• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2419-2431
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• 2023

Experiments related to Boron Neutron Capture Therapy (BNCT) accomplished at the Institute of Nuclear Techniques (INT), Budapest University of Technology and Economics (TUB) are presented. Relevant investigations are required before designing BNCT for vivo applications. Samples of relevant boron compounds (H₃BO₃, BDTPA) usually employed in BNCT were investigated with neutron beam. Channel #5 in the research reactor (100 kW) of INT-TUB provides the neutron beam. Boron samples are mounted on a carrier for neutron irradiation. The particle attenuation of several carrier materials was investigated, and the one with the lowest attenuation was selected. The effects of boron compound type, mass, and compound phase state were also investigated. To detect the emitted charged particles, a traditional ZnS(Ag) detector was employed. The neutron beam's interaction with the detector-detecting layer is investigated. Graphite (as a moderator) was employed to change the neutron beam's characteristics. The fast neutron beam was also thermalized by placing a portable fast neutron source in a paraffin container and irradiating the H₃BO₃. The obtained results suggest that the direct measurement approach appears to be insufficiently sensitive for determining the radiation dose committed by the Alpha particles from the ¹⁰B (n,α) reaction. As a result, a new approach must be used.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.5A
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• pp.401-407
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• 2009

The multi-band (MB) ultra-wideband (UWB) communication system divides its available frequency spectrum in 3.1 to 10.6GHz into 16 sub-bands, which leads to inherent disparities between carrier frequencies of each sub-band. For instance, the highest carrier frequency is 2.65 times higher than the lowest one. Since the propagation loss is proportional to the square of the transmission frequency, the propagation loss on the sub-band having the highest carrier frequency is approximately 7 times larger than that on the sub-band having the lowest carrier frequency, which results in disparities between received signal powers on each sub-band. In this paper, we propose a novel correlation scheme for frequency hopping (FH) MB UWB communications, where the correlation time is adaptively adjusted relative to the sub-band, which reduces the disparity between the received signal energies on each sub-band. Such compensation for lower received powers on sub-bands having higher carrier frequency leads to an improvement on the total average bit error rate (BER) of the entire FH MB UWB communication system. We analyze the performance of the proposed correlation scheme in Nakagami fading channels, and it is shown that the performance gain provided by the proposed correlator is more significant as the Nakagami fading index n increases (i.e., better channel conditions).

• Journal of the Korean Society for Marine Environment & Energy
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• v.18 no.1
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• pp.15-21
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• 2015

This paper presents the feasibility study on $CO_2$ carrier for carbon dioxide marine geological storage. Conceptual design was carried out to acquire $CO_2$ carriers by retrofitting existing vessels and new ship-building. Based on conceptual design, the acquisition cost of $CO_2$ carriers was estimated. Finally, necessary expense and number of ships were estimated based on operational plans for the assumed scenario.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.411-419
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• 2004

Titania particles are widely used as a photocatalyst to treat various contaminants in air and water. Titania particles were formed by vapor-phase oxidation of titanium tetraisopropoxide (TTIP) in a tube furnace between 773 and 1,273 K. The effect of process variables such as furnace temperature, flow rate of carrier air, and flow rate of sheath air on powder size and phase characteristics was investigated using a scanning mobility particle sizer (SMPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The size distribution of synthesized titania particles was characterized with mode diameter and peak concentration. The mode diameter ranging from 20 to 80 nm decreased with increasing flow rates of sheath air and carrier air, and increased with increasing furnace temperature. The peak concentration increased with increasing flow rates of sheath air and carrier air The best synthetic condition for high production rate can be derived from the experimental data set represented by mode diameter and peak concentration. The crystal structure of synthesized titania particles was found to be anatase phase, ensuring high photocatalytic potential.

• Journal of the Korean Applied Science and Technology
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• v.35 no.3
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• pp.757-767
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• 2018

In the propane dehydrogenation reaction proceeding at high temperature, the main cause of deactivation of the catalyst is coke deposition and sintering. In order to investigate the catalysts for reducing such inactivation, we have investigated the applicability of $MgAl_2O_4$ as a carrier for the catalytic dehydrogenation reaction. $MgAl_2O_4$ was prepared by Alcohthermal method at calcination temperature of 800, 900, $1000^{\circ}C$, and $Pt-Sn/MgAl_2O_4$ catalyst was prepared by supporting Pt and Sn by co-impregnation method. The reaction temperature was conducted at a high temperature of 650, $600^{\circ}C$ to confirm the thermal stability. As a result of the reaction experiment, it was confirmed that the conversion rate and yield of propane dehydrogenation reaction test were higher than that of the carrier-applied catalyst having a carrier calcination temperature of 900 and $1000^{\circ}C$, when the carrier-applied catalyst having a calcination temperature of $800^{\circ}C$ was used, It was found that the yield was higher than that of $Pt-Sn/{\theta}-Al_2O_3$ at $650^{\circ}C$. TGA, BET, XRD, CO-chemisorption, and SEM-EDS analyzes were performed for characterization. $MgAl_2O_4-800^{\circ}C$ was correlated with the relationship between good yield, Pt dispersion and low deactivation rate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.6
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• pp.512-519
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• 2013

In this paper, we propose a novel unambiguous correlation function for composite binary offset carrier (CBOC) signal tracking. First, we observe that a sub-carrier of CBOC signal is seen as a sum of four partial sub-carriers, and generate four partial-correlations composing the CBOC autocorrelation. Then, we obtain an unambiguous correlation function with a sharp main-peak by re-combining the partial correlations. From numerical results, we confirm that the proposed unambiguous correlation function offers a better tracking performance than the conventional correlation functions in terms of the tracking error standard deviation and multipath error envelope.

• Journal of information and communication convergence engineering
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• v.6 no.2
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• pp.192-197
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• 2008

High-speed harmonic optical modulation-demodulation schemes are presented and a possibility of the schemes for applying to high-speed light wave transmission system is tested at microwave frequency range. An example of this concept is as follows : Light wave is modulated succeedingly through cascaded optical modulators by a sub-carrier to produce a modulated light wave at harmonic frequency which is higher than the feasible frequency of the individual modulators. For demodulation of the base-band signal, the high frequency optical sub-carrier is down-converted by the same kind of optical modulator with the same concept of harmonic modulation.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Journal of IKEEE
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• v.28 no.1
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• pp.104-109
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• 2024

In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga₂O₃/SiC heterojunction diodes. We fabricated Ga₂O₃/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga₂O₃/SiC heterojunction diode. In the N₂ annealed devices, the highest on-state current was measured as 3.06 × 10^-2 A/cm^2, and an increase in carrier concentration of 3.8 × 10¹⁴ cm^-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.