• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.178-184
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• 2010

The $12CaO{\cdot}7Al_2O_3$(C12A7) powders were successfully synthesized using combustion method with microwave-assistant and C12A7:H were fabricated by post-annealed process in Ar/H atmosphere. X-ray diffraction patterns and TGDSC were used for investigating to the precursors of crystalline and reaction depending on temperature. C12A7:H that was treated post-annealed process were investigated TG-MS and Hall-measurement for confirming H ions doping and checking electrical resistivity of C12A7:H. H ion substituted to $O^{2-}$ ions in the C12A7 cages were confirmed at $289.5^{\circ}C$ by TG-MS and C12A7:H calcined at $1000^{\circ}C$ in Ar/H=8:2 atmosphere for 8~10 h has low electrical resistivity about $10^2{\Omega}{\cdot}cm$ at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.83-87
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• 2023

Y₂SiO₅ Powder based on silicon and yttrium is well known as powder phosphors due to their excellent sustainability and efficiency. A new electroluminescence device was fabricated with Y₂SiO₅:Eu³⁺ powder phosphors though a simple screen printing method. The powder-dispersed electroluminescence device consisted of the Y₂SiO₅:Eu³⁺ powder-dispersed phosphor layer and BaTiO₃-dispersed dielectric layer. The annealing temperature of the phosphor for the best powder electroluminescence performance was optimized to high temperature in ambient atmosphere though a solid-state reaction. The Eu³⁺ concentration for the best device performance was also investigated and furthermore, the thermal dependence of the electroluminescence intensity was investigated at the operating voltage at 100℃, which is the Curie temperature of the BaTiO₃ layer. And the intensity was exponentially increased with voltage and increased linearly with frequency.

• Journal of Ceramic Processing Research
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• v.20 no.5
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• pp.484-489
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• 2019

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.955-960
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• 2012

We fabricated piezoelectric unimorph cantilever generators (UCG) using $Pb(Zr_{0.54}Ti_{0.46})O_3$ + 0.2 wt% $Cr_2O_3$ + 1.0 wt% $Nb_2O_5$ (PZCN) piezoelectric thick films, which were produced by a tape casting method. The PZCN thick films were tailored with same width and thickness but different lengths from 7.7 to 57.7 mm in order to evaluate optimized UCG for energy harvesting device applications. When the length of PZCN film was increased, the resonance frequency of UCG was slightly increased from 7 Hz to 8 Hz, which could be due to enlarged area of the highly stiff piezo-ceramic film. However, the output power was proportionally increased with the length of PZCT film and it reached 4.68 mW (1.221 $mW/cm^3$) when the film's length was 57.7 mm under 25 g of tip mass at 8 Hz, which is sufficient for micro-scale device applications.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.15-18
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• 2022

The ultraviolet-C emitting praseodymium doped yttrium phosphate (YPO₄:Pr³⁺) powder was synthesized by conventional solid-state reaction. The electroluminescence device was fabricated by simple screen-printing method using the synthesized YPO₄:Pr³⁺ powder, especially, polyvinylidene fluoride as an insulating layer was applied on the printed YPO₄:Pr³⁺ powder for stable performance of the electroluminescence. The electroluminescence properties were investigated under alternating current power system of 400 Hz. The device starts to emit at 350 V, which showed the ultraviolet-C emission peaking at the 233, 245, 264, 273 nm attributed to electronic transition of the Pr³⁺ ions. The electroluminescence intensity was increased as increasing the operating voltage and the device revealed stable performance up to 600 V due to the polyvinylidene fluoride serve as a protective layer.

• Progress in Superconductivity and Cryogenics
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• v.16 no.3
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• pp.4-6
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• 2014

Among Fe-based superconductors, potassium doped $BaFe_2As_2$ is favorable for applications because of its relatively high transition temperature and low anisotropy. To study the superconducting properties and the applicable aspects, high quality thin films of potassium doped $BaFe_2As_2$ should be fabricate. However, the high volatility of potassium makes it difficult to fabricate thin films of this compound. In this paper, we discuss the details of the experimental conditions used to fabricate $Ba_{1-x}K_xFe_2As_2$ films by ex situ PLD method. In the first set of samples, barium ratio in the target was controlled to make films with various potassium doping rate. However, in the second set of samples, the amount of potassium was controlled to find out optimal conditions for making high quality $Ba_{1-x}K_xFe_2As_2$ films.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.715-719
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• 2011

Nanopowders of $Fe_3N$ and Si were fabricated by high-energy ball milling. A dense nanostructured $12Fe-Si_3N_4$ composite was simultaneously synthesized and consolidated using a high-frequency induction-heated sintering method for 2 minutes or less from mechanically activated powders of $Fe_3N$ and Si. Highly dense $12Fe-Si_3N_4$ with a relative density of up to 99% was produced under simultaneous application of 80 MPa pressure and the induced current. The microstructure and mechanical properties of the composite were investigated.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.151-154
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• 2007

Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.320-326
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• 2006

Mullite whiskers were synthesized by a vapor-solid reaction with $Al(OH)_3-SiO_2-AlF_3$. The heat treatment temperature did not affect the shape of mullite whisker but the composition change resulted in different sizes. The first one was $30-50{\mu}m$ in size with the aspect ratio of 60 and above, and the second one was $600{\mu}m$ and below in size with the aspect ratio of 15 and below. The $Al_2O_3$ content in formed mullite whisker was 73.57-80.29 wt%, which is high $Al_2O_3$ content composition. The Young's modulus and the hardness measured by nano-indentation method were 136.7 GPa and 19.81 GPa, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.47-54
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• 2020

To develop the bright-vivid red- and yellow-inorganic fluorescent pigments with high luminescence properties, A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were synthesized by a water assisted solid state reaction (WASSR) method and a conventional solid state reaction method. Although impurity peaks corresponding to the AVO₃ and AV₃O₈ (A = K, Rb, and Cs) were observed in all samples prepared, the trigonal structure A₃V₅O₁₄ (A = K and Rb) and orthorhombic structure Cs₂V₄O₁₁ were successfully obtained as a main phase. These inorganic pigments showed the broad absorption band (under 550 nm) originated from CT transitions of VO₄ polyhedron, and the strong broad red- and green-emission bands due to ³T₂ → ¹A₁ and ³T₁ → ¹A₁ transitions of the [VO₄]^3- group. The A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ pigments showed a bright-vivid red- and yellow-body color, where the a* values of the A₃V₅O₁₄ (A = K and Rb) were +35.5 and +45.9, respectively, and b* value of Cs₂V₄O₁₁ pigments was +50.3. The L* values of the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were over +45. These results indicate that the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments could be an attractive candidate as a bright-vivid red- and yellow inorganic pigments.