• Journal of Magnetics
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• 제8권4호
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• pp.129-132
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• 2003

We investigated the crystallographic and magnetic properties of double perovskite $Sr_2Fe_{l-x}Cr_{x}MoO_{6}$ (x=0.0, 0.01, 0.03, 0.05, and 0.10). Mossbauer spectra of the $Sr_2Fe_{l-x}Cr_{x}MoO_{6}$ have been taken at various temperatures ranging from 15 to 415 K. As the temperature increased towards $T_{c}$(415 K), the Mossbauer spectra showed line broadening and 1, 6 and 3, 4 line-width differences because of anisotropic hyperfine field fluctuation. The Mossbauer spectra indicated that an anisotropic field fluctuation of +H ( $P_{+}$=0.85) was greater than that of -H ($P_{-}$=0.15). We also calculated the field fluctuation frequency factors and the temperature dependence of anisotropy energies from its relaxation rate. We interpreted the effect of Cr ($t^3$$_{2g}$) doping as a decrease in the anisotropy energy.

• 한국환경농학회지
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• 제38권4호
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• pp.237-244
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• 2019

BACKGROUND: Impact of incorporating hairy vetch into soil on mitigating nitrous oxide (N₂O) emissions from maize field in South Korea has not been investigated, whereas impacts on soil properties and nutrients for crops have been investigated. Therefore, this study was conducted to examine N₂O emission from upland soil incorporated with hairy vetch for one year in maize field. METHODS AND RESULTS: Hairy vetch was grown in an upland soil from November, 2017 to May, 2018 and incorporated into soil on May 25 of 2018. Control and conventional treatment (NPK) were included for comparison. Gas samples were collected weekly for a year to examine N₂O emissions from the soil. Chemical nitrogen (N) fertilizer stimulated N₂O emission in short term resulting in the greatest cumulative N₂O emission in NPK (6.72 kg N₂O ha^-1) compared to the control (4.04 kg N₂O ha^-1) and hairy vetch-incorporated field (5.43 kg N₂O ha^-1), and the greatest yield of maize from NPK, because total N input was much greater by NPK (186 N kg ha^-1) than by hairy vetch (81.6 N kg ha^-1). CONCLUSION: Incorporation of hairy vetch reduced N₂O emissions from the maize compared to the NPK-treated field. However, further research on improving crop productivity with incorporation of hairy vetch is needed.

• 전기전자학회논문지
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• 제25권2호
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• pp.344-349
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• 2021

Super Junction구조는 항복전압과 온-상태 전압강하의 트레이드-오프 특성을 개선하고자 제안된 구조이다. 본 논문은 Super Junction IGBT P-Pillar 내부 영역에 Trench SiO₂를 성장시킨 구조를 제안한다. Super Junction구조에 인가되는 전계를 3D로 관찰 시 P-Pillar 내부에 전계가 인가되지 않는 영역을 확인하였다. Pillar영역의 부분저항은 각 Pillar의 크기와 항복전압에 의해 변동되는데 전계가 인가되지 않는 P-Pillar 내부 영역을 Trench 한 후 SiO₂를 성장시켜 P-Pillar의 크기를 감소시킨다. 4.5kV의 동일한 항복전압을 가질 때 온-상태 전압강하 특성이 Field Stop IGBT 대비 약 58%, 기존의 Super Junction IGBT 대비 19% 향상되는 것을 확인하였다.

• 한국세라믹학회지
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• 제43권7호
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• Journal of Magnetics
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• 제14권4호
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• pp.147-149
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• 2009

We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

• 대한수학회지
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• 제57권1호
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• pp.21-59
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• 2020

Let L_K denote the hypothetical automorphic Langlands group of a number field K. In our recent study, we briefly introduced a certain unconditional non-commutative topological group ${\mathfrak{W}}{\mathfrak{A}}{\frac{\varphi}{K}}$, called the Weil-Arthur idèle group of K, which, assuming the existence of L_K, comes equipped with a natural topological group homomorphism $NR{\frac{\varphi}{K}^{Langlands}}$ : ${\mathfrak{W}}{\mathfrak{A}}{\frac{\varphi}{K}}$ → L_K that we called the "Langlands form" of the global nonabelian norm-residue symbol of K. In this work, we present a detailed construction of ${\mathfrak{W}}{\mathfrak{A}}{\frac{\varphi}{K}}$ and $NR{\frac{\varphi}{K}^{Langlands}}$ : ${\mathfrak{W}}{\mathfrak{A}}{\frac{\varphi}{K}}$ → L_K, and discuss their basic properties.

• Journal of Information Display
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• 제7권1호
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• pp.30-34
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• 2006

A sub-field rearrangement driving method has been proposed to reduce a DFC (Dynamic False Contour) phenomenon in plasma display panels. The proposed driving method expresses 256 gray levels with 16 sub-fields, while conventional one uses only 8 sub-fields. Notwithstanding the increase in the number of sub-fields, the display time is similar to the conventional 8 sub-fields driving method by appropriate choosing selective writing and selective erasing for sub-fields.

• Journal of Ceramic Processing Research
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• 제21권6호
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• pp.725-730
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• 2020

This study investigated the structural and electrical properties of thin K(Ta_0.6Nb_0.4)O₃ films for their applicability to electrocaloric devices. Both of the sol-gel and spin coating methods were used to fabricate thin films. Those sintered at 650 ℃ showed a KTN phase with pyrochlore of K₂Ta₂O₆, but those sintered at 750 ℃ showed pure polycrystalline phase without a pyrochlore phase. The lattice constants observed were a= 3.990nm. The dielectric constant rapidly decreased due to decrease in polarization of space charge approximately at an applied frequency of 10 kHz. The dielectric constant and loss at 30 ℃ of the thin films sintered at 750 ℃ were 3,617 and 0.264. The dielectric constant of the specimen sintered at 750 ℃ decreased to about -8.27 %/V according to the applied DC field. The remanent polarization and coercive field at 36 ℃ of the specimen sintered at 750 ℃ were 20.0 µC/cm² and 122.6 kV/cm. When the electric field of 247 kV/cm was applied to the specimen sintered at 750 ℃, the highest electrocaloric property of 3.02 ℃ was obtained.

• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.