• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.365-370
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• 1996

Electrochromic $WO_3$ films were prepared by using an electron-beam deposition method. The dependence of the chemical stability of film on the substrate temperature was studied. From the experimental results, The optical property and chemical stability of as-deposited films strongly depended on the substrate temperature. The $WO_3$ film prepared at a substrate temperature of $80^{\circ}C$ was found to be the most stable when subjected to repeated coloring and bleaching cycles in an organic 0.6M $LiClO_4$ solution.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2729-2734
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• 2009

We report here the surface behavior of zirconium oxide deposited on Si(100) substrate depending on the different substrate temperatures. The zirconium oxide thin films were successfully deposited on the Si(100) surfaces applying radio-frequency (RF) magnetron sputtering process. The obtained zirconium oxide films were characterized by X-ray photoelectron spectroscopy (XPS) for study about the chemical environment of the elements, X-ray diffraction (XRD) for check the crystallinity of the films, spectroscopic ellipsometry (SE) technique for measuring the thickness of the films, and the morphology of the films were investigated by atomic force microscope (AFM). We found that the oxidation states of zirconium were changed from zirconium suboxides ($ZrO_{x,y}$, x,y < 2) (x; higher and y; lower oxidation state of zirconium) to zirconia ($ZrO_2$), and the surface was smoothed as the substrate temperature increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.38-38
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• 2010

Ever since the experimental discovery of graphene exfoiliated from the graphite flakes by Geim et at., this area has drawn a lot of attention for its possible application in IT industry. For the growth of graphene, chemical vapor deposition (CVD) has been widely used to fabricate the large area graphene. The lateral size of this graphene can be easily controlled by the size of the metal substrate though the chemical etching to remove this substrate is somewhat troublesome. Another problem which is hard to avoid is the folding at the grain boundary. We will discuss the origin of the folding first and introduce the way to avoid this folding. To solve this problem, we have used the various types of micro-thin metal foils. The precise control of hydro-carbon and the carrier gas results in the formation of the graphene on top of substrate. The thickness of graphene layers can be controlled with the control of gas flow on top of Cu substrate in contrast to the previously reported self-limiting growth $behavior^1$. Uniformity of this graphene layer has been checked by micro-raman spectroscopy and SEM. The size of grain can be enhanced by thermal treatment or use of other metal substrate. The dependence of grain size on the lattice size of the substrate will be discussed. By selecting the shape of substrate, we can grow various types of graphene. We will introduce the micron size graphene tube and its application.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.7
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• pp.839-845
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• 2007

Temperature dependence of kinetic constants in the anaerobic acidogenesis was investigated using anaerobic chemostat-type reactor. Glucose was used as a substrate in this experiment. Temperature ranging from 15 to $30^{\circ}C$ were studied. The saturation constant$(k_s\upsilon)$ and growth yield(Y) decreased with increasing temperature, while the maximum specific substrate utilization rate$(\upsilon_{max})$ increased. A temperature correction factor$(Q_{10})$ values of the substrate utilization rate and bacteria growth rate were the range from 1.3 to 2.2 and 1.5 to 2.2, respectively. The growth yield(Y) for the acidogenesis process was less sensitive to temperature changes than the maximum specific substrate utilization rate$(\upsilon_{max})$. The simulation model of the relationship between the substrate and sludge retention time(SRT) at the temperature range of 20 to $30^{\circ}C$ is obtained as the following ; $1/SRT={(6.53){\cdot}(1.038)^{T-20}{\cdot}(S/X)}/{(1.38){\cdot}(0.983)^{T-20}+(S/X)}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.208-208
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• 2009

We used Brewster's Law to examine the mechanism of liquid crystal (LC) alignment on an organic insulation layer when subjected to ion-beam irradiation. Brewster's Law implies that the maximum rate polarized ray on a slanted insulation layers on the substrate and it illustrates the dependence of polarization and themechanical structure on the ion beam irradiation process. The pretilt angle of nematic LCs on the organic insulation surface was about $1.13^{\circ}$ for an ion beam exposure of $45^{\circ}$ for 1 minute at 1800eV. This shows the dependence of LC alignment on the polarization ratio in a slanted organic insulation layer.

• Korean Journal of Biological Psychiatry
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• v.8 no.2
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• pp.239-245
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• 2001

Objective : Dopamine transporter is member of family of Na/Cl dependent neurotransmitter transporter, 12 transmembrane domain, that has high substrate specificity, affinity. It is related with dopamine reuptake in presynaptic vesicle. DAT has a VNTR in its 3'-untranslated region(UTR). 3'-UTR VNTR polymorphism is related with modification of dopamine transmission. The association between with VNTR polymorphism and neuropsychiatric disorders such as alcohol dependence, and low activity ALDH has been studied, but their relationship is unclear. We study about association of 3'-UTR VNTR of DAT gene and G2319A and alcohol dependence. Method : Group of Korean subjects were studied with alcohol dependence(n=49 male) compared to mentally healthy controls(n=53 male). The peripheral blood sample was acquired, and Polymerase Chain Reaction(PCR) amplification, MspI procedure was done. Result : There was a significant difference between alcohol dependence group and normal control(genotype frequency p<0.05, allele frequency p<0.05) Allele A frequency and genotype(GG, GA) frequency was a significant difference between alcohol dependence group and normal control(p<0.05). Conclusion : Our study showed that genetic polymorphism of DAT1 G2319A had relation with alcohol dependence.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.776-781
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• 2010

CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were $200^{\circ}C$, $0^{\circ}C$ and $-40^{\circ}C$. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to $0.5{\Omega}cm$ by lowering the substrate temperature to $-40^{\circ}C$. The CdSe/glass films prepared at $0^{\circ}C$ showed the highest photosensitivity among the films in this study.