• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.12
• /
• pp.1056-1061
• /
• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.2
• /
• pp.60.4-60.4
• /
• 2019

Small bodies in the solar system are pristine leftovers of planetesimals since the formation epoch (~4.6 Gyr ago). After the formation, icy planetesimals have been preserved in the distant cold place beyond 30 au (i.e., Trans-Neptunian region) until recently without any catastrophic processes but have just been injected into inner region (<~5 au from the Sun) to be observed as comets. On the contrary, asteroids are rocky primitive objects (although some of them contains icy volatiles) distributing in the mainbelt between Mars and Jupiter orbits. Because of frequent encounters in the mainbelt, asteroids have experienced a number of repeated impacts until the present day. Namely, it is important to investigate thermal alternation process of cometary volatiles and refractories in the solar radiation field, whereas collisional and subsequence phenomena of asteroidal bodies. Although recent spacecraft observations revealed the physical natures on the surfaces of comets and asteroids, their interiors still remain largely unexplored. It is likely that a sudden brightening of a comet is associated with rapid sublimation of internal CO and CO2 or phase transition of amorphous H2O. An episodic dust ejection from an asteroid is causally related to an impact among asteroids, sudden sublimation of remaining subsurficial volatiles, etc. Because these transient phenomena provide rare opportunities to investigate their interiors, immediate observations using any optical instruments are particular important. In my presentation, I will review some examples of such transient phenomena in the solar system and propose possible collaborative research using the Korean Small Telescope Network.

• Sleep Medicine and Psychophysiology
• /
• v.20 no.2
• /
• pp.82-87
• /
• 2013

Objectives: Previous studies have reported an association between circadian preference and personality. Defense mechanism is unconscious ego process which deals with an individual's anxiety and is closely associated with one's personality. Our aim is to investigate the association between defense mechanism and circadian preference in medical students. Methods: One hundred forty eight medical students (70 males, 78 females), aged 22 to 30, answered the Beck Depression Inventory-II, Morningness-eveningness Questionnaire, and Korean version of Defense Style Questinnaire. Results: Consumption (beta=-0.262, p=0.001) and being a male (beta=0.175, p=0.031) were significant positive predictors of eveningness, while sublimation (beta=0.185, p=0.023) was a significant negative predictor of eveningness. Conclusion: Our study showed a relationship between specific defense mechanisms (i.e., consumption and sublimation) and eveningness in medical students, but it did not address whether the relationship is a causal one.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.3
• /
• pp.85-92
• /
• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.597-603
• /
• 2016

Tantalum carbide, which is one of the ultra-high temperature ceramics, was deposited on graphite by low pressure chemical vapor deposition from a $TaCl_5-C_3H_6-Ar-H_2$ mixture. To maintain a constant $TaCl_5/C_3H_6$ ratio during the deposition process, $TaCl_5$ powders were continuously fed into the sublimation chamber using a screw-driven feeder. Sublimation behavior of $TaCl_5$ powder was measured by thermogravimetric analysis. TaC coatings have various phases such as $Ta+{\alpha}-Ta_2C$, ${\alpha}-Ta_2C+TaC_{1-x}$, and $TaC_{1-x}$ depending on the powder feeding methods, the $C_3H_6/TaCl_5$ ratio, and the deposition temperatures. Near-stoichiometric TaC was obtained by optimizing the deposition parameters. Phase compositions were analyzed by XRD, XPS, and Raman analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.50-59
• /
• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.795-800
• /
• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Journal of Advanced Marine Engineering and Technology
• /
• v.25 no.6
• /
• pp.1341-1352
• /
• 2001

Vacuum freeze drying process by which frozen water in a drying material is removed sublimation under vacuum condition, is now applied to various industrial field such as the manufacturing and packaging of pharmaceuticals in pharmaceutical industry, the drying of bio- products in bio-technology industry, the treatment of various quality food stuff in food technology, and so on. The Knowledge about the heat and mass transfer characteristics related with the vacuum freeze drying process is crucial to improve the efficiency of the process as well as the quality of dried products. In spite of increasing needs for understanding of the process, the research efforts in this fields are still insufficient. In this paper, a numerical code that can predict primary drying in a vial is developed based on the finite volume method with a moving grid system. The calculation program can handle the axis- symmetric and multi-dimensional characteristics of heat and mass transfer of the vial freeze drying process. To demonstrated the usefulness of the present analysis, a practical freeze drying of skim Milk solution in a vial is simulated and various calculation results are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.10a
• /
• pp.59-63
• /
• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.750-753
• /
• 2002

The chemical vapor condensation process of Parylene-N thin films was investigated and applied to the passivation of the organic light emitting diodes (OLEDs). The effects of process variables on the deposition rate were studied, and it was found that the deposition rate of Parylene increases with increasing precursor sublimation temperature but decreases with increasing substrate temperature. The Parylene film was used as a passivation layer for OLEDs, and as a result, the lifetime of the passivated OLEDs was increased by a factor of about 2.3 compared with that of non-passivated OLEDs.