• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.472-477
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• 1987

In order to prevent the short-channel effects due to threshold voltage adjustment implantation in conventional n+ doped silicon gate process, a new approach involving automatic doping of polycide by boron during source and drain implantation is introduced. P-MOSFET devece fabricated by theis approach shows improved short channel characteristics than conventional device with n+ doped gate. Some concerns of adopting this approach in CMOS technology are addressed togetheer with some suggestions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.53-58
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• 1991

Hot-carrier induced degradation has been studied for the BF$_2$ ion-implanted surface-channel LDD(P$^{+}$ polysilicon gate) PMOSFET in comparison to the buried-channel structure(N$^{+}$ polysilicon gate) PMOSFET. The conditions for maximum degradation better correlated to I$_{g}$ than I$_{sub}$ for both PMOSFET's. Due to the use of LDD structure on SC-PMOSFET, the substrate current for SC-PMOSFET was shown to be smaller than that of BC-PMOSFET. The gate current was smaller as well, due to the gate material work-function difference between p$^{+}$ and n$^{+}$ polysilicon gates. From the results, it was shown that the surface-channel LDD PMOSFET is more resistant to short channel effect than the buried-channel PMOSFET.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.12
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• pp.1764-1770
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• 2013

Use of the 5.1 channel audio signals suitable for the television system is improper for the radio broadcasting system, which uses the stereo audio system. Therefore, it is necessary to develop an audio down-mixer to convert 5.1 multi-channel audio signals to stereo signals for radio broadcasting. In this paper, a development of an audio down-mixer was carried out to convert 5.1 multi-channel audio signals to stereo signals. The down-mixer which was developed can use the audio signals separated from video signals, including sound signals or individual signals provided from 3-channel AES/EBU signals including Left(L), Right(R), Left Surround(Ls), Right Surround(Rs), Center(C) and Low Frequency Effect(Lfe) sounds as mixer inputs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1189-1192
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• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.52-55
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• 2004

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current salutation. When electron velocity is saturated, deletion layer is stil open channel and it play a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1903-1905
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• 2013

• ETRI Journal
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• v.44 no.1
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• pp.117-124
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• 2022

In this paper, the performance of precoding-aided differential spatial modulation (PDSM) systems with optimal transmit antenna subset (TAS) selection is examined analytically. The average bit error rate (ABER) performance of the optimal TAS selection-based PDSM systems using a zero-forcing (ZF) precoder is evaluated using theoretical upper bound and Monte Carlo simulations. Simulation results validate the analysis and demonstrate a performance penalty < 2.6 dB compared with precoding-aided spatial modulation (PSM) with optimal TAS selection. The performance analysis reveals a transmit diversity gain of (N_T-N_R+1) for the ZF-based PDSM (ZF-PDSM) systems that employ TAS selection with N_T transmit antennas, N_S selected transmit antennas, and N_R receive antennas. It is also shown that reducing the number of activated transmit antennas via optimal TAS selection in the ZF-PDSM systems degrades ABER performance. In addition, the impacts of channel estimation errors on the performance of the ZF-PDSM system with TAS selection are evaluated, and the performance of this system is compared with that of ZF-based PSM with TAS selection.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.9
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• pp.1209-1218
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• 2001

The present paper proposes a new correlation for the flow boiling heat transfer coefficients in the low flow rate condition (Re(sub)LF$\leq$200) within horizontal rectangular channels with small gaps (heights). The gap between the upper and the lower plates of each channel ranges from 0.4 to 2mm while the channel width being fixed to 20mm. Refrigerant 113 was used as the test fluid. The mass flux ranges from 50 to 200kg/㎡s and the channel walls were uniformly heated with the heat flux range of 3-15kW/㎡. The quality range covers from 0.19 to 0.76 and the flow pattern is considered to be annular. The measured heat transfer coefficients increase with the mass flux and the local quality; however the effect of the heat flux appears to be minor. At the low mass flux condition, which is more likely with the smaller gap size, the heat transfer is primarily controlled by the liquid film thickness. The proposed F factor for the heat transfer coefficient in the range of Re(sub)LF$\leq$200 well represents the experimental data within the deviation of $\pm$20%. The Kandlikars flow boiling correlation covers the higher flow-rate range(Re(sub)LF>200) within the deviation of $\pm$20%.

• International Journal of Computer Science & Network Security
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• v.23 no.6
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• pp.27-34
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• 2023

This paper proposed an Inter-Carrier-Interference (ICI) Canceling Orthogonal Frequency Division Multiplexing (OFDM) receiver for 5G mobile system to support 500 km/h linear motor high speed terrestrial transportation service. A receiver in such high-speed train sees the transmission channel which is composed of multiple Doppler-shifted propagation paths. Then, a loss of sub-carrier orthogonality due to Doppler-spread channels causes ICI. The ICI Canceler is realized by the following three steps. First, using the Demodulation Reference Symbol (DMRS) pilot signals, it analyzes three parameters such as attenuation, relative delay, and Doppler-shift of each multi-path component. Secondly, based on the sets of three parameters, Channel Transfer Function (CTF) of sender sub-carrier number 𝒏 to receiver sub-carrier number 𝒍 is generated. In case of 𝒏≠𝒍, the CTF corresponds to ICI factor. Thirdly, since ICI factor is obtained, by applying ICI reverse operation by Multi-Tap Equalizer, ICI canceling can be realized. ICI canceling performance has been simulated assuming severe channel condition such as 500 km/h, 2 path reverse Doppler Shift for QPSK, 16QAM, 64QAM and 256QAM modulations. In particular, for modulation schemes below 16QAM, we confirmed that the difference between BER in a 2 path reverse Doppler shift environment and stationary environment at a moving speed of 500 km/h was very small when the number of taps in the multi-tap equalizer was set to 31 taps or more. We also confirmed that the BER performance in high-speed mobile communications for multi-level modulation schemes above 64QAM is dramatically improved by the use of a multi-tap equalizer.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.