• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Optical Society of Korea
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• v.17 no.3
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• pp.269-274
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• 2013

The effect of diffusing substrate and pillow lenses on the outcoupling efficiency of organic light-emitting diodes (OLEDs) was studied by optical simulation based on the point-dipole model. The diffusing substrate included Mie scatterers by which the condition of total internal reflection could be broken. The finite-difference time-domain method was used to obtain the intensity distribution on the transparent electrode of an OLED, which was used as a light source to carry out a ray-tracing simulation of the OLED and the diffusing substrate. It was found that the outcoupling efficiency of the OLED was sensitive to the thickness of organic layers and could be increased by 21.0% by adopting a diffusing substrate in which Mie scatterers whose radius was $2.0{\mu}m$ were included at the density of $10^7mm^{-3}$ and by 65.5% by forming one pillow lens with the radius of 2 mm on the front surface of the glass substrate. This study revealed that the outcoupling efficiency could be improved by adopting diffusing substrate and pillow lenses along with the optimization of the thickness of each layer in the OLED.

• BMB Reports
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• v.37 no.5
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• pp.533-537
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• 2004

Previously published kinetic data on the interactions of seventeen different enzymes with their physiological substrates are re-examined in order to understand the connection between ground state binding energy and transition state stabilization of the enzyme-catalyzed reactions. When the substrate ground state binding energies are normalized by the substrate molar volumes, binding of the substrate to the enzyme active site may be thought of as an energy concentration interaction; that is, binding of the substrate ground state brings in a certain concentration of energy. When kinetic data of the enzyme/substrate interactions are analyzed from this point of view, the following relationships are discovered: 1) smaller substrates possess more binding energy concentrations than do larger substrates with the effect dropping off exponentially, 2) larger enzymes (relative to substrate size) bind both the ground and transition states more tightly than smaller enzymes, and 3) high substrate ground state binding energy concentration is associated with greater reaction transition state stabilization. It is proposed that these observations are inconsistent with the conventional (Haldane) view of enzyme catalysis and are better reconciled with the shifting specificity model for enzyme catalysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.938-945
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• 2003

We fabricated Ni-substrate for YBCO coated conductors and evaluated the effects of pressing and annealing temperature and time on texture. Ni substrate was fabricated by powder metallurgy technique and compacts were prepared by applying uniaxial or isostatic pressure. The texture of substrate made by applying cold isostatic pressure (CIP) was stronger than that by uniaxial pressure which we attribute to the fact that the CIP method provided higher density and more uniform density distribution. It was observed that the substrate annealed at 400 C showed both retained texture and recrystallized texture. On the other hand, the texture of substrate significantly improved at annealing temperature above 500 C, forming strong 4-fold symmetry, [111] II ND texture, and FWHM of 9∼10 . It is to be noted that the degree of texture was almost independent of annealing temperature (500∼1000 C) and annealing time(1∼54 min, at 1000 C). EBSD and AFM analysis indicated that 99% of grain boundaries was low angle grain boundary and RMS was approximately 3 nm, respectively. Development of strong cube texture and high fraction of low angle grain boundary of Ni-substrate made by powder metallurgy technique in our study is considered to be suitable for the application of YBCO coated conductors.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.84-89
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• 2000

Friction welding of titanium and aluminium is numerically modeled by the axisymmetric thermal elastic-plastic analysis. In titanium/aluminium friction welding, heat transfers into the titanium substrate to a distance of z=10(mm) on the side of the bondline and into the whole region of the aluminium substrate having the large thermal conductivity. Adjacent to the bondline, $^{\sigma}r\;and\;^{\sigma\theta}$ are tensile in the substrate whose thermal shrinkage is large, and are compressive in the substrate whose thermal shrinkage is small. $\sigma_z$ along the radial direction is large tensile at the periphery of the component. Plastic strain occurs only close to the bondline in the aluminium substrate. In the components of plastic strain, $\varepsilon^p_r\;and\;\varepsilon^p_{\theta}$ have positive values and $\varepsilon^p_r$ has large negative value. However, $\varepsilon^p_r$ is produced not because of the severity of the mechanical restraint condition, but on purpose to satisfy the condition of the volume constant. A plastic work is proposed as a measure to evaluate the mechanical severity. The plastic work is larger in the aluminium substrate than that in the titanium substrate. The mechanical condition is severer in the aluminium substrate.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.6
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• pp.26-34
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• 2010

