2}$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_{2}$(5%) mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma(ICP) with $Ar/O_{2}$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSSCs, The $TiO_{2}$ Films made on these exhibited the BET specific surface area of 95, the pore volume of $0.3cm^{2}$ and the TEM particle size of ${\sim}25$ nm. The DSSCs made of this $TiO_{2}$ material exhibited an energy conversion efficiency of about 2.25% at $100mW/cm^{2}$ light intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.321-322
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• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.