• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.8
• /
• pp.474-478
• /
• 2017

We report on thin-film transistors based on $TiO_x$ pre-annealed by femtosecond laser pulses. A 30-nm thick $TiO_x$ active channel layer was initially deposited by an ALD system. The $TiO_x$ semiconducting films were annealed by irradiation with a femtosecond laser (power: $3W/cm^2$) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a $TiO_x$ film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the $TiO_x$ films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the $TiO_x$ surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with $TiO_x$ active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ${\sim}10^3$.

• ETRI Journal
• /
• v.43 no.5
• /
• pp.799-811
• /
• 2021

This paper considers a challenging problem: to simultaneously optimize the cost and the quality of service in opaque wavelength division multiplexing (WDM) networks. An optimization problem is proposed that takes the information including network topology, traffic between end nodes, and the target level of congestion at each link/ node in WDM networks. The outputs of this problem include routing, link channel capacities, and the optimum number of switch ports locally added/dropped at all switch nodes. The total network cost is reduced to maintain a minimum congestion level on all links, which provides an efficient trade-off solution for the network design problem. The optimal information is utilized for dynamic traffic in WDM networks, which is shown to achieve the desired performance with the guaranteed quality of service in different networks. It was found that for an average link blocking probability equal to 0.015, the proposed model achieves a net channel gain in terms of wavelength channels (𝛾_w) equal to 35.72 %, 39.09 %, and 36.93 % compared to shortest path first routing and 𝛾_w equal to 29.41 %, 37.35 %, and 27.47 % compared to alternate routing in three different networks.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.187-190
• /
• 1998

In this paper, a synchronization method of OFDM signals are introduced and its performance is estimated. A proposed method can perform a frame/symbol timing, carrier frequency synchronizations. Reference symbols consist of two duplicate OFDM symbols carrying signals on every sub-carriers. Performances of synchronization under 60GHz millimeter-wave indoor channels are evaluated, which were measured with frequency-sweeping method in common office buildings. A proposed method has improved performances owing to long averaging durations of synchronization metrics in frame/symbol timing, carrier frequency synchronization procedures.

• Proceedings of the IEEK Conference
• /
• 2002.06e
• /
• pp.243-246
• /
• 2002

This paper presents a study on the design and implementation of modulized I/O buffer control system for large capacity cable check. A 8bit I/O buffer basic module which has feedback loops with input and output buffers is simulated in PSpice and implemented with logic gates. This system is composed of 18 sub-boards which have 3 channels of 32bit data buses, and of a main board with MPC860 microprocessor.

• Journal of Communications and Networks
• /
• v.14 no.3
• /
• pp.252-256
• /
• 2012

We consider resource allocation in femto-cell networks to maximize the throughput while minimizing interference to macro-users nearby. This can be achieved by allocating spectrum resource in a cognitive radio way. The proposed resource allocation is performed in two steps; spectrum sensing and resource scheduling. The femto base station detects idle frequency assignments (FAs) free from the occupation by macro-users and then allocates sub-channels in an idle FA to femto-users, effectively managing the interference problem. Finally, the effectiveness of the proposed scheme is verified by computer simulations.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.198-202
• /
• 1988

In digital mobile communications received speech data are affected by burst errors as well as random errors. To overcome these errors we propose a bit-selective forward error correction scheme for the speech data which is sub-band coded at 13 kbps and transmitted over a 16 kbps channel. For a few error correcting codes the signal-to-noise ratio of error-corrected speech is obtained and compared through the simulation of mobile communication channels.

• Journal of electromagnetic engineering and science
• /
• v.12 no.3
• /
• pp.223-225
• /
• 2012

In this paper, we develop a symbol/frame time and carrier frequency synchronization scheme for multi-carrier signaling in wireless mobile channels. The proposed scheme achieves simultaneous time synchronization and carrier frequency offset estimation. Simulation results show that the frequency offset of multiple sub-carrier spacings can be estimated and that performance is improved with robustness regardless of the cyclic prefix length.

• Korean Journal of Radiology
• /
• v.2 no.3
• /
• pp.179-182
• /
• 2001

The authors present a case of giant serpentine aneurysm (a partially thrombosed aneurysm containing tortuous vascular channels with a separate entrance and outflow pathway). Giant serpentine aneurysms form a subgroup of giant intracranial aneurysms, distinct from saccular and fusiform varieties, and in this case, too, the clinical presentation and radiographic features of CT, MR imaging and angiography were distinct.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.55-55
• /
• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.1
• /
• pp.143-148
• /
• 2012

The photodissociation dynamics of cyclopropyl bromide ($C_3H_5Br$) and cyclobutyl bromide ($C_4H_7Br$) at 234 nm was investigated. A two-dimensional photofragment ion-imaging technique coupled with a [2+1] resonanceenhanced multiphoton ionization scheme was utilized to obtain speed and angular distributions of the nascent $Br(^2P_{3/2})$ and $Br^*(^2P_{1/2})$ atoms. The recoil anisotropies for the Br and $Br^*$ channels were measured to be ${\beta}_{Br}=0.92{\pm}0.03$ and ${\beta}_{Br^*}=1.52{\pm}0.04$ for $C_3H_5Br$ and ${\beta}_{Br}=1.10{\pm}0.03$ and ${\beta}_{Br^*}=1.49{\pm}0.05$ for $C_4H_7Br$. The relative quantum yield for Br was found to be ${\Phi}_{Br}=0.13{\pm}0.03$ and for $C_3H_5Br$ and $C_4H_7Br$, respectively. The soft radical limit of the impulsive model adequately modeled the related energy partitioning. The nonadiabatic transition probability from the 3A' and 4A' potential energy surfaces was estimated and discussed.