The mutual coupling of a pair of microstrip patch antennas on a finite grounded dielectric substrate is influenced by the diffracted field of surface waves from the edges of a substrate. The effective dielectric constant of a grounded dielectric substrate determines the distance between the antenna center and the edge of a substrate to obtain the minimum mutual coupling between a pair of microstrip patch antennas. The optimum substrate size with the minimum mutual coupling is easily calculated using the image method. The optimum substrate sizes using the linage method are in good agreement with the results obtained by the full wave simulation.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.5
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• pp.434-441
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• 2018

The pore size of nickel (Ni) bottom electrode layer (BEL) for low-temperature solid oxide fuel cells embedded with ultrathin-film electrolyte was controlled by changing the substrate surface morphology and deposition process parameters. For ~150-nm-thick Ni BEL, the upper side of an anodic aluminum oxide (AAO) substrate with ~65-nm-sized pores provided ~1.7 times smaller pore size than the lower side of the AAO substrate. For ~100-nm-thick Ni BEL, the AAO substrate with ~45-nm-sized pores provided ~2.6 times smaller pore size than the AAO substrate with ~95-nm-sized pores, and the deposition pressure of ~4 mTorr provided ~1.3 times smaller pore size than that of ~48 mTorr. On the AAO substrate with ~65-nm-sized pores, the Ni BEL deposited for 400 seconds had ~2 times smaller pore size than the Ni BEL deposited for 100 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.46-49
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• 1992

Cadmium sulfide thin films were deposited on glass substrate by Chemical Mist Deposition from solutions containing equimolar (0.1M) cadmium chloride and thiourea [(NH$_2$)$_2$CS] at a mist velocity of 1.6m/sec. Substrate temperatures were ranged between 200$^{\circ}C$ and 400$^{\circ}C$. The microstructure and semiconducting property of the films were investigated using SEM, X-ray diffraction, UV transmittance measurement and four point probe method. All the films have hexagonal structure and diffraction patterns indicate that the intensity of (112) and (101) reflections increase with increasing substrate temperature, whereas (002) reflection substrate temperature, whereas(002) reflection decrease for substrate temperatures between 250$^{\circ}C$ and 350$^{\circ}C$. The films prepared at lower temperature have a significant number of pinholes due probably to entrapped gaseous reaction. Optical transmittance of the films deposited at 350$^{\circ}C$ was about 75%. Optical bandgap of the films were 2.43eV regardless of substrate temperature. The dark resistivity of the films decreased with increasing substrate temperature up to 300$^{\circ}C$ and increased with further increasing substrate temperature. The films were photosensitive and had dark-to-light resistivity ratios of about 10 at room temperature for a white-light photoexcitation intensity of 50mw/$\textrm{cm}^2$.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• Asian-Australasian Journal of Animal Sciences
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• v.19 no.9
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• pp.1314-1321
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• 2006

The objective of this work was to study the effect of mixed culture solid substrate fermentation of C. tropicalis ZD-3 with A. niger ZD-8 on detoxification of cottonseed meal (CSM), and to investigate the effect of fermentation period, proportion of CSM in substrate, sodium carbonate, minerals and heat treatment on the reduction of free gossypol levels during mixed culture solid substrate fermentation of CSM. Experiment 1: Three groups of disinfected CSM substrate were incubated for 48 h after inoculation with either of the fungi C. tropicalis ZD-3, A. niger ZD-8 or mixed culture (C. tropicalis ZD-3 with A. niger ZD-8). One non-inoculated group was used as the control. Levels of initial and final free gossypol (FG), CP and in vitro CP digestibility were assayed. The results indicated that mixed culture fermentation was far more effective than single strain fermentation, which not only had higher detoxification rate, but also had higher CP content and in vitro digestibility. Experiment 2: CSM substrates were treated according to experimental variables including fermentation period, proportion of CSM in substrate, sodium carbonate, minerals and heat treatment, Then, the treated CSM substrates were inoculated with mixed culture (C. tropicalis ZD-3 with A. niger ZD-8) and incubated at $30^{\circ}C$ for 36 h in a 95% relative humidity chamber. After fermentation ended, FG and CP content of fermented CSM substrate was assayed. The results showed that the appropriate fermentation period was 36 h, and the optimal proportion of CSM in substrate was 70%. Addition of sodium carbonate to CSM substrate was beneficial for fermentative detoxification. Heat treatment could facilitate fermentative detoxification, and supplementation with minerals was instrumental in reducing gossypol levels during mixed culture solid substrate fermentation of CSM.