• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1461-1462
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• 2011

In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for dye sensitized solar cell, ITiO thin films were deposited on Corning glass substrate by rf magnetron sputtering method. The effects of the discharge power and gas pressure on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, the effect of heat treatment and bias voltage on the morphological properties of ITiO thin film were also studied and discussed. The concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The electrical resistivity of $2{\times}10^{-4}{\Omega}{\cdot}cm$ and 90% of optical transmittance were obtained under the conditions of 5mTorr of gas pressure, 300W of discharge power, $300^{\circ}C$ of substrate temperature.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.43-50
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• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.51-56
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• 1996

Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.8-13
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• 1999

In this paper, an analytical threshold voltage model is proposed by replacing the conventional GCA(Gradual Channel Approximation) with the assumption that a normal depletion layer width in the intrinsic region will vary quasi-linearly according to the channel direction. Derived threshold voltage expression is written as a function of the effective channel length, drain voltage, substrate bias voltage, substrate doping concentration, and the oxide thickness. Calculated results show almost similar trends with BSIM3v3's results in a satisfactory accuracy.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.133-141
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• 1998

Stainless is widely used for various purposes due to its good corrosion resistance. There has been much research to produce the color stainless steel by several methods. In this experiment, TixN films have been deposited on the SUS304 substrate by the DC magnetron sputtering system and the color and texture of the films as a function of coating conditions has been studies. The TixN films showed a (111) preferred orintation in bias-free conditions. The texture of coated later was changed from (111) to (200) to (2200 with a change of the bias from -1000V to -3000V. When the bias is low, coated elements have low energy. Therefore, the texturct (111) of low surface energy. The mobility of atoms was increased with the increase of the blas and texture was changed to the other plane. Non-etched specimens all exhibited strong (111) texture. This result shows that (111) is a loose plane and of non-etched specimens all exhibited. High growing velocity of (111) of especially was main texture of Non-etched specimens. Low working pressure($4\times10^{-3}$torr) was more effective than figh working pressure ($6\times10^{-3}$torr) for the gold color of $Ti_xN$ film. L and b were increased and a was decreased with the increase of bias voltage. Accordingly, We obtained the near gold color of $Ti_xN$ film(L;92, a;1~1.5 b:24~29.50. As a result of reflectance. And as the bias increased, the reflectance was proportional to the increasing bias voltage, but we took the top reflectance when the bias voltage was -200V.